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    Semiconductor substrate processing chamber and substrate transfer chamber interfacial structure
    1.
    发明申请
    Semiconductor substrate processing chamber and substrate transfer chamber interfacial structure 审中-公开
    半导体衬底处理室和衬底转移室界面结构

    公开(公告)号：US20060027326A1

    公开(公告)日：2006-02-09

    申请号：US11208964

    申请日：2005-08-22

    申请人： Craig Carpenter ,  Ross Dando ,  Allen Mardian ,  Kevin Hamer ,  Raynald Cantin ,  Philip Campbell ,  Kimberly Tschepen ,  Randy Mercil

    发明人： Craig Carpenter ,  Ross Dando ,  Allen Mardian ,  Kevin Hamer ,  Raynald Cantin ,  Philip Campbell ,  Kimberly Tschepen ,  Randy Mercil

    IPC分类号： C23F1/00

    CPC分类号： H01L21/67126 ,  C23C16/4409 ,  C23C16/54 ,  Y10S414/139

    摘要： A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.

    摘要翻译： 半导体衬底处理器包括衬底传送室和与之连接的多个衬底处理室。 在至少一个处理室和传送室之间接收界面结构。 界面结构包括插入在一个处理室和传送室之间的基本上非金属的绝热材料块。 质量足够的体积以有效地减少从处理室到传送室的传热比否则不存在所述材料块的情况。 界面结构包括具有延伸穿过其中的基底通道的主体。 该通道包括其至少一部分基本上是金属的壁。 主体包括基本上非金属和热绝缘的壁的材料周边。 基本上非金属材料具有其中至少部分延伸的安装开口。

    Gas delivery system for deposition processes, and methods of using same
    3.
    发明申请
    Gas delivery system for deposition processes, and methods of using same 审中-公开
    用于沉积工艺的气体输送系统及其使用方法

    公开(公告)号：US20050011449A1

    公开(公告)日：2005-01-20

    申请号：US10916918

    申请日：2004-08-12

    申请人： Weimin Li ,  Neal Rueger ,  Li Li ,  Ross Dando ,  Kevin Hamer ,  Allen Mardian ,  Gurtej Sandhu

    发明人： Weimin Li ,  Neal Rueger ,  Li Li ,  Ross Dando ,  Kevin Hamer ,  Allen Mardian ,  Gurtej Sandhu

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  C23C16/00

    CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/507

    摘要： The present invention is generally directed to a novel gas delivery system for various deposition processes, and various methods of using same. In one illustrative embodiment, a deposition tool comprises a process chamber, a wafer stage adapted for holding a wafer positioned therein, and a gas delivery system positioned in the chamber above a position where a plasma will be generated in the chamber, wherein substantially all of a reactant gas is delivered into the chamber via the gas delivery system. In another illustrative embodiment, the reactant gas exiting the gas delivery system is directed so as to cover substantially all of an area defined by an upper surface of the wafer. In one illustrative embodiment, the method comprises positioning a wafer in a process chamber of a deposition tool, generating a plasma within the process chamber above the wafer, and forming a layer of material above the wafer by introducing substantially all of a reactant gas used to form the layer of material into the process chamber above the plasma via a gas delivery system positioned above the plasma. In another illustrative embodiment, the reactant gas exiting the gas delivery system is directed to cover substantially all of an area defined by an upper surface of the wafer.

    摘要翻译： 本发明一般涉及用于各种沉积工艺的新型气体输送系统及其使用方法。 在一个说明性实施例中，沉积工具包括处理室，适于保持位于其中的晶片的晶片台，以及定位在室中的气体输送系统，其位于室内将产生等离子体的位置，其中基本上全部 反应气体通过气体输送系统输送到室中。 在另一说明性实施例中，离开气体输送系统的反应物气体被引导以覆盖由晶片的上表面限定的基本上所有的区域。 在一个示例性实施例中，该方法包括将晶片定位在沉积工具的处理室中，在晶片上方的处理室内产生等离子体，并且通过将基本上所有的反应气体基本上引入到 通过位于等离子体上方的气体输送系统将材料层形成在等离子体上方的处理室中。 在另一示例性实施例中，离开气体输送系统的反应物气体被引导以覆盖由晶片的上表面限定的基本上所有的区域。

    Atomic layer deposition methods
    4.
    发明申请
    Atomic layer deposition methods 审中-公开
    原子层沉积法

    公开(公告)号：US20060251815A1

    公开(公告)日：2006-11-09

    申请号：US11484978

    申请日：2006-07-11

    申请人： Kevin Hamer ,  Philip Campbell ,  Danny Dynka ,  Matthew Meyers

    发明人： Kevin Hamer ,  Philip Campbell ,  Danny Dynka ,  Matthew Meyers

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45544 ,  C23C16/52

    摘要： The invention includes atomic layer deposition methods and apparatus. In one implementation, an atomic layer deposition apparatus includes a processing chamber, the chamber having an inlet and an outlet; a vacuum source in fluid communication with the outlet; a final valve moveable between an open position and a closed position and having an outlet in fluid communication with the inlet of the chamber and having an inlet; a dump line having an inlet in fluid communication with the inlet of the final valve, the dump line further having an outlet; a safety valve having an outlet in fluid communication with the inlet of the dump line and the inlet of the final valve, the safety valve having an inlet configured to be placed in fluid communication with a fluid source; and an automatic pressure controller in the dump line, between the inlet of the dump line and the outlet of the dump line, and configured to maintain pressure in the dump line at a predetermined pressure at least during a time when the final valve is in the closed position. Other methods and apparatus are provided.

