Water-Soluble Or Water-Swellable Polymers On The Basis Of Salts Of Acryloyldimethyltaurine Acid Or The Derivatives Thereof, The Production Thereof And The Use Thereof As Thickener, Stabilizer And Consistency Agents
    8.
    发明申请
    Water-Soluble Or Water-Swellable Polymers On The Basis Of Salts Of Acryloyldimethyltaurine Acid Or The Derivatives Thereof, The Production Thereof And The Use Thereof As Thickener, Stabilizer And Consistency Agents 失效
    水溶性或水溶性聚合物在丙烯酰基二甲基牛磺酸或其衍生物的基础上,其生产及其用途作为增稠剂,稳定剂和稠度剂

    公开(公告)号:US20100278763A1

    公开(公告)日:2010-11-04

    申请号:US12747727

    申请日:2008-12-16

    摘要: Polymers are described comprising a) one or more of the recurring structural units of the formula (1) where R1 is hydrogen, methyl or ethyl and A is C1-C8 alkylene, and Q+ is H+, NH4+, Li+, Na+, K+, ½Ca++, ½ Mg++, ½ Zn++ or ⅓ Al+++, and the neutralization degree of the structural units of formula (1) is 50 to 100 mol-%, and b) one or more of the recurring structural units of the formula (2) where R1 and A are R1 and A from formula (1) and X+ is [HNR5R6R7]+, where R5, R6 and R7 can independently from each other be hydrogen, a linear or branched alkyl group with 1 to 22 carbon atoms, a linear or branched, simple or polyunsaturated alkenylene group with 2 to 22 carbon atoms, a C6-C22-alkylamidopropyl group, a linear monohydroxyalkyl group with 2 to 10 carbon atoms or a linear or branched dihydroxyalkyl group with 3 to 10 carbon atoms, and wherein at least one of the groups R5, R6 and R7 is not hydrogen, with the proviso that the molar ratio of the structural units of formula (1), where Q+ is NH4+, Li+, Na+, K+, Ca++, Mg++, Zn++ or Al+++, to the structural units of formula (2) is 97:3 to 55:45 and the formation concentration (CMC)

    摘要翻译: 描述了包含a)一种或多种式(1)的重复结构单元的聚合物,其中R1是氢,甲基或乙基,A是C1-C8亚烷基,Q +是H +,NH4 +,Li +,Na +,K +,½Ca++ ,½Mg ++,½Zn ++或⅓Al+++,式(1)的结构单元的中和度为50至100mol%,和b)一种或多种式(2)的重复结构单元,其中R 1 并且A为式(1)中的R 1和A,X +为[HNR 5 R 6 R 7] +,其中R 5,R 6和R 7可彼此独立地为氢,具有1至22个碳原子的直链或支链烷基,直链或支链 具有2至22个碳原子的简单或多不饱和亚烯基,C 6 -C 22烷基酰胺基丙基,具有2至10个碳原子的直链单羟基烷基或具有3至10个碳原子的直链或支链二羟基烷基,并且其中至少一个 基团R 5,R 6和R 7不是氢,条件是式(1)的结构单元的摩尔比, 对于式(2)的结构单元,Q +为NH 4 +,Li +,Na +,K +,Ca ++,Mg ++,Zn ++或Al +++,为97:3至55:45,形成浓度(CMC)<15g / l和c )由具有至少两个烯属双键的单体获得的0至8,优选0.01至5重量%的交联结构单元。 聚合物例如以化妆品,皮肤病学和药物组合物中的增稠剂的有利方式是合适的。

    SUBSTRATES FOR III-NITRIDE EPITAXY
    10.
    发明申请

    公开(公告)号:US20190390365A1

    公开(公告)日:2019-12-26

    申请号:US16448178

    申请日:2019-06-21

    IPC分类号: C30B25/18 H01L21/02 C30B29/40

    摘要: A wafer suitable for epitaxial growth of gallium nitride (GaN) in a Metal Oxide Chemical Vapor Deposition (MOCVD) process. The wafer includes a silicon substrate having a front side and a back side and an edge extending between the front side and the back side, the edge including a front bevel surface connected to the front side and a back bevel surface connected to the back side, wherein the silicon substrate comprises an oxygen denuded silicon layer surrounding a core. The wafer further includes a protection layer being a thermally grown silicon oxide (SiO2) layer substantially covering the front bevel surface and the back bevel surface of the edge, while leaving at least a central region of the front side of the silicon substrate exposed, for preventing meltback during the MOCVD process.