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公开(公告)号:US20060086976A1
公开(公告)日:2006-04-27
申请号:US10971337
申请日:2004-10-22
CPC分类号: H01L21/022 , H01L21/02118 , H01L21/02282 , H01L21/02348 , H01L21/312 , H01L27/1292 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/7869
摘要: Embodiments of methods, apparatuses, devices, and/or systems for forming a component having dielectric sub-layers are described.
摘要翻译: 描述了用于形成具有电介质子层的部件的方法,装置,装置和/或系统的实施例。
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公开(公告)号:US20070284701A1
公开(公告)日:2007-12-13
申请号:US11778201
申请日:2007-07-16
IPC分类号: H01L27/28 , H01L21/312
CPC分类号: H01L21/022 , H01L21/02118 , H01L21/02282 , H01L21/02348 , H01L21/312 , H01L27/1292 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/7869
摘要: Embodiments of methods, apparatuses, devices, and/or systems for forming a component having dielectric sub-layers are described.
摘要翻译: 描述了用于形成具有电介质子层的部件的方法,装置,装置和/或系统的实施例。
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公开(公告)号:US07265063B2
公开(公告)日:2007-09-04
申请号:US10971337
申请日:2004-10-22
IPC分类号: H01L27/28 , H01L21/312 , H01L21/47
CPC分类号: H01L21/022 , H01L21/02118 , H01L21/02282 , H01L21/02348 , H01L21/312 , H01L27/1292 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/7869
摘要: Embodiments of methods, apparatuses, devices, and/or systems for forming a component having dielectric sub-layers are described.
摘要翻译: 描述了用于形成具有电介质子层的部件的方法,装置,装置和/或系统的实施例。
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公开(公告)号:US08143706B2
公开(公告)日:2012-03-27
申请号:US11778201
申请日:2007-07-16
IPC分类号: H01L27/28 , H01L21/312 , H01L21/47
CPC分类号: H01L21/022 , H01L21/02118 , H01L21/02282 , H01L21/02348 , H01L21/312 , H01L27/1292 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/7869
摘要: Embodiments of methods, apparatuses, devices, and/or systems for forming a component having dielectric sub-layers are described.
摘要翻译: 描述了用于形成具有电介质子层的部件的方法,装置,装置和/或系统的实施例。
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5.Method of forming a solution processed transistor having a multilayer dielectric 审中-公开
标题翻译: 形成具有多层电介质的溶液处理晶体管的方法公开(公告)号:US20060088962A1
公开(公告)日:2006-04-27
申请号:US10972229
申请日:2004-10-22
申请人: Gregory Herman , Peter Mardilovich , Randy Hoffman , Laura Kramer , Kurt Ulmer
发明人: Gregory Herman , Peter Mardilovich , Randy Hoffman , Laura Kramer , Kurt Ulmer
IPC分类号: H01L21/00
CPC分类号: H01L21/02282 , H01L21/02123 , H01L21/02172 , H01L21/022 , H01L21/316 , H01L28/56 , H01L29/4908
摘要: Embodiments of methods, apparatuses, devices, and/or systems for forming a solution processed transistor having a multilayer dielectric are described.
摘要翻译: 描述了用于形成具有多层电介质的溶液处理晶体管的方法,装置,器件和/或系统的实施例。
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公开(公告)号:US20060094168A1
公开(公告)日:2006-05-04
申请号:US10977068
申请日:2004-10-29
申请人: Randy Hoffman , Peter Mardilovich , David Punsalan
发明人: Randy Hoffman , Peter Mardilovich , David Punsalan
CPC分类号: H01L29/7869 , H01L29/41733 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/66772
摘要: Embodiments of methods, apparatuses, devices, and/or systems for forming a thin film component are described.
摘要翻译: 描述了用于形成薄膜部件的方法,装置,装置和/或系统的实施例。
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公开(公告)号:US07799624B2
公开(公告)日:2010-09-21
申请号:US12104181
申请日:2008-04-16
申请人: Randy Hoffman , Peter Mardilovich , David Punsalan
发明人: Randy Hoffman , Peter Mardilovich , David Punsalan
IPC分类号: H01L21/84
CPC分类号: H01L29/7869 , H01L29/41733 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/66772
摘要: Embodiments of methods, apparatuses, devices, and/or systems for forming a thin film component are described.
摘要翻译: 描述了用于形成薄膜部件的方法,装置,装置和/或系统的实施例。
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公开(公告)号:US07374984B2
公开(公告)日:2008-05-20
申请号:US10977068
申请日:2004-10-29
申请人: Randy Hoffman , Peter Mardilovich , David Punsalan
发明人: Randy Hoffman , Peter Mardilovich , David Punsalan
IPC分类号: H01L21/84
CPC分类号: H01L29/7869 , H01L29/41733 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/66772
摘要: Embodiments of methods, apparatuses, devices, and/or systems for forming a thin film component are described.
摘要翻译: 描述了用于形成薄膜部件的方法,装置,装置和/或系统的实施例。
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公开(公告)号:US20080197414A1
公开(公告)日:2008-08-21
申请号:US12104181
申请日:2008-04-16
申请人: Randy Hoffman , Peter Mardilovich , David Punsalan
发明人: Randy Hoffman , Peter Mardilovich , David Punsalan
IPC分类号: H01L29/786 , H01L21/336
CPC分类号: H01L29/7869 , H01L29/41733 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/66772
摘要: Embodiments of methods, apparatuses, devices, and/or systems for forming a thin film component are described.
摘要翻译: 描述了用于形成薄膜部件的方法,装置,装置和/或系统的实施例。
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公开(公告)号:US07575979B2
公开(公告)日:2009-08-18
申请号:US10875034
申请日:2004-06-22
申请人: David Punsalan , Peter Mardilovich , Randy Hoffman
发明人: David Punsalan , Peter Mardilovich , Randy Hoffman
IPC分类号: H01L21/336 , H01L21/331
CPC分类号: H01L29/7869 , H01L21/0237 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/02601 , H01L21/02628 , H01L29/66969
摘要: A method includes forming a fluid including an inorganic semiconductor material, depositing a layer of said fluid on a substrate to form a film, and curing said film to form a porous semiconductor film.
摘要翻译: 一种方法包括形成包括无机半导体材料的流体,在基底上沉积所述流体层以形成膜,并固化所述膜以形成多孔半导体膜。
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