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公开(公告)号：US20220360039A1
公开(公告)日：2022-11-10
申请号：US17764912
申请日：2020-09-30
发明人： Ann Russell , Yochay Danziger , Jörg Erich Sorg , Hubert Halbritter , Alan Lenef
IPC分类号： H01S5/02255 , H01S5/023 , H01S5/40 , H01S5/02335 , H01S5/0234 , H01S5/02257
摘要： A laser package is described, the laser package comprising a plurality of laser diodes separately attached to at least one sub-mount having respective connecting pads, wherein, during operation, each of the laser diodes emits light having a fast axis and a slow axis defining a fast axis plane and a slow axis plane, wherein the fast axis planes of all laser diodes are parallel to each other and the distance between the fast axis planes of at least two laser diodes is smaller than the lateral distance between these laser diodes. Furthermore, a system with at least two laser packages is described.
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公开(公告)号：US20230092838A1
公开(公告)日：2023-03-23
申请号：US17482740
申请日：2021-09-23
发明人： Alan Lenef , Abdullah Gok , Jörg Erich Sorg
摘要： In at least one embodiment, the optoelectronic semiconductor device comprises a carrier, a first semiconductor laser configured to emit a first laser radiation and applied on the carrier, and a multi-mode waveguide configured to guide the first laser radiation and also applied on the carrier, wherein the multi-mode waveguide comprises at least one furcation and a plurality of branches connected by the at least one furcation.
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公开(公告)号：US11069841B2
公开(公告)日：2021-07-20
申请号：US16406950
申请日：2019-05-08
发明人： Thomas Dreeben , Zhengbo Yu , Alan Lenef
IPC分类号： H01L33/50
摘要： A multilayer ceramic converter with stratified scattering is disclosed. In an embodiment a ceramic wavelength converter assembly having a layered structure includes a phosphor layer, an upper barrier layer, and a lower barrier layer, wherein the phosphor layer is at least partially disposed between the upper barrier layer and the lower barrier layer.
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公开(公告)号：US20220295023A1
公开(公告)日：2022-09-15
申请号：US17200068
申请日：2021-03-12
发明人： Jörg Erich Sorg , Alan Lenef
IPC分类号： H04N9/31 , H01S5/02255
摘要： Provided is an optoelectronic light source that includes a plurality of semiconductor lasers each configured to emit a laser beam and arranged on a mounting platform, and a redirecting optical element configured to redirect the laser beams. The redirecting optical element includes for each one of the plurality of semiconductor lasers a separate reflection zone, the reflection zones are shaped differently from one another, and after passing the redirecting optical element, the laser beams run in a common plane.
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公开(公告)号：US10808893B2
公开(公告)日：2020-10-20
申请号：US16291679
申请日：2019-03-04
发明人： Alan Lenef , David Klotzkin , Xin Wen
IPC分类号： H01L33/46 , F21K9/68 , H01L33/60 , H01L33/50 , F21K9/64 , H01L33/48 , F21V7/26 , H01S5/022 , H01L27/146 , H01L27/32 , F21Y115/30 , F21Y115/10
摘要： An optoelectronic semiconductor light source includes a semiconductor chip configured to emit primary radiation, a Bragg mirror, and a luminescence conversion element configured to convert at least part of the primary radiation into secondary radiation having a longer wavelength, wherein the Bragg mirror is arranged between the semiconductor chip and the luminescence conversion element, the Bragg mirror is reflective for the secondary radiation and transmissive for the primary radiation, the Bragg mirror includes reflector layers of at least three different materials with different refractive indices, the Bragg mirror includes at least two different kinds of layer pairs, each kind of layer pairs being made up of reflective layers of two different materials, and the different kinds of layer pairs having different Brewster angles for p-polarized radiation.
