公开(公告)号：US07622338B2

公开(公告)日：2009-11-24

申请号：US11206787

申请日：2005-08-19

申请人： Osamu Nakamura ,  Junko Sato

发明人： Osamu Nakamura ,  Junko Sato

IPC分类号： H01L21/00

CPC分类号： H01L29/66757 ,  H01L21/288 ,  H01L27/1288 ,  H01L27/1292 ,  H01L29/66765

摘要： The present invention provides a method for forming a semiconductor region having a desired shape, and also provides a method for manufacturing a semiconductor device with few variations. Moreover, the present invention provides a method for manufacturing a semiconductor device which can reduce the cost with a small number of materials and with high yield. According to the present invention, after a semiconductor film is partially oxidized to form an oxide layer, the semiconductor film is etched using the oxide layer as a mask to form a semiconductor region having a desired shape, and thereafter a semiconductor device using the semiconductor region is manufactured. Thus, a semiconductor region having a desired shape can be formed in a predetermined position without using a known photolithography step using a resist.

摘要翻译： 本发明提供了一种形成具有所需形状的半导体区域的方法，并且还提供了一种几乎没有变化的半导体器件的制造方法。 此外，本发明提供一种半导体器件的制造方法，其可以以少量的材料和高产率降低成本。 根据本发明，在将半导体膜部分氧化以形成氧化物层之后，使用氧化物层作为掩模蚀刻半导体膜，以形成具有所需形状的半导体区域，然后使用半导体区域 被制造。 因此，可以在预定位置形成具有期望形状的半导体区域，而不使用已知的使用抗蚀剂的光刻步骤。

公开(公告)号：US07371598B2

公开(公告)日：2008-05-13

申请号：US10952754

申请日：2004-09-30

申请人： Osamu Nakamura ,  Junko Sato

发明人： Osamu Nakamura ,  Junko Sato

IPC分类号： H01L21/00

CPC分类号： H01L29/66765 ,  H01L21/4867 ,  H01L23/498 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/66757 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/3011 ,  H01L2924/00

摘要： The invention includes a first step for forming a first conductive layer composed of a high melting point metal to be in contact with an insulating layer; and a second step for forming a second conductive layer by discharging a composition containing a conductive material so as to be in contact with the first conductive layer. The first conductive layer is formed prior to forming the second conductive layer by droplet discharging, and hence, adhesiveness and peel resistance of the second conductive layer are improved. Furthermore, the insulating layer is covered with the first conductive layer, thereby preventing damage or destruction of the insulating layer.

摘要翻译： 本发明包括用于形成与绝缘层接触的由高熔点金属组成的第一导电层的第一步骤; 以及通过排出含有导电材料的组合物以与第一导电层接触来形成第二导电层的第二步骤。 在通过液滴喷射形成第二导电层之前形成第一导电层，因此提高了第二导电层的粘合性和抗剥离性。 此外，绝缘层被第一导电层覆盖，从而防止绝缘层的损坏或破坏。

公开(公告)号：US07795730B2

公开(公告)日：2010-09-14

申请号：US11934528

申请日：2007-11-02

申请人： Osamu Nakamura ,  Junko Sato

发明人： Osamu Nakamura ,  Junko Sato

IPC分类号： H01L23/48

CPC分类号： H01L29/66765 ,  H01L21/4867 ,  H01L23/498 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/66757 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/3011 ,  H01L2924/00

摘要： The invention includes a first step for forming a first conductive layer composed of a high melting point metal to be in contact with an insulating layer; and a second step for forming a second conductive layer by discharging a composition containing a conductive material so as to be in contact with the first conductive layer. The first conductive layer is formed prior to forming the second conductive layer by droplet discharging, and hence, adhesiveness and peel resistance of the second conductive layer are improved. Furthermore, the insulating layer is covered with the first conductive layer, thereby preventing damage or destruction of the insulating layer.

摘要翻译： 本发明包括用于形成与绝缘层接触的由高熔点金属组成的第一导电层的第一步骤; 以及通过排出含有导电材料的组合物以与第一导电层接触来形成第二导电层的第二步骤。 在通过液滴喷射形成第二导电层之前形成第一导电层，因此提高了第二导电层的粘合性和抗剥离性。 此外，绝缘层被第一导电层覆盖，从而防止绝缘层的损坏或破坏。

公开(公告)号：US20060046476A1

公开(公告)日：2006-03-02

申请号：US11206787

申请日：2005-08-19

申请人： Osamu Nakamura ,  Junko Sato

发明人： Osamu Nakamura ,  Junko Sato

IPC分类号： H01L21/44 ,  H01L21/31 ,  H01L21/3205 ,  H01L21/8234 ,  H01L21/84

CPC分类号： H01L29/66757 ,  H01L21/288 ,  H01L27/1288 ,  H01L27/1292 ,  H01L29/66765

摘要： The present invention provides a method for forming a semiconductor region having a desired shape, and also provides a method for manufacturing a semiconductor device with few variations. Moreover, the present invention provides a method for manufacturing a semiconductor device which can reduce the cost with a small number of materials and with high yield. According to the present invention, after a semiconductor film is partially oxidized to form an oxide layer, the semiconductor film is etched using the oxide layer as a mask to form a semiconductor region having a desired shape, and thereafter a semiconductor device using the semiconductor region is manufactured. Thus, a semiconductor region having a desired shape can be formed in a predetermined position without using a known photolithography step using a resist.

