Abstract:
A nitride-based semiconductor light-emitting device includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region having an m-plane as a growing plane; and an Ag electrode provided so as to be in contact with the growing plane of the p-type semiconductor region, wherein the Ag electrode has a thickness in a range of not less than 200 nm and not more than 1,000 nm; an integral intensity ratio of an X-ray intensity of a (111) plane on the growing plane of the Ag electrode to that of a (200) plane is in a range of not less than 20 and not more than 100; and the Ag electrode has a reflectance of not less than 70%.
Abstract:
Provided is a digital mirror apparatus including: a camera that captures an image of a user; a display having a display surface located at a position that allows the user to visually identify the display; a controller; a memory; and a control panel operable by the user, wherein the controller: horizontally flips a live image of the user that is being captured by the camera to generate a mirror image; reads a reference image to be compared with the mirror image; superimposes the reference image on the mirror image to display on the display a display image in a region of the display in which the reference image and the mirror image overlap one another; and stores one frame of the live image in the memory, based on an operation performed on the control panel by the user while the display image is displayed on the display.