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    Optical reduction system with elimination of reticle diffraction induced bias
    4.
    发明授权
    Optical reduction system with elimination of reticle diffraction induced bias 失效
    具有消除掩模版衍射诱发偏差的光学还原系统

    公开(公告)号：US06836380B2

    公开(公告)日：2004-12-28

    申请号：US10366614

    申请日：2003-02-14

    申请人： Justin L. Kreuzer

    发明人： Justin L. Kreuzer

    IPC分类号： G02B1700

    CPC分类号： G03F7/70566 ,  G03F7/70225 ,  G03F7/70308 ,  G03F7/70358

    摘要： An optical reduction system for use in the photolithographic manufacture of semiconductor devices having one or more quarter-wave plates operating near the long conjugate end. A quarter-wave plate after the reticle provides linearly polarized light at or near the beamsplitter. A quarter-wave plate before the reticle provides circularly polarized or generally unpolarized light at or near the reticle. Additional quarter-wave plates are used to further reduce transmission loss and asymmetries from feature orientation. The optical reduction system provides a relatively high numerical aperture of 0.7 capable of patterning features smaller than 0.25 microns over a 26 mm×5 mm field. The optical reduction system is thereby well adapted to a step and scan microlithographic exposure tool as used in semiconductor manufacturing. Several other embodiments combine elements of different refracting power to widen the spectral bandwidth which can be achieved.

    摘要翻译： 一种用于光刻制造半导体器件的光学还原系统，其具有在长的共轭端附近操作的一个或多个四分之一波片。 光栅后面的四分之一波片提供线偏振光。 光罩之前的四分之一波片在分划板处或附近提供圆偏振或一般非偏振光。 额外的四分之一波片用于进一步降低传输损耗和不对称性。 光学还原系统提供了相对较高的数值孔径0.7，能够在26mm×5mm的场上图形化小于0.25微米的特征。 因此，光学还原系统很好地适用于在半导体制造中使用的步进和扫描微光刻曝光工具。 其它几个实施例组合了不同屈光力的元件以扩大可实现的光谱带宽。

    Optical reduction system with control of illumination polarization
    5.
    发明授权
    Optical reduction system with control of illumination polarization 失效
    具有照明偏振控制的光学还原系统

    公开(公告)号：US06680798B2

    公开(公告)日：2004-01-20

    申请号：US09841185

    申请日：2001-04-25

    申请人： Justin L. Kreuzer

    发明人： Justin L. Kreuzer

    IPC分类号： G02B530

    CPC分类号： G02B17/0892 ,  G02B5/3083 ,  G02B17/08 ,  G02B27/286 ,  G03F7/70225 ,  G03F7/70358 ,  G03F7/70566 ,  G03F7/70966

    摘要： An optical reduction system with polarization dose sensitive output for use in the photolithographic manufacture of semiconductor devices having variable compensation for reticle retardation before the long conjugate end. The variable compensation component(s) before the reticle provides accurate adjustment of the polarization state at or near the reticle. The variable compensation components can be variable wave plates, layered wave plates, opposing mirrors, a Berek's compensator and/or a Soleil-Babinet compensator. The catadioptric optical reduction system provides a relatively high numerical aperture of 0.7 capable of patterning features smaller than 0.25 microns over a 26 mm×5 mm field. The optical reduction system is thereby well adapted to a step and scan microlithographic exposure tool as used in semiconductor manufacturing. Several other embodiments combine elements of different refracting power to widen the spectral bandwidth which can be achieved.

    摘要翻译： 一种具有极化剂量敏感输出的光学还原系统，用于在长共轭末端之前具有对光掩膜延迟的可变补偿的半导体器件的光刻制造。 掩模版之前的可变补偿分量可以精确调整光罩处或附近的偏振状态。 可变补偿分量可以是可变波片，分层波片，相对镜，Berek补偿器和/或Soleil-Babinet补偿器。 反折射光学还原系统提供了相对较高的数值孔径0.7，能够在26mm×5mm的场上图形化小于0.25微米的特征。 因此，光学还原系统很好地适用于在半导体制造中使用的步进和扫描微光刻曝光工具。 其它几个实施例组合了不同屈光力的元件以扩大可实现的光谱带宽。

    Wafer handling method for use in lithography patterning
    6.
    发明授权
    Wafer handling method for use in lithography patterning 有权
    用于光刻图案的晶片处理方法

    公开(公告)号：US07298459B2

    公开(公告)日：2007-11-20

    申请号：US11182192

    申请日：2005-07-15

    申请人： Santiago E. del Puerto ,  Stephen Roux ,  Justin L. Kreuzer

    发明人： Santiago E. del Puerto ,  Stephen Roux ,  Justin L. Kreuzer

    IPC分类号： G03B27/32 ,  G03B27/58

    CPC分类号： H01L21/67225 ,  G03F7/707 ,  G03F7/7075 ,  G03F7/70808 ,  G03F9/7011 ,  G03F9/7096 ,  H01L21/67201 ,  H01L21/681

    摘要： A method utilizing a lithography system comprises a lithography patterning chamber, a wafer exchange chamber separated from the lithography patterning chamber by a first gate valve, and at least one alignment load-lock separated from the wafer exchange chamber by a second gate valve. The alignment load-lock includes an alignment stage that aligns a wafer during pump-down. The alignment load-lock can be uni-directional or bi-directional. The lithography system can include one or multiple alignment load-locks.

    摘要翻译： 使用光刻系统的方法包括光刻图案化室，通过第一闸阀与光刻图案化室分离的晶片交换室以及通过第二闸阀与晶片交换室分离的至少一个对准负载锁定。 对准负载锁定包括在抽空期间对准晶片的对准级。 对齐负载锁定可以是单向的或双向的。 光刻系统可以包括一个或多个对准加载锁。

    Optical reduction system with elimination of reticle diffraction induced bias
    10.
    发明授权
    Optical reduction system with elimination of reticle diffraction induced bias 失效

    公开(公告)号：US06522483B2

    公开(公告)日：2003-02-18

    申请号：US09841166

    申请日：2001-04-25

    申请人： Justin L. Kreuzer

    发明人： Justin L. Kreuzer

    IPC分类号： G02B1700

    CPC分类号： G03F7/70566 ,  G03F7/70225 ,  G03F7/70308 ,  G03F7/70358

    摘要： An optical reduction system for use in the photolithographic manufacture of semiconductor devices having one or more quarter-wave plates operating near the long conjugate end. A quarter-wave plate after the reticle provides linearly polarized light at or near the beamsplitter. A quarter-wave plate before the reticle provides circularly polarized or generally unpolarized light at or near the reticle. Additional quarter-wave plates are used to further reduce transmission loss and asymmetries from feature orientation. The optical reduction system provides a relatively high numerical aperture of 0.7 capable of patterning features smaller than 0.25 microns over a 26 mm×5 mm field. The optical reduction system is thereby well adapted to a step and scan microlithographic exposure tool as used in semiconductor manufacturing. Several other embodiments combine elements of different refracting power to widen the spectral bandwidth which can be achieved.