公开(公告)号：US07977253B2

公开(公告)日：2011-07-12

申请号：US11206788

申请日：2005-08-19

申请人： Osamu Nakamura ,  Hiroko Yamamoto ,  Junko Sato

发明人： Osamu Nakamura ,  Hiroko Yamamoto ,  Junko Sato

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/32105 ,  B23K26/0661 ,  H01L21/268 ,  H01L21/32139 ,  H01L27/12 ,  H01L27/1288 ,  H01L27/1292 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78633

摘要： A method for forming a semiconductor layer having a fine shape is provided. A method for manufacturing a semiconductor device with few variations is provided. In addition, a method for manufacturing a semiconductor device with a high yield is provided where the cost can be reduced with few materials. According to the invention, a semiconductor film is partially irradiated with a laser beam to form an insulating layer, and the semiconductor film is etched using the insulating film as a mask so as to form a semiconductor layer having a desired shape. Then, the semiconductor layer is used to manufacture a semiconductor device. According to the invention, a semiconductor layer having a fine shape can be formed in a predetermined position without using a known photolithography step using a resist.

摘要翻译： 提供一种形成具有微细形状的半导体层的方法。 提供了一种制造具有很少变化的半导体器件的方法。 此外，提供了一种用于制造具有高产率的半导体器件的方法，其中可以以少量材料来降低成本。 根据本发明，半导体膜部分地用激光束照射以形成绝缘层，并且使用绝缘膜作为掩模蚀刻半导体膜，以形成具有期望形状的半导体层。 然后，半导体层用于制造半导体器件。 根据本发明，可以在预定位置上形成具有微细形状的半导体层，而不使用已知的使用抗蚀剂的光刻步骤。

公开(公告)号：US20060046512A1

公开(公告)日：2006-03-02

申请号：US11206788

申请日：2005-08-19

申请人： Osamu Nakamura ,  Hiroko Yamamoto ,  Junko Sato

发明人： Osamu Nakamura ,  Hiroko Yamamoto ,  Junko Sato

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/32105 ,  B23K26/0661 ,  H01L21/268 ,  H01L21/32139 ,  H01L27/12 ,  H01L27/1288 ,  H01L27/1292 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78633

摘要： A method for forming a semiconductor layer having a fine shape is provided. A method for manufacturing a semiconductor device with few variations is provided. In addition, a method for manufacturing a semiconductor device with a high yield is provided where the cost can be reduced with few materials. According to the invention, a semiconductor film is partially irradiated with a laser beam to form an insulating layer, and the semiconductor film is etched using the insulating film as a mask so as to form a semiconductor layer having a desired shape. Then, the semiconductor layer is used to manufacture a semiconductor device. According to the invention, a semiconductor layer having a fine shape can be formed in a predetermined position without using a known photolithography step using a resist.

摘要翻译： 提供一种形成具有微细形状的半导体层的方法。 提供了一种制造具有很少变化的半导体器件的方法。 此外，提供了一种用于制造具有高产率的半导体器件的方法，其中可以以少量材料来降低成本。 根据本发明，半导体膜部分地用激光束照射以形成绝缘层，并且使用绝缘膜作为掩模蚀刻半导体膜，以形成具有期望形状的半导体层。 然后，半导体层用于制造半导体器件。 根据本发明，可以在预定位置上形成具有微细形状的半导体层，而不使用已知的使用抗蚀剂的光刻步骤。

公开(公告)号：US20050072974A1

公开(公告)日：2005-04-07

申请号：US10952754

申请日：2004-09-30

申请人： Osamu Nakamura ,  Junko Sato

发明人： Osamu Nakamura ,  Junko Sato

IPC分类号： H01L21/28 ,  G02F1/136 ,  H01L21/336 ,  H01L21/48 ,  H01L21/77 ,  H01L21/84 ,  H01L23/498 ,  H01L27/12 ,  H01L29/786 ,  H01L29/10

CPC分类号： H01L29/66765 ,  H01L21/4867 ,  H01L23/498 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/66757 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/3011 ,  H01L2924/00

摘要： The invention includes a first step for forming a first conductive layer composed of a high melting point metal to be in contact with an insulating layer; and a second step for forming a second conductive layer by discharging a composition containing a conductive material so as to be in contact with the first conductive layer. The first conductive layer is formed prior to forming the second conductive layer by droplet discharging, and hence, adhesiveness and peel resistance of the second conductive layer are improved. Furthermore, the insulating layer is covered with the first conductive layer, thereby preventing damage or destruction of the insulating layer.

