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公开(公告)号：US12199134B2
公开(公告)日：2025-01-14
申请号：US17515338
申请日：2021-10-29
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Martin Behringer , Andreas Biebersdorf , Ruth Boss , Erwin Lang , Tobias Meyer , Alexander Pfeuffer , Marc Philippens , Julia Stolz , Tansen Varghese , Sebastian Wittmann , Siegfried Herrmann , Berthold Hahn , Bruno Jentzsch , Korbinian Perzlmaier , Peter Stauss , Petrus Sundgren , Jens Mueller , Kerstin Neveling , Frank Singer , Christian Mueller
Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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公开(公告)号：US20170264073A1
公开(公告)日：2017-09-14
申请号：US15509028
申请日：2015-08-27
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Sven Gerhard , Alfred Lell , Joachim Pfeiffer , Jens Mueller , Christoph Eichler , Thomas Veit , Thomas Adlhoch
CPC classification number: H01S5/0202 , H01S5/0203 , H01S5/22 , H01S5/2201
Abstract: A method of producing a laser chip includes providing a semiconductor wafer; creating a plurality of depressions arranged one behind another along a breaking direction on a top side of the semiconductor wafer, wherein 1) each depression includes a front boundary face and a rear boundary face successively in the breaking direction, 2) in at least one depression, the rear boundary face is inclined by an angle of 95° to 170° relative to the top side of the semiconductor wafer, 3) at least one depression includes a shoulder adjacent to the rear boundary face, and 4) the shoulder includes a shoulder face parallel to the top side of the semiconductor wafer and adjacent to the rear boundary face; and breaking the semiconductor wafer in the breaking direction at a breaking plane oriented perpendicularly to the top side of the semiconductor wafer and which runs through the depressions.
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公开(公告)号：US09281656B2
公开(公告)日：2016-03-08
申请号：US14416625
申请日：2013-06-03
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Jens Mueller , Adrian Stefan Avramescu
CPC classification number: H01S5/0425 , H01S5/2009 , H01S5/2018 , H01S5/22 , H01S5/2206 , H01S5/221 , H01S5/2222 , H01S5/2231 , H01S5/2232 , H01S5/34333 , H01S2301/166 , H01S2301/176
Abstract: In at least one embodiment, the bar laser (1) has a semiconductor layer sequence (2) with an active zone (20). A waveguide (3) with a defined width (B) is formed as an elevation from the semiconductor layer sequence (2). A contact metallization (4) is applied to an upper side (30) of the waveguide (3) facing away from the active zone (20). A current flow layer (5) is in direct contact with the contact metallization (4). The contact metallization (4) is electrically connected via the current flow layer (5). A current flow width (C) of the active zone (20) and/or the waveguide (3) is less than the width (B) of the waveguide (3).
Abstract translation: 在至少一个实施例中，条形激光器（1）具有带有活性区域（20）的半导体层序列（2）。 具有限定宽度（B）的波导（3）从半导体层序列（2）形成为仰角。 接触金属化（4）被施加到面向远离有效区（20）的波导（3）的上侧（30）。 电流流动层（5）与接触金属化（4）直接接触。 接触金属化（4）经由电流流动层（5）电连接。 有源区（20）和/或波导（3）的电流流动宽度（C）小于波导（3）的宽度（B）。
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公开(公告)号：US20220399314A1
公开(公告)日：2022-12-15
申请号：US17769407
申请日：2020-12-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Laura Kreiner , Jens Mueller
IPC: H01L25/075 , H01L33/00 , H01L21/66
Abstract: In an embodiment a method for producing a lighting device includes providing a wafer assemblage having a semiconductor layer sequence arranged on a carrier substrate, separating the wafer assemblage into a plurality of first optoelectronic semiconductor chips, each comprising a section of the semiconductor layer sequence and of the carrier substrate, transferring at least some of the first optoelectronic semiconductor chips to a first auxiliary carrier, wherein the first auxiliary carrier has contact pads on a main surface, wherein the contact pads are surrounded and delimited in each case by a contour, and wherein each of the first optoelectronic semiconductor chips is arranged on a contact pad, cutting, on the first auxiliary carrier, to size the first optoelectronic semiconductor chips in order to adapt the first optoelectronic semiconductor chips to a predefined shape such that the each first optoelectronic semiconductor chip lies completely within the contour of an assigned contact pad, and transferring the first optoelectronic semiconductor chips from the first auxiliary carrier to a carrier.
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公开(公告)号：US20160211646A1
公开(公告)日：2016-07-21
申请号：US14704532
申请日：2015-05-05
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Adrian Stefan Avramescu , Clemens Vierheilig , Christoph Eichler , Alfred Lell , Jens Mueller
CPC classification number: H01S5/0425 , H01L2224/4847 , H01L2224/73265 , H01L2924/12032 , H01S5/02276 , H01S5/02461 , H01S5/22 , H01S5/32341 , H01S2301/176 , H01L2924/00
Abstract: A semiconductor stripe laser has a first semiconductor region having a first conductivity type and a second semiconductor region having a different, second conductivity type. An active zone for generating laser radiation is located between the semiconductor regions. A stripe waveguide is formed in the second semiconductor region and is arranged to guide waves in a one-dimensional manner and is arranged for a current density of at least 0.5 kA/cm2. A second electrical contact is located on the second semiconductor region and on an electrical contact structure for external electrical contacting. An electrical passivation layer is provided in certain places on the stripe waveguide. A thermal insulation apparatus is located between the second electrical contact and the active zone and/or on the stripe waveguide.
