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    Contact plug and interconnect employing a barrier lining and a backfilled conductor material
    1.
    发明授权
    Contact plug and interconnect employing a barrier lining and a backfilled conductor material 失效
    使用阻挡衬里和回填导体材料的接触插头和互连

    公开(公告)号：US4960732A

    公开(公告)日：1990-10-02

    申请号：US436399

    申请日：1989-11-14

    申请人： Pankaj Dixit ,  Jack Sliwa ,  Richard K. Klein ,  Craig S. Sander ,  Mohammad Farnaam

    发明人： Pankaj Dixit ,  Jack Sliwa ,  Richard K. Klein ,  Craig S. Sander ,  Mohammad Farnaam

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76843 ,  H01L21/76877 ,  H01L21/76879

    摘要： A stable, low resistance contact is formed in a contact hole (16) through an insulating layer (14), e.g., silicon dioxide, formed on a surface of a semiconductor substrate (12), e.g., silicon, to a portion of a doped region (10) in said semiconductor surface. The contact comprises (a) an adhesion and contacting layer (18) of titanium formed along the walls of the insulating layer and in contact with the portion of the doped region; (b) a barrier layer (20) formed over the adhesion and contacting layer; and (c) a conductive material (22) formed over the barrier layer and at least substantially filling said contact hole. A patterned metal layer (26) forms an ohmic contact interconnect to other devices and external circuitry.The adhesion and contacting layer and barrier layer are either physically or chemically vapor deposited onto the oxide surface. The conductive layer comprises one of CVD or bias sputtered tungsten, molybdenum or in situ doped CVD polysilicon.The contact of the invention avoids the problems of encroachment at the oxide-silicon interface and worm holes associated with other contact schemes but retains process simplicity.

    摘要翻译： 在通过绝缘层（14）的接触孔（16）中形成稳定的低电阻接触，所述绝缘层（例如，二氧化硅）形成在半导体衬底（12）（例如硅）的表面上， 区域（10）。 触点包括（a）沿着绝缘层的壁形成并与掺杂区域的部分接触的钛的粘合和接触层（18）; （b）形成在粘附和接触层上的阻挡层（20）; 和（c）导电材料（22），其形成在所述阻挡层上并且至少基本上填充所述接触孔。 图案化金属层（26）与其它器件和外部电路形成欧姆接触互连。 粘附和接触层和阻挡层物理或化学气相沉积到氧化物表面上。 导电层包括CVD或偏置溅射的钨，钼或原位掺杂的CVD多晶硅中的一种。 本发明的接触避免了在与其它接触方案相关联的氧化物 - 硅界面和蠕虫孔上侵占的问题，但是保持了工艺简单性。

    Contact plug and interconnect employing a barrier lining and a backfilled conductor material
    2.
    发明授权
    Contact plug and interconnect employing a barrier lining and a backfilled conductor material 失效
    使用阻挡衬里和回填导体材料的接触插头和互连

    公开(公告)号：US4884123A

    公开(公告)日：1989-11-28

    申请号：US16429

    申请日：1987-02-19

    申请人： Pankaj Dixit ,  Jack Sliwa ,  Richard K. Klein ,  Craig S. Sander ,  Mohammad Farnaam

    发明人： Pankaj Dixit ,  Jack Sliwa ,  Richard K. Klein ,  Craig S. Sander ,  Mohammad Farnaam

    IPC分类号： H01L29/43 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768

    CPC分类号： H01L21/76846 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/76879 ,  Y10S257/915

    摘要： A stable, low resistance contact is formed in a contact hole (16) through an insulating layer (14), e.g., silicon dioxide, formed on a surface of a semiconductor substrate (12), e.g., silicon, to a portion of a doped region (10) in said semiconductor surface. The contact comprises (a) an adhesion and contacting layer (18) of titanium formed along the walls of the insulating layer and in contact with the portion of the doped region; (b) a barrier layer (20) formed over the adhesion and contacting layer; and (c) a conductive material (22) formed over the barrier layer and at least substantially filling said contact hole. A patterned metal layer (26) forms an ohmic contact interconnect to other devices and external circuitry. The adhesion and contacting layer and barrier layer are either physically or chemically vapor deposited onto the oxide surface. The conductive layer comprises one of CVD or bias sputtered tungsten, molybdenum or in situ doped CVD polysilicon. The contact of the invention avoids the problems of encroachment at the oxide-silicon interface and worm holes associated with other contact schemes but retains process simplicity.