摘要翻译： 本发明包括用于形成与绝缘层接触的由高熔点金属组成的第一导电层的第一步骤; 以及通过排出含有导电材料的组合物以与第一导电层接触来形成第二导电层的第二步骤。 在通过液滴喷射形成第二导电层之前形成第一导电层，因此提高了第二导电层的粘合性和抗剥离性。 此外，绝缘层被第一导电层覆盖，从而防止绝缘层的损坏或破坏。

公开(公告)号：US08097746B2

公开(公告)日：2012-01-17

申请号：US11910860

申请日：2006-03-29

申请人： Katsuji Ujita ,  Junko Sato ,  Takashi Fukumoto

发明人： Katsuji Ujita ,  Junko Sato ,  Takashi Fukumoto

IPC分类号： C07C309/67 ,  C07C67/00

CPC分类号： C07C309/66 ,  C07C67/10 ,  C07C303/28 ,  C07C69/533 ,  C07C309/73

摘要： The present invention provides a method of producing 2-isopropenyl-5-methyl-4-hexen-1-yl 3-methyl-2-butenoate industrially advantageously in a high yield. More particularly, the present invention provides a method of producing 2-isopropenyl-5-methyl-4-hexen-1-yl 3-methyl-2-butenoate represented by the following formula (IV): which comprises reacting 2-isopropenyl-5-methyl-4-hexen-1-ol with an organic sulfonyl halide in the presence of a basic substance to give a sulfonate compound represented by the following formula (III): wherein R is a hydrocarbon group, and reacting the obtained sulfonate compound with senecionic acid in the presence of a basic substance.

摘要翻译： 本发明提供了在工业上有利地以高产率生产2-异丙烯基-5-甲基-4-己烯-1-基3-甲基-2-丁烯酸2-乙烯酯的方法。 更具体地说，本发明提供一种由下式（Ⅳ）表示的2-异丙烯基-5-甲基-4-己烯-1-基3-甲基-2-丁烯酸2-乙烯酯的制备方法：其包括使2-异丙烯基-5 - 甲基-4-己烯-1-醇与有机磺酰卤在碱性物质的存在下反应，得到下式（III）表示的磺酸盐化合物：其中R是烃基，并使得到的磺酸盐化合物与 在一种碱性物质的存在下的硫氰酸。

公开(公告)号：US08035857B2

公开(公告)日：2011-10-11

申请号：US12878192

申请日：2010-09-09

申请人： Junko Sato

发明人： Junko Sato

IPC分类号： H04N1/60 ,  G06K9/36 ,  G06K9/60

CPC分类号： G06F3/1285 ,  G06F3/1208 ,  G06F3/122 ,  G06F3/125 ,  G06F3/1284

摘要： Bleed widths are set for finishing pages. Bleed regions including the finishing pages are determined based on the set bleed widths for the finishing pages, and the size of the finishing page. The allocation of manuscript data is determined to align the center of the manuscript data to be allocated to that of each determined bleed region.

摘要翻译： 出纸宽度设置为整理页面。 基于整理页面的设定的出血宽度和整理页面的大小来确定包括整理页面的出血区域。 确定原稿数据的分配以使要分配的原稿数据的中心与每个确定的出血区域的中心对齐。

公开(公告)号：US20110117497A1

公开(公告)日：2011-05-19

申请号：US13001738

申请日：2009-06-30

申请人： Junko Sato ,  Osamu Nakayama ,  Takashi Fukumoto

发明人： Junko Sato ,  Osamu Nakayama ,  Takashi Fukumoto

IPC分类号： G03F7/004 ,  C07D411/14 ,  C07D327/04 ,  C08F28/06

CPC分类号： C07D327/04 ,  C07D497/18 ,  C08F220/38 ,  G03F7/0045 ,  G03F7/0397 ,  G03F7/085

摘要： An acrylate derivative represented by the following general formula (1): (in the formula, R1 represents a hydrogen atom, a methyl group or a trifluoromethyl group; each of R2, R3, R5, R7, R8, R9 and R10 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group or an alkoxy group; each of R4 and R6 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group or an alkoxy group, or R4 and R6 are bonded to each other to represent an alkylene group, —O— or —S—; n represents 0, 1 or 2; and W represents an alkylene group or a cycloalkylene group); an intermediate thereof; a method for producing the same; a polymer compound which is obtainable from polymerization of a raw material containing the foregoing acrylate derivative and which is excellent in solubility in an organic solvent used for the preparation of a photoresist composition; and a photoresist composition containing the polymer compound, an organic solvent and a photo acid generator and having excellent adhesion to substrate and less pattern collapse, are provided.

摘要翻译： 由以下通式（1）表示的丙烯酸酯衍生物：（式中，R1表示氢原子，甲基或三氟甲基; R2，R3，R5，R7，R8，R9和R10各自独立地表示 氢原子，烷基，环烷基或烷氧基; R 4和R 6各自独立地表示氢原子，烷基，环烷基或烷氧基，或者R 4和R 6相互键合，表示 亚烷基，-O-或-S-; n表示0,1或2; W表示亚烷基或亚环烷基）。 其中间体; 其制造方法; 可从含有上述丙烯酸酯衍生物的原料的聚合得到的聚合物化合物，其在用于制备光致抗蚀剂组合物的有机溶剂中的溶解性优异; 并且提供了含有高分子化合物，有机溶剂和光酸产生剂并且对基材具有优异粘附性和较少图案折叠的光致抗蚀剂组合物。