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    Self-aligned masks and methods of use
    2.
    发明授权
    Self-aligned masks and methods of use 有权
    自对准面具和使用方法

    公开(公告)号：US09403675B2

    公开(公告)日：2016-08-02

    申请号：US14466059

    申请日：2014-08-22

    申请人： Paul S. Ho ,  Zhuojie Wu

    发明人： Paul S. Ho ,  Zhuojie Wu

    IPC分类号： H01L21/3065 ,  H01L21/308 ,  H01L21/027 ,  B81C1/00 ,  H01L21/033 ,  H01L21/311

    CPC分类号： B81C1/00 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31122

    摘要： The disclosure relates to a method for forming a nanoscale structure by forming a pattern on a selectively etched layer located on top of a substrate using lithography, wherein the pattern results a gap having sidewalls, performing RIE on the gap having sidewalls, wherein RIE results in the formation of a self-aligned mask on the bottom wall of the gap with unprotected regions on the bottom wall of the gap near the junctions with the sidewalls, and wet etching the gap having a self-aligned mask and unprotected regions to remove the substrate under the unprotected regions to form a nanoscale structure in the substrate. The disclosure also relates to a nanoscale structure array including a plurality of nanotrenches, nanochannels or nanofins having a width of 50 nm or less and an average variation in width of 5% or less along the entire length of each nanotrench, nanochannel or nanofin.

    摘要翻译： 本公开涉及一种用于通过使用光刻在位于衬底顶部的选择性蚀刻层上形成图案形成纳米尺度结构的方法，其中所述图案形成具有侧壁的间隙，在具有侧壁的间隙上执行RIE，其中RIE导致 在与侧壁接合的间隙的底壁上的未保护区域的间隙的底壁上形成自对准掩模，并且湿蚀刻具有自对准掩模和未保护区域的间隙以去除衬底 在未保护的区域下，在衬底中形成纳米尺度结构。 本公开还涉及纳米尺度结构阵列，其包括沿着每个纳米管，纳米通道或纳米芬的整个长度的宽度为50nm或更小的宽度为5％或更小的多个纳米管，纳米通道或纳米线。

    SELF-ALIGNED MASKS AND METHODS OF USE
    4.
    发明申请
    SELF-ALIGNED MASKS AND METHODS OF USE 有权
    自对准掩模和使用方法

    公开(公告)号：US20150054135A1

    公开(公告)日：2015-02-26

    申请号：US14466059

    申请日：2014-08-22

    申请人： Paul S. Ho ,  Zhuojie Wu

    发明人： Paul S. Ho ,  Zhuojie Wu

    IPC分类号： H01L21/3065 ,  H01L21/308 ,  H01L21/027

    CPC分类号： B81C1/00 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31122

    摘要： The disclosure relates to a method for forming a nanoscale structure by forming a pattern on a selectively etched layer located on top of a substrate using lithography, wherein the pattern results a gap having sidewalls, performing RIE on the gap having sidewalls, wherein RIE results in the formation of a self-aligned mask on the bottom wall of the gap with unprotected regions on the bottom wall of the gap near the junctions with the sidewalls, and wet etching the gap having a self-aligned mask and unprotected regions to remove the substrate under the unprotected regions to form a nanoscale structure in the substrate.The disclosure also relates to a nanoscale structure array including a plurality of nanotrenches, nanochannels or nanofins having a width of 50 nm or less and an average variation in width of 5% or less along the entire length of each nanotrench, nanochannel or nanofin.

    摘要翻译： 本公开涉及一种用于通过使用光刻在位于衬底顶部的选择性蚀刻层上形成图案形成纳米尺度结构的方法，其中所述图案形成具有侧壁的间隙，在具有侧壁的间隙上执行RIE，其中RIE导致 在与侧壁接合的间隙的底壁上的未保护区域的间隙的底壁上形成自对准掩模，并且湿蚀刻具有自对准掩模和未保护区域的间隙以去除衬底 在未保护的区域下，在衬底中形成纳米尺度结构。 本公开还涉及纳米尺度结构阵列，其包括沿着每个纳米管，纳米通道或纳米芬的整个长度的宽度为50nm或更小的宽度为5％或更小的多个纳米管，纳米通道或纳米线。