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公开(公告)号：US07018683B2
公开(公告)日：2006-03-28
申请号：US10867865
申请日：2004-06-15
申请人： Osamu Takaoka , Ryoji Hagiwara
发明人： Osamu Takaoka , Ryoji Hagiwara
IPC分类号： C23C16/00
CPC分类号： C23C16/486 , C23C16/52
摘要： A microscopic projection or a characteristic pattern are formed in the vicinity of a region to be processed before processing using electron beam CVD, during processing an image of a region containing the projection or pattern formed by electron beam CVD is captured to obtain a current position of the projection or pattern, a difference between the position before staring and the current position is treated as a drift amount and processing is restarted at a region that has been subjected to microscopic adjustment of the electron irradiation region.
摘要翻译： 在使用电子束CVD处理之前，在要处理的区域附近形成微观投影或特征图案，在处理期间，捕获包含通过电子束CVD形成的突起或图案的区域的图像，以获得当前位置 将投影或图案之间的位置之间的差异与当前位置之间的差值作为漂移量进行处理，并且在经过电子照射区域的微观调整的区域重新开始处理。
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2.发明申请Photomask defect correction method employing a combined device of a focused electron beam device and an atomic force microscope 有权采用聚焦电子束装置和原子力显微镜的组合装置的光掩模缺陷校正方法公开(公告)号：US20050285033A1
公开(公告)日：2005-12-29
申请号：US11137843
申请日：2005-05-25
申请人： Osamu Takaoka , Ryoji Hagiwara
发明人： Osamu Takaoka , Ryoji Hagiwara
摘要： In order to make it possible to improve throughput of AFM scratch processing, enable correction of small defects in clear defect correction with a high degree of precision, and enable correction in a shorter period of time in the event of overcutting by AFM scratch processing, throughput of AFM scratch processing is increased by maximizing high-resolution of the electron beam device and minimizing the time taken in observations using a device incorporating both an electro-optical system and an AFM head in a vacuum, correcting small clear defects with high precision by eliminating portions left over from AFM scratch processing after applying a clear defect correction film using an electron beam while providing light-blocking film raw material, and correction in a short time is made possible by eliminating portions remaining using AFM scratch processing after applying a clear defect correction film using an electron beam while providing light-blocking film raw material also in cases of overcutting in AFM scratch processing.
摘要翻译： 为了提高AFM划痕处理的生产能力，能够以高精度校正清晰的缺陷校正中的小缺陷，并且能够在AFM划痕处理过度切割的情况下在更短的时间内进行修正 通过最大限度地提高电子束装置的高分辨率和最小化在使用在真空中并入电光系统和AFM头的装置的观察所花费的时间来增加AFM划痕处理，通过消除以高精度校正小的清晰缺陷 在使用电子束施加清晰的缺陷校正膜同时提供遮光膜原料之后，从AFM划痕处理剩余的部分，并且通过在施加清晰的缺陷校正之后通过消除使用AFM划痕处理剩余的部分在短时间内进行校正成为可能 同时在o的情况下也提供遮光膜原料的电子束 在AFM划痕处理中强化。
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公开(公告)号：US07927769B2
公开(公告)日：2011-04-19
申请号：US12380872
申请日：2009-03-03
申请人： Ryoji Hagiwara , Osamu Takaoka , Tomokazu Kozakai
发明人： Ryoji Hagiwara , Osamu Takaoka , Tomokazu Kozakai
IPC分类号： G03F1/00
摘要： A method for fabricating an extreme ultraviolet lithography (EUVL) mask. In an etching step, at least a part of an absorption layer of an EUVL mask is etched by allowing a charged particle to irradiate the absorption layer under feed of a halogenated xenon gas. In an oxidant feed step, an oxidant is fed to the absorption layer after the etching step to form an oxidized layer at a side surface of the absorption layer that is not etched during the etching step.