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公开(公告)号：US11294195B2
公开(公告)日：2022-04-05
申请号：US16181284
申请日：2018-11-05
发明人： Luca Dal Negro , Alan Lenef , Madis Raukas , Sean Gorsky , Ran Zhang
摘要： Disclosed herein are a number of dielectric pillars, arranged to form a close-packed aperiodic array, such as a Vogel spiral, where the geometries of the aperiodic array produce azimuthally isotropic scattering of luminescence within a restricted angular cone of extraction. The aperiodic array can be formed, attached or placed on a converting material, such as, phosphor, to restrict emission to within the angular cone of extraction. The phosphor could be part of a converting illumination device, such as a phosphor coated light emitting diode, or a laser activated remote phosphor converting device.
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公开(公告)号：US10374137B2
公开(公告)日：2019-08-06
申请号：US15118075
申请日：2015-03-10
发明人： Maria Anc , Alan Lenef
IPC分类号： H01L33/50 , B32B3/02 , B32B3/10 , B32B3/24 , B32B7/027 , B32B7/04 , C04B35/115 , F21K9/64 , H01L33/64 , F21Y115/30 , F21V29/83 , B32B15/04 , B32B18/00 , B32B3/26 , B32B7/12 , B32B15/20
摘要： The present disclosure is directed to light converter assemblies with enhanced heat dissipation. A light converter assembly may comprise a confinement material applied to at least a first substrate and a phosphor material also deposited on the first substrate so as to be surrounded by the confinement material. The first substrate may be hermetically sealed to a second substrate using the confinement material so that the phosphor material is confined between the substrates and protected from atmospheric contamination. The substrates may comprise, for example, sapphire to allow for light beam transmission and heat conductance. Confinement materials that may be employed to seal the first substrate to the second substrate may include, for example, silicon or a metal (e.g., silver, copper, aluminum, etc.) The phosphor material may comprise, for example, at least one quantum dot material.
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公开(公告)号：US20230086879A1
公开(公告)日：2023-03-23
申请号：US17483514
申请日：2021-09-23
发明人： Darshan Kundaliya , Alan Lenef , Thomas Dreeben
IPC分类号： H01L33/58 , H01L33/50 , H01L33/60 , H01S5/02257
摘要： In an embodiment a semiconductor light source includes an optoelectronic semiconductor chip configured to emit radiation and a cover body arranged on the optoelectronic semiconductor chip, wherein the cover body comprises a light-transmissive base body, wherein the light-transmissive base body comprises a plurality of recesses with inclined side faces, the recesses start at an emission side of the light-transmissive base body remote from the optoelectronic semiconductor chip and narrow towards the optoelectronic semiconductor chip, wherein a mirror coating is provided at top regions of the recesses next to the emission side, and wherein bottom regions of the recesses closest to the optoelectronic semiconductor chip are free of the mirror coating.
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公开(公告)号：US11490058B2
公开(公告)日：2022-11-01
申请号：US17200068
申请日：2021-03-12
发明人： Jörg Erich Sorg , Alan Lenef
IPC分类号： G03B21/14 , H04N9/31 , H01S5/02255 , H01S5/00
摘要： Provided is an optoelectronic light source that includes a plurality of semiconductor lasers each configured to emit a laser beam and arranged on a mounting platform, and a redirecting optical element configured to redirect the laser beams. The redirecting optical element includes for each one of the plurality of semiconductor lasers a separate reflection zone, the reflection zones are shaped differently from one another, and after passing the redirecting optical element, the laser beams run in a common plane.
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公开(公告)号：US11226082B1
公开(公告)日：2022-01-18
申请号：US16992611
申请日：2020-08-13
发明人： Alan Lenef , David Klotzkin , Xin Wen
IPC分类号： F21V9/32 , H01S5/343 , F21Y115/30
摘要： An optoelectronic light source includes a semiconductor laser configured to produce polarized primary radiation, a converter material configured to absorb at least part of the primary radiation and convert the primary radiation into a secondary radiation of an increased wavelength, a planar multi-layered mirror located between the semiconductor laser and the converter material, the multi-layered mirror configured to transmit the primary radiation and reflect the secondary radiation, and an optical element provided between the semiconductor laser and the multi-layered mirror, wherein the optical element is configured such that the primary radiation coming from the semiconductor laser impinges on the multi-layered mirror at a Brewster angle.
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