    摘要翻译： 本发明包括原子层沉积方法和装置。 在一个实施方案中，原子层沉积设备包括处理室，所述室具有入口和出口; 与出口流体连通的真空源; 最终阀可在打开位置和关闭位置之间移动并且具有与所述室的入口流体连通并具有入口的出口; 倾倒线，其具有与最终阀的入口流体连通的入口，所述倾倒线还具有出口; 安全阀，其具有与所述倾倒管线的入口和所述最终阀的入口流体连通的出口，所述安全阀具有被配置为与流体源流体连通的入口; 以及卸料管线中的自动压力控制器，在转储管线的入口和倾倒管线的出口之间，并且构造成至少在最终阀门处于 关闭位置。 提供其他方法和装置。

    Atomic layer deposition methods and apparatus
    5.
    发明申请
    Atomic layer deposition methods and apparatus 审中-公开
    原子层沉积方法和装置

    公开(公告)号：US20060019029A1

    公开(公告)日：2006-01-26

    申请号：US10895482

    申请日：2004-07-20

    申请人： Kevin Hamer ,  Philip Campbell ,  Danny Dynka ,  Matthew Meyers

    发明人： Kevin Hamer ,  Philip Campbell ,  Danny Dynka ,  Matthew Meyers

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45544 ,  C23C16/52

    摘要： The invention includes atomic layer deposition methods and apparatus. In one implementation, an atomic layer deposition apparatus includes a processing chamber, the chamber having an inlet and an outlet; a vacuum source in fluid communication with the outlet; a final valve moveable between an open position and a closed position and having an outlet in fluid communication with the inlet of the chamber and having an inlet; a dump line having an inlet in fluid communication with the inlet of the final valve, the dump line further having an outlet; a safety valve having an outlet in fluid communication with the inlet of the dump line and the inlet of the final valve, the safety valve having an inlet configured to be placed in fluid communication with a fluid source; and an automatic pressure controller in the dump line, between the inlet of the dump line and the outlet of the dump line, and configured to maintain pressure in the dump line at a predetermined pressure at least during a time when the final valve is in the closed position. Other methods and apparatus are provided.

    摘要翻译： 本发明包括原子层沉积方法和装置。 在一个实施方案中，原子层沉积设备包括处理室，所述室具有入口和出口; 与出口流体连通的真空源; 最终阀可在打开位置和关闭位置之间移动并且具有与所述室的入口流体连通并具有入口的出口; 倾倒线，其具有与最终阀的入口流体连通的入口，所述倾倒线还具有出口; 安全阀，其具有与所述倾倒管线的入口和所述最终阀的入口流体连通的出口，所述安全阀具有被配置为与流体源流体连通的入口; 以及卸料管线中的自动压力控制器，在转储管线的入口和倾倒管线的出口之间，并且构造成至少在最终阀门处于 关闭位置。 提供其他方法和装置。

    Method and system for monitoring plasma using optical emission spectrometry
    7.
    发明申请
    Method and system for monitoring plasma using optical emission spectrometry 有权
    使用光发射光谱法监测等离子体的方法和系统

    公开(公告)号：US20060007425A1

    公开(公告)日：2006-01-12

    申请号：US11219540

    申请日：2005-09-01

    申请人： Neal Rueger ,  Kevin Hamer

    发明人： Neal Rueger ,  Kevin Hamer

    IPC分类号： G01N21/00 ,  G01J3/30

    CPC分类号： G01J3/443 ,  G01N21/68

    摘要： A method and system are presented for monitoring the optical emissions associated a plasma used in integrated circuit fabrication. The optical emissions may be processed by an optical spectrometer to obtain a spectrum. The spectrum may be analyzed to determine the presence of particular disassociated species which are indicative of the presence of a suitable plasma and which may be desired for a deposition, etching, or cleaning process.

    摘要翻译： 提出了一种用于监测与集成电路制造中使用的等离子体相关的光发射的方法和系统。 光发射可由光谱仪处理以获得光谱。 可以分析光谱以确定指示合适的等离子体的存在并且其可能对于沉积，蚀刻或清洁过程是期望的特定解离物种的存在。

    Polarizing beam splitter
    8.
    发明申请
    Polarizing beam splitter 有权
    极化分束器

    公开(公告)号：US20050001983A1

    公开(公告)日：2005-01-06

    申请号：US10637164

    申请日：2003-08-08

    申请人： Michael Weber ,  Charles Bruzzone ,  Peter Condo ,  Kevin Hamer ,  Timothy Hebrink ,  William Merrill

    发明人： Michael Weber ,  Charles Bruzzone ,  Peter Condo ,  Kevin Hamer ,  Timothy Hebrink ,  William Merrill

    IPC分类号： G02B5/04 ,  C08G63/12 ,  G02B5/30 ,  G02B27/28 ,  G03B21/00 ,  G03B21/14

    CPC分类号： G02B27/283 ,  Y10T428/24942

    摘要： The present invention provides a unique polarizing beam splitter (PBS) that is suitable for use in projection systems and displays. The PBS contains at least one prism having at least one major surface and having a refractive index of at least about 1.6 and a birefringent film disposed on the major surface of the prism. The birefringent film is a multi-layer film having at layers of at least a first material and a second material. After uniaxial stretching, the film exhibits a refractive index difference of less than about 0.15 units in the stretched direction.

    摘要翻译： 本发明提供了适用于投影系统和显示器的独特的偏振分束器（PBS）。 PBS包含至少一个具有至少一个主表面并具有至少约1.6的折射率的棱镜和设置在棱镜的主表面上的双折射膜。 双折射膜是具有至少第一材料和第二材料层的多层膜。 在单轴拉伸之后，膜在拉伸方向上的折射率差小于约0.15单位。