摘要翻译： 一种用于制造极紫外光刻（EUVL）掩模的方法。 在蚀刻步骤中，通过使带电粒子在卤化氙气的供给下照射吸收层，对EUVL掩模的吸收层的至少一部分进行蚀刻。 在氧化剂进料步骤中，在蚀刻步骤之后，将氧化剂进料到吸收层，以在蚀刻步骤期间未被蚀刻的吸收层的侧表面上形成氧化层。
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4.发明授权Photomask defect correction method employing a combined device of a focused electron beam device and an atomic force microscope 有权使用聚焦电子束装置和原子力显微镜的组合装置的光掩模缺陷校正方法公开(公告)号：US07375352B2
公开(公告)日：2008-05-20
申请号：US11137843
申请日：2005-05-25
申请人： Osamu Takaoka , Ryoji Hagiwara
发明人： Osamu Takaoka , Ryoji Hagiwara
IPC分类号： G01N23/04
摘要： In order to make it possible to improve throughput of AFM scratch processing, enable correction of small defects in clear defect correction with a high degree of precision, and enable correction in a shorter period of time in the event of overcutting by AFM scratch processing, throughput of AFM scratch processing is increased by maximizing high-resolution of the electron beam device and minimizing the time taken in observations using a device incorporating both an electro-optical system and an AFM head in a vacuum, correcting small clear defects with high precision by eliminating portions left over from AFM scratch processing after applying a clear defect correction film using an electron beam while providing light-blocking film raw material, and correction in a short time is made possible by eliminating portions remaining using AFM scratch processing after applying a clear defect correction film using an electron beam while providing light-blocking film raw material also in cases of overcutting in AFM scratch processing.
摘要翻译： 为了提高AFM划痕处理的生产能力，能够以高精度校正清晰的缺陷校正中的小缺陷，并且能够在AFM划痕处理过度切割的情况下在更短的时间内进行修正 通过最大限度地提高电子束装置的高分辨率和最小化在使用在真空中并入电光系统和AFM头的装置的观察所花费的时间来增加AFM划痕处理，通过消除以高精度校正小的清晰缺陷 在使用电子束施加清晰的缺陷校正膜同时提供遮光膜原料之后，从AFM划痕处理剩余的部分，并且通过在施加清晰的缺陷校正之后通过消除使用AFM划痕处理剩余的部分在短时间内进行校正成为可能 同时在o的情况下也提供遮光膜原料的电子束 在AFM划痕处理中强化。
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公开(公告)号：US20050276932A1
公开(公告)日：2005-12-15
申请号：US10867865
申请日：2004-06-15
申请人： Osamu Takaoka , Ryoji Hagiwara
发明人： Osamu Takaoka , Ryoji Hagiwara
CPC分类号： C23C16/486 , C23C16/52
摘要： A microscopic projection or a characteristic pattern are formed in the vicinity of a region to be processed before processing using electron beam CVD, during processing an image of a region containing the projection or pattern formed by electron beam CVD is captured to obtain a current position of the projection or pattern, a difference between the position before staring and the current position is treated as a drift amount and processing is restarted at a region that has been subjected to microscopic adjustment of the electron irradiation region.
摘要翻译： 在使用电子束CVD处理之前，在要处理的区域附近形成微观投影或特征图案，在处理期间，捕获包含通过电子束CVD形成的突起或图案的区域的图像，以获得当前位置 将投影或图案之间的位置之间的差异与当前位置之间的差值作为漂移量进行处理，并且在经过电子照射区域的微观调整的区域重新开始处理。
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公开(公告)号：US20090226825A1
公开(公告)日：2009-09-10
申请号：US12380872
申请日：2009-03-03
申请人： Ryoji Hagiwara , Osamu Takaoka , Tomokazu Kozakai
发明人： Ryoji Hagiwara , Osamu Takaoka , Tomokazu Kozakai
IPC分类号： G03F1/00
摘要： A method for fabricating EUVL mask, by which the pattern of absorption layer can be fabricated at a high precision is provided. The method includes an etching step of etching black defect of the absorption layer of the EUVL mask by the irradiation of ion beam on the absorption layer under feed of xenon fluoride gas and further includes an oxidant feed step for feeding oxidant gas to the absorption layer after the etching step, and the etching step and the oxidant feed step are alternately carried out at plural times.
