公开(公告)号：US20080139969A1

公开(公告)日：2008-06-12

申请号：US11571097

申请日：2005-06-29

申请人： Paul A. Gough ,  Matthew J. Bickerton

发明人： Paul A. Gough ,  Matthew J. Bickerton

IPC分类号： A61B5/103 ,  A41D1/00

CPC分类号： A61B5/1126 ,  A61B5/4528 ,  A61B5/6804 ,  A61B2562/164

摘要： A fabric sensor for measuring body movement comprises first and second gripping sections and a third sensing section intermediate of the first and second sections. The third sensing section has a lower amount of grip than either the first or second gripping sections. The third sensing section comprises a construction of first and second fibres, the first fibres being of a conductive nature, and the second fibres being of an elastic nature. A garment comprising one or more substantially tubular sections for receiving a body portion and including one or more of the fabric sensors is also described.

摘要翻译： 用于测量身体移动的织物传感器包括第一和第二抓握部分以及第一和第二部分中间的第三感测部分。 第三检测部分具有比第一或第二夹持部分更少的抓握量。 第三感测部分包括第一和第二纤维的结构，第一纤维具有导电性质，第二纤维具有弹性。 还描述了包括用于接收主体部分并且包括一个或多个织物传感器的一个或多个基本管状部分的衣服。

公开(公告)号：US07522951B2

公开(公告)日：2009-04-21

申请号：US10540594

申请日：2003-12-11

申请人： Paul A. Gough ,  Matthew J. Bickerton

发明人： Paul A. Gough ,  Matthew J. Bickerton

IPC分类号： A61B5/04

CPC分类号： D04B1/14 ,  A61B5/0408 ,  A61B5/04085 ,  A61B5/6831 ,  A61N1/0472 ,  A61N1/0476 ,  A61N1/0484

摘要： An electrode arrangement (10) comprises a knitted electrically conductive electrode portion (12) containing electrically conductive yarn and at least one portion (14) of moisture impermeable electrically conductive material attached to the electrode portion (12). During use the electrode portion (12) and portion of material (14) are applied to a wearers skin. The moisture impermeable material portion (14) is of silicon loaded with carbon black. The moisture impermeable portion (14) encourages perspiration of a user and the perspiration trapped between the skin and moisture impermeable portion (14) reduces skin to electrode contact resistance to increase efficiency of detection of user heart rate or other electrical signals generated by a user.

摘要翻译： 电极装置（10）包括含有导电纱线的针织导电电极部分（12）和附着到电极部分（12）上的不透水导电材料的至少一部分（14）。 在使用期间，将电极部分（12）和部分材料（14）施加到穿着者皮肤上。 不透水材料部分（14）是装有炭黑的硅。 不透湿部分（14）促进使用者的汗水，并且被吸收在皮肤和不透湿部分（14）之间的汗液可减少皮肤与电极的接触电阻，从而提高用户心率或用户生成的其他电信号的检测效率。

公开(公告)号：US07093753B2

公开(公告)日：2006-08-22

申请号：US10984136

申请日：2004-11-09

申请人： Paul A. Gough ,  Jonathan Farringdon

发明人： Paul A. Gough ,  Jonathan Farringdon

IPC分类号： G06K5/00 ,  A45F5/02

CPC分类号： A45C13/10 ,  A41D27/201 ,  A45C1/00 ,  A45C13/18 ,  C08L2201/12 ,  Y10T24/1376

摘要： A pocket suitable for incorporation in garments, luggage items, personal accessories or the like is provided with an active mechanism and control apparatus to close the pocket. Such closing action may be triggered manually but can also be triggered automatically when the pocket is moved away from an upright orientation or experiences a jolting action. In one embodiment the closing action is performed by a length of shape memory material which contracts when heated to pull the pocket front panel top portion against the rear panel top portion and close the pocket opening.

