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公开(公告)号：US20090072212A1
公开(公告)日：2009-03-19
申请号：US11914662
申请日：2006-05-04
申请人： Paul Van Der Sluis , Andrei Mijiritskii , Pierre H. Woerlee , Victor M.G. Van Acht , Nicolaas Lambert
发明人： Paul Van Der Sluis , Andrei Mijiritskii , Pierre H. Woerlee , Victor M.G. Van Acht , Nicolaas Lambert
CPC分类号： G11C17/16 , H01L23/5252 , H01L27/112 , H01L27/11206 , H01L2924/0002 , H01L2924/00
摘要： A One Time Programmable (OTP) memory cell (10) comprising a first, metallic layer (12) coated with a second, conductive stable transition compound (14) with an insulating layer (16) there-between. The first and second layers (12, 14) are selected according to the difference in Gibbs Free Energy between them, which dictates the chemical energy that will be generated as a result of an exothermic chemical reaction between the two materials. The materials of the first and second layers (12, 14) are highly thermally stable in themselves but, when a voltage is applied to the cell (10), a localized breakdown of the insulative layer (16) results which creates a hotspot (18) that sets off an exothermic chemical reaction between the first and second layers (12, 14). The exothermic reaction generates sufficient heat (20) to create a short circuit across the cell and therefore reduce the resistance thereof.
摘要翻译： 一次性可编程（OTP）存储器单元（10），包括涂覆有第二导电稳定过渡化合物（14）的第一金属层（12），其间具有绝缘层（16）。 第一层和第二层（12,14）根据它们之间的吉布斯自由能的差异来选择，这决定了由于两种材料之间的放热化学反应而产生的化学能。 第一层和第二层（12,14）的材料本身是高度热稳定的，但是当向单元（10）施加电压时，导致绝缘层（16）的局部击穿产生热点（18 ），其在第一和第二层（12,14）之间引起放热化学反应。 放热反应产生足够的热量（20）以在电池上产生短路并因此降低其电阻。
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公开(公告)号：US07923813B2
公开(公告)日：2011-04-12
申请号：US11914662
申请日：2006-05-04
申请人： Paul Van Der Sluis , Andrei Mijiritskii , Pierre H. Woerlee , Victor M. G Van Acht , Nicolaas Lambert
发明人： Paul Van Der Sluis , Andrei Mijiritskii , Pierre H. Woerlee , Victor M. G Van Acht , Nicolaas Lambert
CPC分类号： G11C17/16 , H01L23/5252 , H01L27/112 , H01L27/11206 , H01L2924/0002 , H01L2924/00
摘要： A One Time Programmable (OTP) memory cell (10) comprising a first, metallic layer (12) coated with a second, conductive stable transition compound (14) with an insulating layer (16) there-between. The first and second layers (12, 14) are selected according to the difference in Gibbs Free Energy between them, which dictates the chemical energy that will be generated as a result of an exothermic chemical reaction between the two materials. The materials of the first and second layers (12, 14) are highly thermally stable in themselves but, when a voltage is applied to the cell (10), a localized breakdown of the insulative layer (16) results which creates a hotspot (18) that sets off an exothermic chemical reaction between the first and second layers (12, 14). The exothermic reaction generates sufficient heat (20) to create a short circuit across the cell and therefore reduce the resistance thereof.
摘要翻译： 一次性可编程（OTP）存储器单元（10），包括涂覆有第二导电稳定过渡化合物（14）的第一金属层（12），其间具有绝缘层（16）。 第一层和第二层（12,14）根据它们之间的吉布斯自由能的差异来选择，这决定了由于两种材料之间的放热化学反应而产生的化学能。 第一层和第二层（12,14）的材料本身是高度热稳定的，但是当向单元（10）施加电压时，导致绝缘层（16）的局部击穿产生热点（18 ），其在第一和第二层（12,14）之间引起放热化学反应。 放热反应产生足够的热量（20）以在电池上产生短路并因此降低其电阻。
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公开(公告)号：US20100103751A1
公开(公告)日：2010-04-29
申请号：US11813862
申请日：2006-01-05
CPC分类号： G11C7/14
摘要： A circuit comprises an array of memory cells (10). A plurality of sensing circuits (20), are coupled to the output (14) of respective memory cells (10), for comparing the output signal of the respective one of the memory cells (10) with a reference signal to form a data signal from the output signal from the respective one of the memory cells (10). A reference generator circuit (24, 26) forms the reference signal from a sum wherein each respective one of the memory cells (10) of the addressed group contributes a contribution that is a function of the output signal of the respective one of the memory cells (10). The contributions are equalized for output signal values at more than a saturating distance above the reference signal, and the contributions are equalized for output signal values at more than the saturating distance below the reference signal. In case of storage of multi-level data in the cells the distances from the central level to the saturation levels above and below the reference level are mutually different, with a ratio that corresponds to a ratio of the counts of cells that have been programmed to respective levels.