摘要翻译： 提供了一种制造EUVL掩模的方法，通过该方法可以高精度地制造吸收层的图案。 该方法包括蚀刻步骤，通过在氙氟化物气体的进料下在吸收层上照射离子束来蚀刻EUVL掩模的吸收层的黑色缺陷，并且还包括氧化剂进料步骤，用于在氧化物进料步骤 蚀刻步骤和蚀刻步骤以及氧化剂进料步骤被多次交替进行。
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7.发明申请PHOTOMASK DEFECT-SHAPE RECOGNITION APPARATUS, PHOTOMASK DEFECT-SHAPE RECOGNITION METHOD, AND PHOTOMASK DEFECT CORRECTION METHOD 审中-公开光电子缺陷形状识别装置，光电子缺陷形状识别方法和光电子缺陷校正方法公开(公告)号：US20090028420A1
公开(公告)日：2009-01-29
申请号：US12175061
申请日：2008-07-17
申请人： Takuya Nakaue , Atsushi Uemoto , Osamu Takaoka
发明人： Takuya Nakaue , Atsushi Uemoto , Osamu Takaoka
CPC分类号： G03F1/84
摘要： To recognize a defect portion and a mask pattern with a distinctly distinguished state through AFM observation of a photomask without being influenced by a double-tips image, provided is a method of recognizing, through AFM observation of a photomask including a substrate (2) and the mask pattern formed on the substrate (2a) with a predetermined pattern, a shape (5) of a projection type defect portion projected from the mask pattern, including the steps of storing a reference image an observation image in which an edge line of the defect portion is first confirmed at the time of AFM observation; and correcting, after the storing step, the edge line (L2) of the defect portion confirmed through the observation image obtained by the scanning performed hereinafter into a normal line (L1) with reference to the reference image, in which the shape of the defect portion is recognized based on the observed image after the correction.
摘要翻译： 通过AFM观察光掩模来识别具有明显区分状态的缺陷部分和掩模图案，而不受双尖端图像的影响，提供了一种通过AFM观察包括基板（2）和 以预定图案形成在基板（2a）上的掩模图案，从掩模图案突出的投影型缺陷部分的形状（5），包括以下步骤：将参考图像存储在其中的观察图像， AFM观察时首先确认缺陷部位; 并且在存储步骤之后，通过下文进行的扫描获得的观察图像确定的缺陷部分的边缘线（L2）参照参考图像变为法线（L1），其中缺陷的形状 基于校正后的观察图像来识别部分。
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8.发明申请Method of correcting opaque defect of photomask using atomic force microscope fine processing device 有权使用原子力显微镜精细加工装置校正光掩模不透明缺陷的方法公开(公告)号：US20070281222A1
公开(公告)日：2007-12-06
申请号：US11796996
申请日：2007-04-27
申请人： Toshio Doi , Kazutoshi Watanabe , Osamu Takaoka , Atsushi Uemoto
发明人： Toshio Doi , Kazutoshi Watanabe , Osamu Takaoka , Atsushi Uemoto
IPC分类号： G03F1/00
摘要： An opaque defect is processed by scanning with a high load or height fixed mode using a probe harder than a pattern material of a photomask at the time of going scanning, and is observed by scanning with a low load or intermittent contact mode at the time of returning scanning so as to detect an ending point of the opaque defect by the height information. When there is a portion reaching to a glass substrate as an ending point, this portion is not scanned by the high load or height fixed mode in the next processing, and only a portion not reaching to the ending point is scanned by the high load or height fixed mode.