Abstract translation: 半导体条纹激光器具有具有第一导电类型的第一半导体区域和具有不同的第二导电类型的第二半导体区域。 用于产生激光辐射的活性区域位于半导体区域之间。 条纹波导形成在第二半导体区域中，并且被布置成以一维方式引导波，并且布置成至少0.5kA / cm 2的电流密度。 第二电接触位于第二半导体区域上并且位于用于外部电接触的电接触结构上。 在条形波导上的某些位置提供电钝化层。 绝热装置位于第二电触点和有源区之间和/或条带波导上。
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Patent Agency Ranking
公开(公告)号：US20160204573A1
公开(公告)日：2016-07-14
申请号：US14912210
申请日：2014-08-14
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Jens Mueller , Markus Horn
Abstract: A laser component includes an edge-emitting first laser chip with an upper side, a lower side, an end side and a side surface, wherein an emission region is arranged on the end side, the side surface is oriented perpendicularly to the upper side and to the end side, a first metallization is arranged on the upper side, a step by which a part adjacent to the upper side of the side surface is set back, is formed on the side surface, a passivation layer is arranged in the set-back part of the side surface, the laser chip is arranged on a carrier, the side surface faces toward a surface of the carrier, and a first solder contact arranged on the surface of the carrier electrically conductively connects to the first metallization.
Abstract translation: 激光组件包括具有上侧，下侧，端侧和侧表面的边缘发射第一激光器芯片，其中发射区域设置在端侧，侧表面垂直于上侧定向， 在侧面上形成第一金属化层，在侧面上形成有与侧面上侧相邻的部分被退回的台阶，钝化层配置在上侧， 侧面的背面部分，激光芯片布置在载体上，侧表面朝向载体的表面，并且布置在载体表面上的第一焊料接触电导体连接到第一金属化。
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公开(公告)号：US12211826B2
公开(公告)日：2025-01-28
申请号：US17769407
申请日：2020-12-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Laura Kreiner , Jens Mueller
IPC: H01L25/075 , H01L21/66 , H01L33/00
Abstract: In an embodiment a method for producing a lighting device includes providing a wafer assemblage having a semiconductor layer sequence arranged on a carrier substrate, separating the wafer assemblage into a plurality of first optoelectronic semiconductor chips, each comprising a section of the semiconductor layer sequence and of the carrier substrate, transferring at least some of the first optoelectronic semiconductor chips to a first auxiliary carrier, wherein the first auxiliary carrier has contact pads on a main surface, wherein the contact pads are surrounded and delimited in each case by a contour, and wherein each of the first optoelectronic semiconductor chips is arranged on a contact pad, cutting, on the first auxiliary carrier, to size the first optoelectronic semiconductor chips in order to adapt the first optoelectronic semiconductor chips to a predefined shape such that the each first optoelectronic semiconductor chip lies completely within the contour of an assigned contact pad, and transferring the first optoelectronic semiconductor chips from the first auxiliary carrier to a carrier.
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公开(公告)号：US12057311B2
公开(公告)日：2024-08-06
申请号：US17430329
申请日：2020-02-12
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Jens Mueller , Adrian Stefan Avramescu
IPC: H01L21/02 , H01L21/308 , H01L21/768
CPC classification number: H01L21/02538 , H01L21/02639 , H01L21/3086 , H01L21/76811
Abstract: A method for manufacturing a semiconductor apparatus may include forming a patterned mask over a substrate, so that a first region of a first main surface of the substrate is covered by a plurality of spaced-apart sub-structural elements of a dielectric material, and second regions of the first main surface are not covered. Each of the plurality of sub-structural elements is arranged between adjacent second regions. The method also comprises carrying out a selective growth process of semiconductor material, so that the semiconductor material is grown over the second regions of the first main surface.
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公开(公告)号：US10686295B2
公开(公告)日：2020-06-16
申请号：US14912210
申请日：2014-08-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Jens Mueller , Markus Horn
Abstract: A laser component includes an edge-emitting first laser chip with an upper side, a lower side, an end side and a side surface, wherein an emission region is arranged on the end side, the side surface is oriented perpendicularly to the upper side and to the end side, a first metallization is arranged on the upper side, a step by which a part adjacent to the upper side of the side surface is set back, is formed on the side surface, a passivation layer is arranged in the set-back part of the side surface, the laser chip is arranged on a carrier, the side surface faces toward a surface of the carrier, and a first solder contact arranged on the surface of the carrier electrically conductively connects to the first metallization.
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公开(公告)号：US09972967B2
公开(公告)日：2018-05-15
申请号：US15509028
申请日：2015-08-27
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Sven Gerhard , Alfred Lell , Joachim Pfeiffer , Jens Mueller , Christoph Eichler , Thomas Veit , Thomas Adlhoch
CPC classification number: H01S5/0202 , H01S5/0203 , H01S5/22 , H01S5/2201
Abstract: A method of producing a laser chip includes providing a semiconductor wafer; creating a plurality of depressions arranged one behind another along a breaking direction on a top side of the semiconductor wafer, wherein 1) each depression includes a front boundary face and a rear boundary face successively in the breaking direction, 2) in at least one depression, the rear boundary face is inclined by an angle of 95° to 170° relative to the top side of the semiconductor wafer, 3) at least one depression includes a shoulder adjacent to the rear boundary face, and 4) the shoulder includes a shoulder face parallel to the top side of the semiconductor wafer and adjacent to the rear boundary face; and breaking the semiconductor wafer in the breaking direction at a breaking plane oriented perpendicularly to the top side of the semiconductor wafer and which runs through the depressions.
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