摘要翻译： 电路包括存储器单元阵列（10）。 多个感测电路（20）耦合到相应存储单元（10）的输出（14），用于将存储单元（10）中的相应一个的输出信号与参考信号进行比较以形成数据信号 来自存储单元（10）中的相应一个的输出信号。 参考发生器电路（24,26）从一个和形成参考信号，其中寻址组的每个存储单元（10）中的每个相应的一个贡献作为存储单元的相应一个的输出信号的函数 （10）。 在超过参考信号的饱和距离上的输出信号值的贡献相等，并且在超过参考信号以下的饱和距离处的输出信号值的贡献相等。 在单元格中存储多级数据的情况下，从基准电平以上和低于基准电平的中心电平到饱和电平的距离是相互不同的，其比率对应于已经被编程的单元计数的比率 各级别。
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公开(公告)号：US20140005578A1
公开(公告)日：2014-01-02
申请号：US13125813
申请日：2009-10-23
申请人： Pierre H. Woerlee , Igor Wilhelmus Franciscus Paulussen , Frank Titus Marie Jaartsveld , Shervin Ayati , Thomas Jan De Hoog
发明人： Pierre H. Woerlee , Igor Wilhelmus Franciscus Paulussen , Frank Titus Marie Jaartsveld , Shervin Ayati , Thomas Jan De Hoog
IPC分类号： A61H31/00
CPC分类号： A61H31/006 , A61H31/004 , A61H2201/1207 , A61H2201/149 , A61H2203/0456 , A61H2205/084
摘要： This invention relates to an automated cardiopulmonary resuscitation device for cyclically compressing a patient's chest. The CPR device comprises a front structure (43) with a first and a second movable unit (44 a, b) arranged to move back and forth along said front structure; a back support (41) for positioning behind the patient's back arranged to keep the front structure in a fixed position relative to the patient's back; a chest pad (46); two arms (45 a, b) each rotatably coupled 5 to the chest pad with one end and each being rotatably coupled to a respective one of the first and the second movable units; and driving means (47,48,51,52) arranged for, when in operation, driving the first and the second movable units back and forth in opposite directions such that the chest pad cyclically compresses the patient's chest.
摘要翻译： 本发明涉及一种循环压缩患者胸部的自动化心肺复苏装置。 CPR装置包括：前结构（43），其具有布置成沿着所述前部结构前后移动的第一和第二可移动单元（44a，b）; 背部支撑件（41），用于定位在患者背部后面，布置成将前部结构保持在相对于患者背部的固定位置; 胸垫（46）; 两个臂（45a，b）各自可旋转地联接到胸垫上，一端并且每个可旋转地联接到第一和第二可移动单元中的相应一个; 以及驱动装置（47,48,51,52），其布置成在操作时沿相反方向来回驱动第一和第二可移动单元，使得胸垫周期性地压缩患者的胸部。
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公开(公告)号：US20110166490A1
公开(公告)日：2011-07-07
申请号：US12997897
申请日：2009-06-19
IPC分类号： A61H31/00
CPC分类号： A61H31/004 , A61H2201/018
摘要： The invention relates to an apparatus and a method for automated Cardio Pulmonary Resuscitation. The apparatus comprises a chest compression actuator, an actuator driver that supplies time-varying drive signals to the chest compression actuator in dependence of operating parameters of the actuator driver, a physiological parameter sensor supplying measured values of a physiological parameter related to the function of the chest compression actuator, and an adaptive control for the operating parameters of the actuator driver. The operating parameters determining a dynamic behavior of a system comprising the chest compression actuator and a chest of a patient.