公开(公告)号：US06834797B2

公开(公告)日：2004-12-28

申请号：US10028125

申请日：2001-12-21

申请人： Paul A. Gough ,  Jonathan Farringdon

发明人： Paul A. Gough ,  Jonathan Farringdon

IPC分类号： G06K500

CPC分类号： A45C13/10 ,  A41D27/201 ,  A45C1/00 ,  A45C13/18 ,  C08L2201/12 ,  Y10T24/1376

摘要： A pocket suitable for incorporation in garments, luggage items, personal accessories or the like is provided with an active mechanism and control apparatus to close the pocket. Such closing action may be triggered manually but can also be triggered automatically when the pocket is moved away from an upright orientation or experiences a jolting action. In one embodiment the closing action is performed by a length of shape memory material which contracts when heated to pull the pocket front panel top portion against the rear panel top portion and close the pocket opening.

摘要翻译： 适于装入服装，行李物品，个人附件等的口袋设置有用于关闭口袋的主动机构和控制装置。 这种关闭动作可以手动触发，但是当口袋从直立方向移动或经历颠簸动作时也可以自动触发。 在一个实施例中，闭合动作由一定长度的形状记忆材料执行，该长度的形状记忆材料在被加热时收缩，以将口袋前面板顶部部分拉靠在后面板顶部上并闭合口袋开口。

公开(公告)号：US06807869B2

公开(公告)日：2004-10-26

申请号：US10304104

申请日：2002-11-25

申请人： Jonathan Farringdon ,  Paul A. Gough ,  Andrew J. Moore

发明人： Jonathan Farringdon ,  Paul A. Gough ,  Andrew J. Moore

IPC分类号： G01L300

CPC分类号： A61B5/1038 ,  A43B3/0005 ,  G01C22/006 ,  G06F19/00

摘要： A sensor for detecting the presence of a force exerted by a persons foot on the ground is provided in a shoe, the sensor interposed between the foot and the ground in the region of the sole of the shoe. The sensor includes a resilient compressible elastomeric middle layer of insulating material disposed between a lower conductive fabric layer and a plurality of upper conductive fabric layer portions. The resilient elastomeric layer includes a plurality of embedded electrically conductive metal filaments extending from a first surface towards a second surface of the elastomeric layer. In regions of the sensor compressed by force ‘F’ due to a persons weight the thickness of the elastomeric layer is reduced and so the metal filaments are of sufficient length to provide electrical continuity through the elastomeric layer between the lower and upper conductive fabric. The occurrence of such continuity is monitored and processed by a system to provide data for use in the field of sports training and athlete monitoring applications.

摘要翻译： 用于检测由人脚施加在地面上的力的传感器设置在鞋中，传感器插入在鞋底中的脚与地面之间。 传感器包括设置在下导电织物层和多个上导电织物层部分之间的可弹性的可压缩弹性体中间层绝缘材料。 弹性弹性体层包括从弹性体层的第一表面延伸到第二表面的多个嵌入的导电金属细丝。 在传感器压缩的传感器的区域中，由于人的重量，弹性体层的厚度减小，因此金属丝具有足够的长度，以通过下导电织物和上导电织物之间的弹性体层提供电连续性。 这种连续性的发生由系统监测和处理，以提供用于运动训练和运动员监视应用领域的数据。

公开(公告)号：US5362980A

公开(公告)日：1994-11-08

申请号：US94802

申请日：1993-07-20

申请人： Paul A. Gough

发明人： Paul A. Gough

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L27/02 ,  H01L27/04 ,  H01L29/739 ,  H01L27/08 ,  H01L23/56

CPC分类号： H01L27/0251 ,  H01L2924/0002

摘要： A semiconductor component is formed by an insulated gate field effect device having a semiconductor body with a first region of one conductivity type adjacent one major surface, a second region defining a conduction channel area separating a third region from the first region, an insulated gate adjoining the conduction channel area for controlling current flow between the first and third regions and an injection region for injecting opposite conductivity type charge carriers into the first region, and a protection device for limiting the current through the insulated gate field effect device. The protection device is formed by a fourth region of the opposite conductivity type formed within the first region, a fifth region separated from the first region by the fourth region, a first conductive path connecting the fifth region to the insulated gate for allowing the flow of one conductivity type charge carriers towards the insulated gate and a second conductive path connected to the fourth region. An area of the fourth region beneath the fifth region provides a route for opposite conductivity type charge carriers to the second conductive path for causing, when the current through the insulated gate field effect device exceeds a predetermined limit, the pn junction between the fourth and first region to become forward biassed thereby causing the voltage at the insulated gate to alter so as to limit the current through the insulated gate field effect device.