    High speed interconnect system with refractory non-dogbone contacts and an active electromigration suppression mechanism
    3.
    发明授权
    High speed interconnect system with refractory non-dogbone contacts and an active electromigration suppression mechanism 失效
    高速互连系统，具有难治的非狗骨接触和主动的电迁移抑制机制

    公开(公告)号：US4847674A

    公开(公告)日：1989-07-11

    申请号：US24283

    申请日：1987-03-10

    申请人： Jack Sliwa ,  Mohammad Farnaam ,  Pankaj Dixit ,  Lewis N. Shen

    发明人： Jack Sliwa ,  Mohammad Farnaam ,  Pankaj Dixit ,  Lewis N. Shen

    IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/532

    CPC分类号： H01L21/76886 ,  H01L23/532 ,  H01L2924/0002 ,  Y10S257/90 ,  Y10S257/915 ,  Y10T428/12576

    摘要： An interconnect (16', 18', 18"), whose interlevel contacts comprise refractory (10) to refractory or refractory to semiconductor substrate (13) interfaces, comprises patterned refractory core portions (10), consisting of tungsten or molybdenum, having top portions (10a) and opposed side portions (10b), provided with sidewall spacers (32a) of aluminum, gold or copper or alloys thereof and formed on surface (12a) of insulating layers (12). The sidewall spacers afford lateral low resistivity cladding of the refractory portions as well as suppression of the electromigration failure modes of voiding and whiskering, while leaving the top portion of the core portions available for refractory to refractory contacts and the bottom portion of the core portions available for refractory to refractory or refractory to silicon contacts. In this manner, an interconnect system is provided which has low electrical resistivity but which avoids the much poorer electromigration performance associated with aluminum to aluminum, aluminum to silicon, or aluminum to refractory contact-making as well as with industry-standard bilayer structures comprising refractory/aluminum for interconnect-making.

    Making a high speed interconnect system with refractory non-dogbone contacts and an active electromigration suppression mechanism
    4.
    发明授权
    Making a high speed interconnect system with refractory non-dogbone contacts and an active electromigration suppression mechanism 失效
    制造具有难治性非狗骨接触的高速互连系统和有源电迁移抑制机制

    公开(公告)号：US4962060A

    公开(公告)日：1990-10-09

    申请号：US346050

    申请日：1989-05-02

    申请人： Jack Sliwa ,  Mohammad Farnaam ,  Pankaj Dixit ,  Lewis N. Shen

    发明人： Jack Sliwa ,  Mohammad Farnaam ,  Pankaj Dixit ,  Lewis N. Shen

    IPC分类号： H01L21/768 ,  H01L23/532

    CPC分类号： H01L23/532 ,  H01L21/76886 ,  H01L2924/0002 ,  Y10S438/927 ,  Y10T428/12743

    摘要： An interconnect (16',18', 18"), whose interlevel contacts comprise refractory (10) to refractory or refractory to semiconductor substrate (13) interfaces, comprises patterned refractory core portions (10), consisting of tungsten or molybdenum, having top portions (10a) and opposed side portions (10b), provided with sidewall spacers (32a) of aluminum, gold or copper or alloys thereof and formed on surfaces (12a) of insulating layers (12). The sidewall spacers afford lateral low resistivity cladding of the refractory portions as well as suppression of the electromigration failure modes of voiding and whiskering, while leaving the top portion of the core portions available for refractory to refractory contacts and the bottom portion of the core portions available for refractory to refractory or refractory to silicon contacts. In this manner, an interconnect system is provided which has low electrical resistivity but which avoids the much poorer electromigration performance associated with aluminum to aluminum, aluminum to silicon, or aluminum to refractory contact-making as well as with industry-standard bilayer structures comprising refractory/aluminum for interconnect-making.