摘要翻译： 本发明涉及一种自动心肺复苏术的装置和方法。 该装置包括胸部按压致动器，致动器驱动器，其根据致动器驱动器的操作参数向胸部按压致动器提供时变驱动信号;生理参数传感器，其提供与该功能相关的生理参数的测量值 胸部按压致动器，以及用于执行器驱动器的操作参数的自适应控制。 操作参数确定包括胸部按压致动器和患者胸部的系统的动态行为。
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6.发明授权Manufacture of a semiconductor device with a MOS transistor having an LDD structure using SiGe spacers 失效具有使用SiGe间隔物的具有LDD结构的MOS晶体管的半导体器件的制造公开(公告)号：US06255183B1
公开(公告)日：2001-07-03
申请号：US09064207
申请日：1998-04-22
IPC分类号： H01L21336
CPC分类号： H01L29/6659 , H01L21/2254 , H01L21/28247 , H01L21/823864 , H01L29/665 , Y10S438/923
摘要： A method of manufacturing a semiconductor device with a MOS transistor having an LDD structure. A gate dielectric (6) and a gate electrode (7, 8) are formed on a surface (5) of a silicon substrate (1). The surface adjacent the gate electrode is then exposed, and a layer of semiconductor material (10) is formed on an edge (9) of the surface adjoining the gate electrode. Ions (13, 14) are subsequently implated, with the gate electrode and the layer of semiconductor material acting as a mask. Finally, a heat treatment is carried out whereby a source zone (16, 17) and a drain zone (18, 19) are formed through activation of the implanted ions and through diffusion of atoms of a dopant from the layer of semiconductor material. The portions (b) of these zones formed by diffusion are weakly doped here and lie between the more strongly doped portions (a) formed through activation of implanted ions and the channel zone (20, 21). An LDD structure has thus been formed. In the method, a layer of semiconductor material formed by Si1-xGex, 0.1
摘要翻译： 一种制造具有LDD结构的MOS晶体管的半导体器件的方法。 在硅衬底（1）的表面（5）上形成栅电介质（6）和栅电极（7,8）。 然后暴露与栅电极相邻的表面，并且在与栅电极相邻的表面的边缘（9）上形成一层半导体材料（10）。 随后，栅极电极和半导体材料层用作掩模，随后引入离子（13,14）。 最后，进行热处理，由此通过激活注入的离子并且通过从半导体材料层扩散掺杂剂的原子而形成源极区（16,17）和漏极区（18,19）。 这些由扩散形成的这些区域的部分（b）在这里是弱掺杂的，位于通过激活注入的离子和沟道区（20,21）形成的更强的掺杂部分（a）之间。 因此形成了LDD结构。 在该方法中，在与栅电极相邻的边缘上设置由Si1-xGex形成的半导体材料层，0.1
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公开(公告)号：US4590093A
公开(公告)日：1986-05-20
申请号：US658108
申请日：1984-10-05
IPC分类号： H01L21/3205 , H01L21/02 , H01L21/033 , H01L21/266 , H01L21/28 , H01L21/3213 , H01L21/336 , H01L21/339 , H01L23/52
CPC分类号： H01L28/40 , H01L21/0337 , H01L21/266 , H01L21/2815 , H01L21/32139 , H01L29/66575 , H01L29/66954 , H01L2924/0002 , Y10S438/942 , Y10S438/947
摘要： A method of providing narrow conductor tracks of metal silicide is provided. According to this technique, a pattern of polycrystalline silicon covered by a protective layer is converted along the edges into the silicide by covering the device with a metal. The edges are then silicidized laterally over a distance of 20 to 500 nm. The remaining silicon is selectively removed, and the tracks obtained can serve as conductor masks, such as, for example, a plate of a capacitor.
摘要翻译： 提供了提供金属硅化物的窄导体轨迹的方法。 根据该技术，通过用金属覆盖器件，通过保护层覆盖的多晶硅的图案沿着边缘被转换成硅化物。 然后边缘在20至500nm的距离上横向硅化。 剩余的硅被选择性地去除，并且所获得的轨道可以用作导体掩模，例如电容器的板。
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公开(公告)号：US20110092864A1
公开(公告)日：2011-04-21
申请号：US12809112
申请日：2008-12-15
IPC分类号： A61H31/00
CPC分类号： A61H31/00 , A61H31/006 , A61H2201/5007 , A61H2201/5061 , A61H2201/5064 , A61H2201/5069 , A61H2201/5084
摘要： A method for applying a plurality of compressive forces to a thorax of a patient, measuring a displacement corresponding to each of the plurality of compressive forces, and determining properties of the thorax based on the compressive forces and the displacement. A system having a force applying device applying compressive forces to a thorax of a patient, a measurement device measuring a displacement of the thorax corresponding to each of the compressive forces, and a control device determining properties of the thorax based on the displacements of the thorax corresponding to each of the compressive forces.
