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    METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
    9.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE 有权
    制造半导体存储器件的方法

    公开(公告)号：US20100144133A1

    公开(公告)日：2010-06-10

    申请号：US12608903

    申请日：2009-10-29

    申请人： Kayo NOMURA ,  Hideto Matsuyama

    发明人： Kayo NOMURA ,  Hideto Matsuyama

    IPC分类号： H01L21/8239

    CPC分类号： H01L27/11578 ,  H01L27/11575 ,  H01L27/11582

    摘要： A method for manufacturing a semiconductor memory device, includes: forming a stacked unit above a semiconductor substrate, the stacked unit including a plurality of insulating layers alternately stacked with a plurality of electrode layers, the electrode layers being formed of a semiconductor; making a hole in the stacked unit to pass through the electrode layers and the insulating layers; forming an insulating film on a side wall of the hole, the insulating film including a charge storage layer; forming a semiconductor layer in an interior of the hole to align in a stacking direction of the electrode layers and the insulating layers to form a memory string by multiply connecting memory cells in the stacking direction, the memory cell including the electrode layer, the charge storage layer opposing the electrode layer, and the semiconductor layer opposing the charge storage layer; making a trench in a portion of the stacked unit proximal to the memory string to pass through the electrode layers and the insulating layers; forming a metal film on a side wall of the trench; forming a cap film to cover the metal film and fill into the trench; performing heat treatment in the state where the cap film is filled into the trench to cause the metal film to react with the semiconductor of the electrode layers and form a compound between the semiconductor and the metal film at portions of the electrode layers contacting the metal film; removing the cap film and an unreacted excess portion of the metal film; and providing a dielectric substance in the trench after the cap film and the unreacted excess portion are removed.

    摘要翻译： 一种制造半导体存储器件的方法，包括：在半导体衬底上形成层叠单元，所述层叠单元包括交替层叠有多个电极层的多个绝缘层，所述电极层由半导体形成; 在堆叠单元中形成孔以穿过电极层和绝缘层; 在所述孔的侧壁上形成绝缘膜，所述绝缘膜包括电荷存储层; 在所述孔的内部形成半导体层，以在所述电极层和所述绝缘层的堆叠方向上排列，以通过沿堆叠方向乘以连接存储单元形成存储串，所述存储单元包括所述电极层，所述电荷存储 与电极层相对的层，以及与电荷存储层相对的半导体层。 在靠近存储器串的层叠单元的一部分中形成沟槽，以穿过电极层和绝缘层; 在沟槽的侧壁上形成金属膜; 形成盖膜以覆盖金属膜并填充到沟槽中; 在将盖膜填充到沟槽中的状态下进行热处理，使得金属膜与电极层的半导体反应，并且在与金属膜接触的电极层的部分处形成半导体与金属膜之间的化合物 ; 去除所述盖膜和所述金属膜的未反应的多余部分; 并且在除去盖膜和未反应的过量部分之后在沟槽中提供电介质。