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公开(公告)号：US20110271899A1
公开(公告)日：2011-11-10
申请号：US13037789
申请日：2011-03-01
CPC分类号： C30B35/00 , C30B9/00 , C30B11/00 , C30B15/00 , C30B15/002 , C30B15/06 , C30B15/22 , C30B15/24 , C30B15/34 , C30B28/10 , C30B29/06 , C30B29/52 , C30B29/64 , Y10T117/1048 , Y10T117/1092
摘要： In one embodiment, a sheet production apparatus comprises a vessel configured to hold a melt of a material. A cooling plate is disposed proximate the melt and is configured to form a sheet of the material on the melt. A first gas jet is configured to direct a gas toward an edge of the vessel. A sheet of a material is translated horizontally on a surface of the melt and the sheet is removed from the melt. The first gas jet may be directed at the meniscus and may stabilize this meniscus or increase local pressure within the meniscus.
摘要翻译： 在一个实施例中，片材生产设备包括构造成容纳材料的熔体的容器。 冷却板靠近熔体设置并且被配置成在熔体上形成材料片。 第一气体喷射器构造成将气体引向容器的边缘。 一片材料在熔体的表面上水平地平移，并且片材从熔体中移除。 第一气体射流可以指向弯月面并且可以稳定该弯液面或增加弯液面内的局部压力。
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公开(公告)号：US08685162B2
公开(公告)日：2014-04-01
申请号：US13037789
申请日：2011-03-01
CPC分类号： C30B35/00 , C30B9/00 , C30B11/00 , C30B15/00 , C30B15/002 , C30B15/06 , C30B15/22 , C30B15/24 , C30B15/34 , C30B28/10 , C30B29/06 , C30B29/52 , C30B29/64 , Y10T117/1048 , Y10T117/1092
摘要： In one embodiment, a sheet production apparatus comprises a vessel configured to hold a melt of a material. A cooling plate is disposed proximate the melt and is configured to form a sheet of the material on the melt. A first gas jet is configured to direct a gas toward an edge of the vessel. A sheet of a material is translated horizontally on a surface of the melt and the sheet is removed from the melt. The first gas jet may be directed at the meniscus and may stabilize this meniscus or increase local pressure within the meniscus.
摘要翻译： 在一个实施例中，片材生产设备包括构造成容纳材料的熔体的容器。 冷却板靠近熔体设置并且被配置成在熔体上形成材料片。 第一气体喷射器构造成将气体引向容器的边缘。 一片材料在熔体的表面上水平地平移，并且片材从熔体中移除。 第一气体射流可以指向弯月面并且可以稳定该弯液面或增加弯液面内的局部压力。
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公开(公告)号：US20110272115A1
公开(公告)日：2011-11-10
申请号：US13039808
申请日：2011-03-03
IPC分类号： B22D23/00
摘要： Embodiments related to sheet production are disclosed. A melt of a material is cooled to form a sheet of the material on the melt. The sheet is formed in a first region at a first sheet height. The sheet is translated to a second region such that it has a second sheet height higher than the first sheet height. The sheet is then separated from the melt. A seed wafer may be used to form the sheet.
摘要翻译： 公开了与片材生产相关的实施例。 将材料的熔体冷却以在熔体上形成材料片。 片材形成在第一片材高度的第一区域中。 片材被翻译成第二区域，使得其具有高于第一片材高度的第二片材高度。 然后将片材与熔体分离。 种子晶片可以用于形成片材。
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4.发明授权公开(公告)号：US08764901B2
公开(公告)日：2014-07-01
申请号：US13039808
申请日：2011-03-03
摘要： Embodiments related to sheet production are disclosed. A melt of a material is cooled to form a sheet of the material on the melt. The sheet is formed in a first region at a first sheet height. The sheet is translated to a second region such that it has a second sheet height higher than the first sheet height. The sheet is then separated from the melt. A seed wafer may be used to form the sheet.
摘要翻译： 公开了与片材生产相关的实施例。 将材料的熔体冷却以在熔体上形成材料片。 片材形成在第一片材高度的第一区域中。 片材被翻译成第二区域，使得其具有高于第一片材高度的第二片材高度。 然后将片材与熔体分离。 种子晶片可以用于形成片材。
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5.发明申请METHOD FOR ACHIEVING SUSTAINED ANISOTROPIC CRYSTAL GROWTH ON THE SURFACE OF A MELT 审中-公开在MELT表面上实现持续的各向异性晶体生长的方法公开(公告)号：US20130213296A1
公开(公告)日：2013-08-22
申请号：US13398874
申请日：2012-02-17
IPC分类号： C30B13/00
CPC分类号： C30B15/14 , C30B15/002 , C30B15/06 , C30B29/06
摘要： A method of horizontal ribbon growth from a melt includes forming a leading edge of the ribbon using radiative cooling on a surface of the melt, drawing the ribbon in a first direction along the surface of the melt, and removing heat radiated from the melt in a region adjacent the leading edge of the ribbon at a heat removal rate that is greater than a heat flow through the melt into the ribbon.