摘要翻译： 一种用于将多个压缩力施加到患者胸部的方法，测量与所述多个压缩力中的每一个相对应的位移，以及基于所述压缩力和位移确定所述胸部的性质。 一种具有向患者胸部施加压力的施力装置的系统，测量与每个压缩力对应的胸部位移的测量装置，以及基于胸部位移确定胸廓特性的控制装置 对应于每个压缩力。
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公开(公告)号：US06368915B1
公开(公告)日：2002-04-09
申请号：US09527203
申请日：2000-03-16
IPC分类号： H01L21336
CPC分类号： H01L21/28273 , H01L29/42324 , H01L29/66825
摘要： In a method of manufacturing a semiconductor device comprising a non-volatile memory element, an active region 4 of a first conductivity type is defined at a surface 2 of a semiconductor body 1, and a patterned layer is applied, which patterned layer acts as a mask during the formation of a source zone 11 and a drain zone 12 of a second conductivity type in the semiconductor body 1. Then, a dielectric layer 14 is provided in a thickness which is sufficiently large to cover the patterned layer, which dielectric layer 14 is removed over part of its thickness by means of a material removing treatment until the patterned layer is exposed, which patterned layer is removed, thereby forming a recess in the dielectric layer 14. In this recess a first insulating layer is applied providing a floating gate dielectric 19, to which first insulating layer a first conductive layer is applied filling the recess in the dielectric layer 14, which first conductive layer is shaped into a floating gate 21 by means of masked etching. The floating gate 21 has a substantially flat surface portion 22 extending substantially parallel to the surface 2 of the semiconductor body 1 and sidewall portions 23 extending substantially perpendicularly to the surface 2 of the semiconductor body 1. In a next step, the floating gate 21 is covered with a second insulating layer providing an inter-gate dielectric 25, to which second insulating layer a second conductive layer is applied, which is shaped into an overlapping control gate 27. The control gate 27 is capacitively coupled to the substantially flat surface portion 22 of the floating gate 21 and to at least the sidewall portions 23 of the floating gate 21 situated adjacent to the source zone 11 and the drain zone 12 of the memory element.
摘要翻译： 在制造包括非易失性存储元件的半导体器件的方法中，第一导电类型的有源区4限定在半导体本体1的表面2，并且施加图案化层，该图案层用作 在半导体本体1中形成第二导电类型的源极区11和漏极区12期间形成掩模。然后，提供足够大以覆盖图案化层的厚度的电介质层14，该电介质层14 通过材料去除处理去除其厚度的一部分，直到图案化层被暴露，去除图案层，从而在电介质层14中形成凹陷。在该凹槽中，施加第一绝缘层，提供浮动栅极 电介质19，第一绝缘层施加第一导电层，填充介电层14中的凹部，该第一导电层被成形为浮动栅极21 通过掩模蚀刻。 浮动栅极21具有基本上平行于半导体本体1的表面2延伸的基本上平坦的表面部分22，以及基本上垂直于半导体本体1的表面2延伸的侧壁部分23.在下一步骤中，浮动栅极21是 覆盖有提供栅极间电介质25的第二绝缘层，施加第二绝缘层的第二导电层被成形为重叠的控制栅极27.控制栅极27电容耦合到基本平坦的表面部分22 和至少位于与存储元件的源极区11和漏极区12相邻的浮动栅极21的侧壁部分23。
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10.发明授权Semiconductor device provided having a programmable element with a high-conductivity buried contact region 失效提供具有可编程元件的半导体器件具有高导电性掩埋接触区域
公开(公告)号：US5502326A
公开(公告)日：1996-03-26
申请号：US381002
申请日：1995-01-25
IPC分类号： H01L27/10 , G11C17/16 , H01L21/8246 , H01L23/525 , H01L27/102 , H01L27/112 , H01L29/00 , H01L27/095
CPC分类号： G11C17/16 , H01L23/5252 , H01L2924/0002 , Y10S257/91
摘要： A semiconductor device includes a programmable element having a doped semiconductor region (4) and a conductor region (6) which are separated from one another by at least a portion of an insulating layer (5). The conductor region (6) is of a material suitable for forming a rectifying junction (8) with the material of the semiconductor region (4). To achieve a comparatively high conductivity connection to the semiconductor region (4), the element is further provided with a contact region (3) which has a comparatively low electrical resistance compared with the semiconductor region (4). The contact region (3) is provided at a side of the semiconductor region (4) remote from the insulating layer (5) and is separated from the insulating layer (5) by the semiconductor region (4). Both the semiconductor region (4) and the contact region (5) are laterally bounded by an isolating region (7) at opposing sides. The invention thus offers a device provided with a programmable element of a substantially more compact structure than a comparable conventional programmable element.
摘要翻译： 半导体器件包括具有掺杂半导体区域（4）的可编程元件和通过绝缘层（5）的至少一部分彼此分离的导体区域（6）。 导体区域（6）是适于与半导体区域（4）的材料形成整流结（8）的材料。 为了实现与半导体区域（4）的较高的导电性连接，元件还具有与半导体区域（4）相比具有相对低的电阻的接触区域（3）。 接触区域（3）设置在远离绝缘层（5）的半导体区域（4）的一侧，并且通过半导体区域（4）与绝缘层（5）分离。 半导体区域（4）和接触区域（5）都由相对侧的隔离区域（7）横向界定。 因此，本发明提供了一种具有比可比较的常规可编程元件基本上更紧凑结构的可编程元件的装置。
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