摘要翻译： 半导体部件由具有半导体本体的绝缘栅场效应器件形成，半导体本体具有与一个主表面相邻的一个导电类型的第一区域，限定从第一区域分离第三区域的导电沟道区域的第二区域， 用于控制第一和第三区域之间的电流的导电沟道区域和用于将相反导电型电荷载流子注入到第一区域中的注入区域，以及用于限制通过绝缘栅场效应器件的电流的保护装置。 保护装置由形成在第一区域内的相反导电类型的第四区域形成，第五区域与第一区域隔开第四区域;第一导电路径，其将第五区域连接到绝缘栅极， 朝向绝缘栅极的一个导电型电荷载流子和连接到第四区域的第二导电路径。 第五区域下方的第四区域的区域为第二导电路径提供了相反导电型电荷载流子的路线，当通过绝缘栅场效应器件的电流超过预定极限时，导致第四和第一 区域变为偏置，从而导致绝缘栅极处的电压改变，以限制通过绝缘栅场效应器件的电流。

公开(公告)号：US5352915A

公开(公告)日：1994-10-04

申请号：US103943

申请日：1993-08-09

申请人： Keith M. Hutchings ,  Andrew L. Goodyear ,  Paul A. Gough

发明人： Keith M. Hutchings ,  Andrew L. Goodyear ,  Paul A. Gough

IPC分类号： H01L27/06 ,  H01L27/02 ,  H01L27/04 ,  H01L29/78 ,  H01L29/10

CPC分类号： H01L29/7813 ,  H01L27/0251 ,  H01L29/7802

摘要： A semiconductor component (1a) has first and second insulated gate field effect devices (T1 and T2) formed within the same seminconductor body (2). The devices (T1 and T2) have a common first main electrode (D) and an arrangement (20) provides a resistive connection (20b) between a second main electrode (S2)of the second device (T2) and the insulated gate (G1) of the first device (T1). The second device (T2) is formed so as to be more susceptible than the first device (T1) to parasitic bipolar transistor action for causing, when the first and second devices (T1 and T2) are turned off and a voltage exceeding a critical voltage (V.sub.c) is applied to the common first main electrode (D), the parasitic bipolar transistor (B) within the second device (T2) to turn on producing a current for causing, by virtue of the resistive connection (20b) between the second main electrode (S2) of the second device (T2) and the insulated gate (G1) of the first device (T1), the voltage at the insulated gage (G1) of the first device (T1) to alter to cause the device (T1) to turn on. This allows the energy of the overvoltage to be dissipated by conduction of the first insulated gate field effect device to avoid any potentially damaging effects, such as irreversible bipolar breakdown or performance degradation due to hot carrier injection into the gate oxide.

摘要翻译： 半导体部件（1a）具有形成在同一半导体体（2）内的第一和第二绝缘栅场效应器件（T1和T2）。 器件（T1和T2）具有共同的第一主电极（D），并且布置（20）在第二器件（T2）的第二主电极（S2）和绝缘栅极（G1）之间提供电阻连接（20b） ）的第一设备（T1）。 第二器件（T2）形成为比第一器件（T1）更易受到寄生双极晶体管的作用，当第一和第二器件（T1和T2）截止并且电压超过临界电压时 （Vc）施加到公共第一主电极（D），第二器件（T2）内的寄生双极晶体管（B），以产生用于使第二器件（T2）内的电阻连接（20b） 第二装置（T2）的主电极（S2）和第一装置（T1）的绝缘栅极（G1），第一装置（T1）的绝缘规格（G1）的电压改变以使装置 T1）打开。 这允许通过第一绝缘栅场效应器件的导通来消除过电压的能量，以避免任何潜在的破坏性影响，例如由于热载流子注入到栅极氧化物中的不可逆双极击穿或性能劣化。

