公开(公告)号：US20220165924A1

公开(公告)日：2022-05-26

申请号：US17434148

申请日：2019-03-08

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Choo Kean Lim ,  Xiao Fen Hoo ,  Wan Leng Lim ,  Ai Cheng Chan

IPC: H01L33/60 ,  H01L21/683 ,  H01L25/075 ,  H01L33/50 ,  H01L33/54 ,  H01L33/58

Abstract: In an embodiment, a method for producing optoelectronic semiconductor devices includes applying a temporal spacer to protect a light-exit face of an optoelectronic semiconductor chip by applying a photoresist onto a first carrier, subsequently developing the photoresist in places thereby forming the temporal spacer and subsequently mounting the optoelectronic semiconductor chip onto a side of the temporal spacer facing away from the first carrier, forming a reflector in a lateral direction directly around the optoelectronic semiconductor chip and around the temporal spacer, subsequently removing the temporal spacer so that the reflector extends beyond the light-exit face and applying an optical element onto the reflector so that a gap exists between the light-exit face and a light-entrance face of the optical element.

公开(公告)号：US11990574B2

公开(公告)日：2024-05-21

申请号：US17434148

申请日：2019-03-08

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Choo Kean Lim ,  Xiao Fen Hoo ,  Wan Leng Lim ,  Ai Cheng Chan

IPC: H01L21/683 ,  H01L25/075 ,  H01L33/50 ,  H01L33/54 ,  H01L33/58 ,  H01L33/60

CPC classification number: H01L33/60 ,  H01L21/6835 ,  H01L25/0753 ,  H01L33/50 ,  H01L33/54 ,  H01L33/58 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2933/005 ,  H01L2933/0058

Abstract: In an embodiment, a method for producing optoelectronic semiconductor devices includes applying a temporal spacer to protect a light-exit face of an optoelectronic semiconductor chip by applying a photoresist onto a first carrier, subsequently developing the photoresist in places thereby forming the temporal spacer and subsequently mounting the optoelectronic semiconductor chip onto a side of the temporal spacer facing away from the first carrier, forming a reflector in a lateral direction directly around the optoelectronic semiconductor chip and around the temporal spacer, subsequently removing the temporal spacer so that the reflector extends beyond the light-exit face and applying an optical element onto the reflector so that a gap exists between the light-exit face and a light-entrance face of the optical element.