摘要翻译： 从熔体生长水平带的方法包括使用辐射冷却在熔体的表面上形成带的前缘，沿着熔体的表面沿着第一方向拉伸带，并且从熔体中散出的热量去除 该区域以比通过熔体进入带状物的热流大的除热速率与带的前缘相邻。
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6.发明授权公开(公告)号：US09970125B2
公开(公告)日：2018-05-15
申请号：US13398884
申请日：2012-02-17
CPC分类号： C30B15/14 , C30B15/06 , C30B29/06 , Y10T117/1008 , Y10T117/1044 , Y10T117/1048 , Y10T117/1068
摘要： An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface.
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7.发明申请METHOD FOR ACHIEVING SUSTAINED ANISOTROPIC CRYSTAL GROWTH ON THE SURFACE OF A SILICON MELT 有权在硅胶表面上实现持续的各向异性晶体生长的方法公开(公告)号：US20130213295A1
公开(公告)日：2013-08-22
申请号：US13398884
申请日：2012-02-17
CPC分类号： C30B15/14 , C30B15/06 , C30B29/06 , Y10T117/1008 , Y10T117/1044 , Y10T117/1048 , Y10T117/1068
摘要： An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface.
摘要翻译： 用于从熔体生长结晶片的设备包括冷块组件。 冷块组件可以包括冷块和围绕冷块并且处于相对于冷块的升高的温度的护罩，所述护罩限定沿着冷块的表面设置的开口，所述开口靠近熔融表面，所述熔体表面限定 冷区，其包括沿着冷块的第一方向的宽度，冷区域可操作以提供靠近冷块的熔体表面的区域的局部冷却。 该装置还可以包括：当冷块组件靠近熔体表面设置时，该结晶器被设置成在垂直于第一方向的方向上拉结晶种子。
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公开(公告)号：US08475591B2
公开(公告)日：2013-07-02
申请号：US12539125
申请日：2009-08-11
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B11/001 , C30B11/003 , C30B28/06 , C30B29/403 , C30B29/406 , C30B29/52 , C30B29/64 , H01L31/182 , Y02E10/546 , Y02P70/521 , Y10T117/1024
摘要： A method and apparatus for forming a sheet are disclosed. A melt is cooled and a sheet is formed on the melt. This sheet has a first thickness. The sheet is then thinned from the first thickness to a second thickness using, for example, a heater or the melt. The cooling may be configured to allow solutes to be trapped in a region of the sheet and this particular sheet may be thinned and the solutes removed. The melt may be, for example, silicon, silicon and germanium, gallium, or gallium nitride.
摘要翻译： 公开了一种用于形成片材的方法和装置。 将熔体冷却并在熔体上形成片材。 该片材具有第一厚度。 然后使用例如加热器或熔体将片材从第一厚度变薄至第二厚度。 冷却可以被配置为允许溶质被捕获在片材的区域中，并且该特定片材可以变薄并且去除溶质。 熔体可以是例如硅，硅和锗，镓或氮化镓。
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公开(公告)号：US20110271901A1
公开(公告)日：2011-11-10
申请号：US13187039
申请日：2011-07-20
CPC分类号： C30B11/003 , C30B11/001 , C30B28/06 , C30B29/02 , C30B29/06 , C30B29/08 , C30B29/403 , C30B29/64 , H01L31/182 , Y02E10/546 , Y02P70/521 , Y10S588/90 , Y10T117/1024 , Y10T117/1092
摘要： A melt of a material is cooled and a sheet of the material is formed in the melt. This sheet is transported, cut into at least one segment, and cooled in a cooling chamber. The material may be Si, Si and Ge, Ga, or GaN. The cooling is configured to prevent stress or strain to the segment. In one instance, the cooling chamber has gas cooling.
摘要翻译： 将材料的熔体冷却，并在熔体中形成一片材料。 将该片材运输，切割成至少一个片段，并在冷却室中冷却。 该材料可以是Si，Si和Ge，Ga或GaN。 冷却配置为防止应力或应变。 在一种情况下，冷却室具有气体冷却。
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公开(公告)号：US07855087B2
公开(公告)日：2010-12-21
申请号：US12403206
申请日：2009-03-12
申请人： Peter L. Kellerman , Frank Sinclair
发明人： Peter L. Kellerman , Frank Sinclair
IPC分类号： H01L21/00
摘要： This sheet production apparatus comprises a vessel defining a channel configured to hold a melt. The melt is configured to flow from a first point to a second point of the channel. A cooling plate is disposed proximate the melt and is configured to form a sheet on the melt. A spillway is disposed at the second point of the channel. This spillway is configured to separate the sheet from the melt.
摘要翻译： 该片材生产设备包括限定被配置为保持熔体的通道的容器。 熔体构造成从通道的第一点流到第二点。 冷却板靠近熔体设置并且被配置成在熔体上形成片材。 溢流道设置在通道的第二点。 该溢流道构造成将片材与熔体分离。
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