公开(公告)号：US5442216A

公开(公告)日：1995-08-15

申请号：US242687

申请日：1994-05-13

申请人： Paul A. Gough

发明人： Paul A. Gough

IPC分类号： G05F3/16 ,  H01L21/331 ,  H01L21/336 ,  H01L21/822 ,  H01L27/02 ,  H01L27/04 ,  H01L29/06 ,  H01L29/10 ,  H01L29/417 ,  H01L29/73 ,  H01L29/78 ,  H02H3/08

CPC分类号： H01L29/7815 ,  H01L27/0251 ,  H01L29/7802 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/41766

摘要： A semiconductor body (2) has a first region (3) providing a current path to a first main electrode (4) and carrying a plurality of active device cells (5). The majority (5a) of the active device cells are connected to a second main electrode (6) for providing a main current path through the device between the first and second main electrodes (4 and 6). At least one remaining active device cell forms a monitor cell (5b) and is connected to a monitor electrode (7) for providing a monitor current path through the device between the first main electrode (4) and the monitor electrode (7). The one monitor cell (5b) is formed differently from the majority (5a) of the active device cells so as to be more susceptible to failure than the majority of the active device cells so providing an early warning of the imminent failure of the device enabling evasive action to be taken to inhibit failure of the entire device.

摘要翻译： 半导体本体（2）具有提供到第一主电极（4）的电流路径并且承载多个有源器件单元（5）的第一区域（3）。 有源器件单元的大部分（5a）连接到第二主电极（6），用于提供穿过第一和第二主电极（4和6）之间的器件的主电流通路。 至少一个剩余的有源器件单元形成监视器单元（5b），并连接到监视电极（7），用于提供穿过第一主电极（4）和监视电极（7）之间的器件的监视电流路径。 一个监视器单元（5b）与主动设备单元的多数（5a）不同地形成，以便比大多数有源器件单元更容易发生故障，从而提供器件即将发生故障的早期警告，使得能够 采取回避措施来抑制整个设备的故障。

公开(公告)号：US5202750A

公开(公告)日：1993-04-13

申请号：US894166

申请日：1992-06-03

申请人： Paul A. Gough

发明人： Paul A. Gough

IPC分类号： H01L29/745 ,  H01L29/749

CPC分类号： H01L29/749 ,  H01L29/7455

摘要： A semiconductor device includes a thyristor (4,5,8,9) in which connection is made to the cathode region (9) of the thyristor by means of an MOS structure. The MOS structure is provided by a fifth region (11) forming a pn junction with the cathode region (9), a sixth region (13) in contact with the cathode electrode (C) and forming a pn junction (14) with the fifth region (11), and an insulated gate (15) overlying a conduction channel area (110) of the fifth region (11) for defining a gateable conductive path for charge carriers into the cathode region (9) to initiate thyristor action. The conductive path is thus controlled by the voltage applied to the insulated gate (15), enabling the flow of charge carriers to the cathode region (9) to be stemmed by application of an appropriate gate voltage oxide. The fifth region (11) is electrically connected to provide a path for extraction of charge carriers during turn-off of the thyristor, thereby improving the controllable current capability of the thyristor.

摘要翻译： 半导体器件包括晶闸管（4,5,8,9），其中通过MOS结构连接到晶闸管的阴极区域（9）。 MOS结构由与阴极区域（9）形成pn结的第五区域（11），与阴极电极（C）接触的第六区域（13）和与第五区域形成pn结（14）的第五区域 区域（11）和覆盖第五区域（11）的导电沟道区域（110）的绝缘栅极（15），用于限定用于电荷载流子进入阴极区域（9）的可栅极导电路径，以启动晶闸管动作。 因此，通过施加到绝缘栅极（15）的电压来控制导电路径，使得能够通过施加适当的栅极电压氧化物来阻止到阴极区域（9）的电荷载流子的流动。 第五区域（11）电连接以提供在晶闸管关断期间提取电荷载流子的路径，从而提高晶闸管的可控电流能力。