摘要翻译： 通过使用在扫描时比光掩模的图案材料更硬的探针，以高负载或高度固定模式进行扫描来处理不透明缺陷，并且通过在低负载或间歇接触模式下扫描来观察不透明缺陷 返回扫描，以便通过高度信息检测不透明缺陷的终点。 当到达玻璃基板的部分为终点时，在下一个处理中该部分不被高负载或高度固定模式扫描，并且只有未达到终点的部分被高负载扫描 高度固定模式。
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9.发明申请公开(公告)号：US20070278177A1
公开(公告)日：2007-12-06
申请号：US11809518
申请日：2007-06-01
申请人： Kazushige Kondo , Masatoshi Yasutake , Takuya Nakaue , Osamu Takaoka , Atsushi Uemoto , Kazutoshi Watanabe , Yoshiteru Shikakura
发明人： Kazushige Kondo , Masatoshi Yasutake , Takuya Nakaue , Osamu Takaoka , Atsushi Uemoto , Kazutoshi Watanabe , Yoshiteru Shikakura
摘要： Under the condition that the height is fixed at a target height by turning off a feedback control system of a Z piezoelectric actuator of a cantilever of an atomic force microscope having a probe, which is harder than a processed material, flexure and twisting of the cantilever when carrying out mechanical processing while selectively repeating scanning only on the processed area (in the case of detecting flexure, parallel with the cantilever and in the case of detecting twisting, vertical with the cantilever) is monitored by a quadrant photodiode position sensing detector and the processing is repeated till a flexure amount or a twisting amount, namely, till an elastic deformation amount of the cantilever becomes not more than a determined threshold. It is not necessary to carry out scanning of the observation in obtaining the height information for detection of an end point, so that it is possible to improve a throughput of processing.
摘要翻译： 通过关闭具有探针的原子力显微镜的悬臂的Z型压电致动器的反馈控制系统，该高度被固定在目标高度的条件下，其比加工材料更硬，悬臂的弯曲和扭曲 当在被处理区域（在检测弯曲的情况下，与悬臂平行的情况下，并且在检测到扭转的情况下，与悬臂垂直的情况下）进行机械处理时，通过象限光电二极管位置感测检测器监视 重复加工直到挠曲量或扭转量，即直到悬臂的弹性变形量变得不大于确定的阈值。 在获得用于检测终点的高度信息时，不需要进行观察的扫描，从而可以提高处理的吞吐量。
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公开(公告)号：US20060254348A1
公开(公告)日：2006-11-16
申请号：US11488254
申请日：2006-07-18
申请人： Naoya Watanabe , Osamu Takaoka
发明人： Naoya Watanabe , Osamu Takaoka
IPC分类号： G01B5/28
摘要： There is provided a device in which a probe can be used for both of observation and correction, and which can, even if a next generation photomask of ultra minute structure is made an object, perform a desired processing without injuring a normal portion in a process of obtaining information of a position and a shape of a defect part, and without impairing the probe also at a processing time. It has been adapted such that, at an observation time, a contact pressure between a probe and a mask is reduced to 0.1 nN by applying a vibration of 1 kHz to 1 MHz to the probe. It has been adapted such that a cantilever used in the present invention is formed by a silicon material of 100-600 μm in length and 5-50 μm in thickness and, at the observation time, the probe contacts with the mask at the contact pressure of 0.1 nN and, at the processing time, a defect correction can be performed by causing the probe to contact with the mask at the contact pressure of 10 nN to 1 mN.
摘要翻译： 提供了一种可以将探头用于观察和校正的装置，并且即使下一代超微小结构的光掩模被制成物体也可以进行所需的处理而不损害处理中的正常部分 获得缺陷部分的位置和形状的信息，并且在处理时间也不损害探针。 已经适应使得在观察时间，通过向探针施加1kHz至1MHz的振动，将探针和掩模之间的接触压力降低至0.1nN。 已经适应使得本发明中使用的悬臂由长度为100〜600μm，厚度为5-50μm的硅材料形成，并且在观察时刻，探针以接触压力与掩模接触 0.1nN，并且在处理时间，可以通过使探针以10nN至1mN的接触压力与掩模接触来进行缺陷校正。
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