公开(公告)号：US20230047118A1

公开(公告)日：2023-02-16

申请号：US17793049

申请日：2021-01-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Matin MOHAJERANI ,  Zeynep Meric-Polster ,  Martin Behringer ,  Berthold Hahn

IPC: H01L33/62 ,  H01L27/15 ,  H01L33/40 ,  H01L33/48

Abstract: A radiation-emitting semiconductor chip may include a semiconductor layer sequence having a first semiconductor layer and a second semiconductor layer, a first metallic mirror with which charge carriers can be embedded into the first semiconductor layer, a first metallic contact layer disposed atop the first metallic mirror, and a second metallic contact layer disposed atop the first metallic contact layer. A first seed layer may be disposed between the first metallic contact layer and the first metallic mirror. A second seed layer may be disposed between the first metallic contact layer and the second metallic contact layer. The radiation-emitting semiconductor chip may include a radiation exit face having a multitude of emission regions. The first metallic mirror may have a multitude of cutouts that each define a lateral extent of one of the emission regions.

公开(公告)号：US12199134B2

公开(公告)日：2025-01-14

申请号：US17515338

申请日：2021-10-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Behringer ,  Andreas Biebersdorf ,  Ruth Boss ,  Erwin Lang ,  Tobias Meyer ,  Alexander Pfeuffer ,  Marc Philippens ,  Julia Stolz ,  Tansen Varghese ,  Sebastian Wittmann ,  Siegfried Herrmann ,  Berthold Hahn ,  Bruno Jentzsch ,  Korbinian Perzlmaier ,  Peter Stauss ,  Petrus Sundgren ,  Jens Mueller ,  Kerstin Neveling ,  Frank Singer ,  Christian Mueller

IPC: H01L27/15 ,  H01L33/10 ,  H01L33/58

Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

公开(公告)号：US12046696B2

公开(公告)日：2024-07-23

申请号：US17415003

申请日：2019-12-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Behringer ,  Alexander Tonkikh ,  Tansen Varghese

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/24 ,  B82Y20/00 ,  B82Y40/00 ,  H01L25/075

CPC classification number: H01L33/06 ,  H01L33/0093 ,  H01L33/0095 ,  H01L33/24 ,  B82Y20/00 ,  B82Y40/00 ,  H01L25/0753

Abstract: An optoelectronic semiconductor device comprises an active zone comprising sub-layers for forming a quantum well structure. Differences in energy levels of the quantum well structure are smaller in a central region of the optoelectronic semiconductor device than in an edge region of the optoelectronic semiconductor device. According to further embodiments, an optoelectronic semiconductor device comprises an active zone comprising a sub-layer which is suitable for forming a quantum well structure. In the active zone, quantum dot structures are formed in a central region of the optoelectronic semiconductor device. No quantum dot structures are formed in an edge region of the optoelectronic semiconductor device.