    摘要翻译： 其互连（16'，18'，18“），其层间接触包括耐火材料（10），用于耐火材料或难以与半导体衬底（13）接口，包括由钨或钼组成的图案化的耐火芯部分（10），其具有 顶部（10a）和相对的侧部（10b），其设置有铝，金或铜的侧壁间隔件（32a）或其合金，并形成在绝缘层（12）的表面（12a）上。 侧壁间隔件提供了耐火部分的侧向低电阻率包层以及抑制空洞和晶须的电迁移失效模式，同时使芯部分的顶部部分可用于耐火接触点的耐火材料，并且芯部分的底部可用 用于难熔或难以与硅接触。 以这种方式，提供了一种互连系统，其具有低电阻率，但是避免了与铝，铝，铝或铝或耐火材料接触相关的更差的电迁移性能，以及包括耐火材料的工业标准双层结构 /铝用于互连。

    Titanium nitride as an antireflection coating on highly reflective layers for photolithography
    5.
    发明授权
    Titanium nitride as an antireflection coating on highly reflective layers for photolithography 失效
    氮化钛作为用于光刻的高反射层上的抗反射涂层

    公开(公告)号：US4820611A

    公开(公告)日：1989-04-11

    申请号：US43402

    申请日：1987-04-24

    申请人： William H. Arnold, III ,  Mohammad Farnaam ,  Jack Sliwa

    发明人： William H. Arnold, III ,  Mohammad Farnaam ,  Jack Sliwa

    IPC分类号： G03F7/09 ,  G03C1/94

    CPC分类号： G03F7/091 ,  Y10S430/151 ,  Y10S438/952 ,  Y10S438/98

    摘要： Reflection of incident optical radiation (18) from a highly reflective metal layer (12), such as aluminum or titanium, into a photoresist layer (14) is reduced by interposing a layer of titanium nitride (16) between the metal and photoresist layers. The thickness of the TiN layer depends on the wavelength of the optical radiation used to expose the photoresist and on the optical properties of the underlying metal layer. Reflectance of less than about 2% may be achieved using the TiN layer in conjunction with aluminum and less than about 5% in conjunction with titanium, in accordance with the invention. If left in place after patterning an underlying aluminum layer, the TiN layer also serves to suppress hillock formation in the aluminum layer.

    摘要翻译： 通过在金属和光致抗蚀剂层之间插入一层氮化钛（16），将诸如铝或钛的高反射金属层（12）的入射光辐射（18）反射到光致抗蚀剂层（14）中。 TiN层的厚度取决于用于曝光光致抗蚀剂的光辐射的波长和底层金属层的光学性质。 根据本发明，使用TiN层与铝结合并且小于约5％的钛可以实现小于约2％的反射率。 如果在图案化下面的铝层之后留下适当位置，则TiN层还用于抑制铝层中的小丘形成。

    Method and apparatus for monitoring cervical diameter
    8.
    发明授权
    Method and apparatus for monitoring cervical diameter 失效
    监测颈部直径的方法和装置

    公开(公告)号：US6039701A

    公开(公告)日：2000-03-21

    申请号：US706575

    申请日：1996-09-05

    申请人： Jack Sliwa ,  Lee A. Blumenfeld

    发明人： Jack Sliwa ,  Lee A. Blumenfeld

    IPC分类号： A61B5/107 ,  A61B5/00

    CPC分类号： A61B5/1076 ,  A61B5/412 ,  A61B5/435 ,  A61B2562/0261

    摘要： An apparatus for measuring cervical diameter comprises a support structure and measurement devices for detecting changes in cervical diameter, either directly or indirectly through changes in the size of the support structure. The support structure may conform to a cervical surface, typically being a peripherally expansible lumen or expansible structure. Alternatively, the support structure may engage the vaginal wall or fornices. Measurement devices may include gages which determine change in sizes of an expansible loop, electronic devices for measuring changes in transmitted or reflected energy, or combinations thereof. The devices are suitable for use on ambulatory patients and in out-patient situations.

    摘要翻译： 用于测量颈部直径的装置包括支撑结构和用于通过支撑结构尺寸的变化来直接或间接地检测颈部直径的变化的测量装置。 支撑结构可以符合子宫颈表面，通常是周边可扩张的内腔或可膨胀的结构。 或者，支撑结构可以接合阴道壁或导管。 测量装置可以包括确定可扩展回路的尺寸变化的量规，用于测量透射或反射能量的变化的电子装置或其组合。 这些装置适用于门诊病人和门诊病人。