公开(公告)号：US20210104453A1

公开(公告)日：2021-04-08

申请号：US16499595

申请日：2018-03-26

申请人： PANASONIC CORPORATION

发明人： Yusuke KINOSHITA ,  Yasuhiro YAMADA ,  Takashi ICHIRYU ,  Hidekazu UMEDA

IPC分类号： H01L23/495 ,  H01L23/31

摘要： A bidirectional switch includes: a first lateral transistor including a first semiconductor layer on the surface of a first conductive layer; a second lateral transistor including a second semiconductor layer on the surface of a second conductive layer; a connection member; a first conductor member; and a second conductor member. The connection member connects the first lateral transistor and the second lateral transistor together in anti-series. The first conductor member electrically connects the first source electrode of the first lateral transistor to the first conductive layer. The second conductor member electrically connects the second source electrode of the second lateral transistor to the second conductive layer.

公开(公告)号：US20190006499A1

公开(公告)日：2019-01-03

申请号：US16125174

申请日：2018-09-07

申请人： PANASONIC CORPORATION

发明人： Yusuke KINOSHITA ,  Hidekazu UMEDA

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/423 ,  H01L27/06

CPC分类号： H01L29/778 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0629 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7786 ,  H01L29/861 ,  H02M5/293

摘要： A bidirectional switch includes a semiconductor element and a substrate potential stabilizer which stabilizes a substrate potential of a semiconductor element. The substrate potential stabilizer includes a first switch element and a second switch element. Both the first switch element and the second switch element are on when the semiconductor element is on.

公开(公告)号：US20140097433A1

公开(公告)日：2014-04-10

申请号：US14103155

申请日：2013-12-11

申请人： Panasonic Corporation

发明人： Noboru NEGORO ,  Hidekazu UMEDA ,  Nanako HIRASHITA ,  Tetsuzo UEDA

IPC分类号： H01L29/205 ,  H01L29/20 ,  H01L21/02 ,  H01L29/04

CPC分类号： H01L29/205 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/8258 ,  H01L27/0605 ,  H01L29/04 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/475 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7786 ,  H01L29/872

摘要： A semiconductor device includes a substrate; a carrier traveling layer formed on the substrate, made of first group III nitride semiconductor, and containing carriers traveling in a direction along a principal surface of the substrate; a barrier layer formed on the carrier traveling layer and made of second group III nitride semiconductor having a wider band gap than the first group III nitride semiconductor; and an electrode formed on the barrier layer. The device further includes a cap layer formed on the barrier layer at a side of the electrode, and made of third group III nitride semiconductor containing a mixture of single crystals and polycrystals.

摘要翻译： 半导体器件包括衬底; 载体行进层，形成在所述基板上，由第一III族氮化物半导体构成，并且包含沿着所述基板的主表面的方向行进的载流子; 形成在所述载体行进层上并且由具有比所述第一III族氮化物半导体更宽的带隙的第二III族氮化物半导体制成的阻挡层; 以及形成在阻挡层上的电极。 该器件还包括形成在电极侧的阻挡层上的盖层，由包含单晶和多晶体的混合物的第三III族氮化物半导体制成。

公开(公告)号：US20180012960A1

公开(公告)日：2018-01-11

申请号：US15695834

申请日：2017-09-05

申请人： PANASONIC CORPORATION

发明人： Yusuke KINOSHITA ,  Hidekazu UMEDA ,  Satoshi TAMURA

IPC分类号： H01L29/06 ,  H01L29/40 ,  H01L29/205 ,  H01L29/778 ,  H01L29/20

CPC分类号： H01L29/0661 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/808

摘要： A nitride semiconductor device includes a substrate; a nitride semiconductor layered structure disposed on the substrate and having a channel region; a first electrode and a second electrode both disposed on the nitride semiconductor layered structure; a first p-type nitride semiconductor layer disposed between the first electrode and the second electrode; and a first gate electrode disposed on the first p-type nitride semiconductor layer. The nitride semiconductor layered structure includes a first recess. The first p-type nitride semiconductor layer is at least partially disposed inside the first recess, and is separated from a side surface of the first recess.

公开(公告)号：US20130341682A1

公开(公告)日：2013-12-26

申请号：US13975085

申请日：2013-08-23

申请人： PANASONIC CORPORATION

发明人： Hidekazu UMEDA ,  Tetsuzo UEDA ,  Daisuke UEDA

IPC分类号： H01L29/06

CPC分类号： H01L29/0607 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/7786 ,  H01L29/861

摘要： A nitride semiconductor device includes a semiconductor substrate and a nitride semiconductor layer disposed on the semiconductor substrate. The semiconductor substrate includes a normal region, a carrier supplying region, and an interface current blocking region. The interface current blocking region surrounds the normal region and the carrier supplying region. The interface current blocking region and the carrier supplying region include impurities. The carrier supplying region has a conductivity type allowing the carrier supplying region to serve as a source of carriers supplied to or a destination of carriers supplied from a carrier layer generated at an interface between the nitride semiconductor layer and the semiconductor substrate. The interface current blocking region has a conductivity type allowing the interface current blocking region to serve as a potential barrier to the carriers.

摘要翻译： 氮化物半导体器件包括半导体衬底和设置在半导体衬底上的氮化物半导体层。 半导体衬底包括正常区域，载流子供应区域和界面电流阻挡区域。 界面电流阻挡区域围绕正常区域和载体供给区域。 界面电流阻挡区域和载流子供给区域包括杂质。 载体供给区域具有允许载流子供给区域用作从在氮化物半导体层和半导体基板之间的界面处产生的载流子层提供的载流子或目的地的载流子源的导电型。 界面电流阻挡区域具有允许界面电流阻挡区域用作载流子的势垒的导电类型。