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公开(公告)号：US10910527B2
公开(公告)日：2021-02-02
申请号：US16349241
申请日：2017-12-06
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Philipp Pust
Abstract: An optoelectronic component is disclosed. In an embodiment, an optoelectronic component includes a semiconductor chip configured to emit primary radiation having a peak wavelength between 420 nm inclusive and 480 nm inclusive and a conversion element including a first converter material configured to partially convert the primary radiation into secondary radiation in a green range of the electromagnetic spectrum and a second converter material configured to partially convert the primary radiation into a secondary radiation in a red region of the electromagnetic spectrum, wherein the second converter material including a first red phosphor of the formula (K,Na)2(Si,Ti)F6:Mn4+ and a second red phosphor of the formula(M′)2-x′Eux′Si2Al2N6 where M′=Sr, Ca, Ba, and/or Mg and 0.001≤x′≤0.2, and wherein the optoelectronic device is configured to emit white total radiation.
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公开(公告)号：US20180358516A1
公开(公告)日：2018-12-13
申请号：US15776686
申请日：2016-11-17
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Philipp Pust , David Racz , Christopher Kölper
CPC classification number: H01L33/504 , H01L25/0756 , H01L33/08 , H01L33/502 , H01L33/505 , H01L33/507 , H01L33/54 , H01L33/56 , H01L33/60
Abstract: A semiconductor component has a semiconductor chip that generates an electromagnetic primary radiation having a first peak wavelength, having a first conversion element, which has a quantum structure, wherein the quantum structure is formed to partially shift the primary radiation to a secondary radiation having a second peak wavelength, wherein a second conversion element is provided which has a luminescent material, wherein the luminescent material is formed to shift an electromagnetic radiation to a tertiary radiation having a dominant wavelength, wherein the first conversion element is formed to generate secondary radiation, which has a lower peak wavelength than the dominant wavelength of the tertiary radiation.
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公开(公告)号：US20190280169A1
公开(公告)日：2019-09-12
申请号：US16349241
申请日：2017-12-06
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Philipp Pust
Abstract: An optoelectronic component is disclosed. In an embodiment, an optoelectronic component includes a semiconductor chip configured to emit primary radiation having a peak wavelength between 420 nm inclusive and 480 nm inclusive and a conversion element including a first converter material configured to partially convert the primary radiation into secondary radiation in a green range of the electromagnetic spectrum and a second converter material configured to partially convert the primary radiation into a secondary radiation in a red region of the electromagnetic spectrum, wherein the second converter material including a first red phosphor of the formula (K,Na)2(Si,Ti)F6:Mn4+ and a second red phosphor of the formula (M′)2-x′Eux′Si2Al2N6 where M′=Sr, Ca, Ba, and/or Mg and 0.001≤x′≤0.2, and wherein the optoelectronic device is configured to emit white total radiation.
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公开(公告)号：US10243115B2
公开(公告)日：2019-03-26
申请号：US15776686
申请日：2016-11-17
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Philipp Pust , David Racz , Christopher Kölper
Abstract: A semiconductor component has a semiconductor chip that generates an electromagnetic primary radiation having a first peak wavelength, having a first conversion element, which has a quantum structure, wherein the quantum structure is formed to partially shift the primary radiation to a secondary radiation having a second peak wavelength, wherein a second conversion element is provided which has a luminescent material, wherein the luminescent material is formed to shift an electromagnetic radiation to a tertiary radiation having a dominant wavelength, wherein the first conversion element is formed to generate secondary radiation, which has a lower peak wavelength than the dominant wavelength of the tertiary radiation.
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