公开(公告)号：US20050133161A1

公开(公告)日：2005-06-23

申请号：US10933604

申请日：2004-09-02

申请人： Craig Carpenter ,  Allen Mardian ,  Ross Dando ,  Kimberly Tschepen ,  Garo Derderian

发明人： Craig Carpenter ,  Allen Mardian ,  Ross Dando ,  Kimberly Tschepen ,  Garo Derderian

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23F1/00

CPC分类号： C23C16/45544 ,  C23C16/45565

摘要： Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate. For example, the occluded passageway can be canted at an oblique angle relative to the first surface of the distributor plate so that gas flowing through the canted passageway changes direction as it passes through the distributor plate.

摘要翻译： 用于将材料气相沉积到微电子工件上的反应器，包括这种反应器的系统以及将材料沉积到微电子工件上的方法。 在一个实施方案中，用于气相沉积材料的反应器包括反应室和气体分配器。 反应室可以包括入口和出口。 气体分配器位于反应室中。 气体分配器具有联接到入口以接收气流的隔室和分布板，分配器板包括面向隔室的第一表面，面对反应室的第二表面和多个通道。 通道从第一表面延伸穿过分配器板到第二表面。 此外，至少一个通道具有穿过板的至少一部分闭塞的流动路径。 例如，封闭通道可以相对于分配器板的第一表面倾斜地倾斜，使得流过倾斜通道的气体在通过分配器板时改变方向。

公开(公告)号：US20050121088A1

公开(公告)日：2005-06-09

申请号：US11034015

申请日：2005-01-11

申请人： Ross Dando ,  Gurtej Sandhu ,  Allen Mardian

发明人： Ross Dando ,  Gurtej Sandhu ,  Allen Mardian

IPC分类号： C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C30B25/10 ,  C30B25/14 ,  F16K11/072

CPC分类号： C30B25/14 ,  C23C16/452 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45561 ,  C30B25/105 ,  Y10S118/90 ,  Y10T137/86839 ,  Y10T137/86863

摘要： The invention includes chemical vapor deposition methods, including atomic layer deposition, and valve assemblies for use with a reactive precursor in semiconductor processing. In one implementation, a chemical vapor deposition method includes positioning a semiconductor substrate within a chemical vapor deposition chamber. A first deposition precursor is fed to a remote plasma generation chamber positioned upstream of the deposition chamber, and a plasma is generated therefrom within the remote chamber and effective to form a first active deposition precursor species. The first species is flowed to the deposition chamber. During the flowing, flow of at least some of the first species is diverted from entering the deposition chamber while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. At some point, diverting is ceased while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. Other aspects and implementations are contemplated.

公开(公告)号：US20050011449A1

公开(公告)日：2005-01-20

申请号：US10916918

申请日：2004-08-12

申请人： Weimin Li ,  Neal Rueger ,  Li Li ,  Ross Dando ,  Kevin Hamer ,  Allen Mardian ,  Gurtej Sandhu

发明人： Weimin Li ,  Neal Rueger ,  Li Li ,  Ross Dando ,  Kevin Hamer ,  Allen Mardian ,  Gurtej Sandhu

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/507

摘要： The present invention is generally directed to a novel gas delivery system for various deposition processes, and various methods of using same. In one illustrative embodiment, a deposition tool comprises a process chamber, a wafer stage adapted for holding a wafer positioned therein, and a gas delivery system positioned in the chamber above a position where a plasma will be generated in the chamber, wherein substantially all of a reactant gas is delivered into the chamber via the gas delivery system. In another illustrative embodiment, the reactant gas exiting the gas delivery system is directed so as to cover substantially all of an area defined by an upper surface of the wafer. In one illustrative embodiment, the method comprises positioning a wafer in a process chamber of a deposition tool, generating a plasma within the process chamber above the wafer, and forming a layer of material above the wafer by introducing substantially all of a reactant gas used to form the layer of material into the process chamber above the plasma via a gas delivery system positioned above the plasma. In another illustrative embodiment, the reactant gas exiting the gas delivery system is directed to cover substantially all of an area defined by an upper surface of the wafer.

摘要翻译： 本发明一般涉及用于各种沉积工艺的新型气体输送系统及其使用方法。 在一个说明性实施例中，沉积工具包括处理室，适于保持位于其中的晶片的晶片台，以及定位在室中的气体输送系统，其位于室内将产生等离子体的位置，其中基本上全部 反应气体通过气体输送系统输送到室中。 在另一说明性实施例中，离开气体输送系统的反应物气体被引导以覆盖由晶片的上表面限定的基本上所有的区域。 在一个示例性实施例中，该方法包括将晶片定位在沉积工具的处理室中，在晶片上方的处理室内产生等离子体，并且通过将基本上所有的反应气体基本上引入到 通过位于等离子体上方的气体输送系统将材料层形成在等离子体上方的处理室中。 在另一示例性实施例中，离开气体输送系统的反应物气体被引导以覆盖由晶片的上表面限定的基本上所有的区域。

公开(公告)号：US20060218762A1

公开(公告)日：2006-10-05

申请号：US11421701

申请日：2006-06-01

申请人： Gurtej Sandhu ,  Sujit Sharan ,  Neal Rueger ,  Allen Mardian

发明人： Gurtej Sandhu ,  Sujit Sharan ,  Neal Rueger ,  Allen Mardian

IPC分类号： H01L21/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： G01F1/40 ,  G01F1/42 ,  G01P13/0006 ,  G01P13/0013 ,  G01P13/0033 ,  G05D7/0635 ,  Y10T137/0396 ,  Y10T137/7722 ,  Y10T137/775 ,  Y10T137/8242

摘要： Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to immediately or nearly immediately detect a flow failure. In one embodiment of the present invention, a novel MFC is provided. The MFC includes an orifice, a mass flow control gate, an actuator and a gate position sensor. The actuator moves the control gate to control flow through the orifice. The gate position sensor determines the gate position and/or gate movement to monitor flow and immediately or nearly immediately detect a flow failure. According to one embodiment of the present invention, the gate position sensor includes a transmitter for transmitting a signal and a receiver for receiving the signal such that the receiver provides an indication of the position of the gate based on the signal received. Other embodiments of the gate position sensor are described herein, as well as systems and methods that incorporate the novel MFC within a semiconductor manufacturing process.

公开(公告)号：US20050142291A1

公开(公告)日：2005-06-30

申请号：US11062571

申请日：2005-02-22

申请人： Ross Dando ,  Philip Campbell ,  Craig Carpenter ,  Allen Mardian

发明人： Ross Dando ,  Philip Campbell ,  Craig Carpenter ,  Allen Mardian

IPC分类号： C23C16/44 ,  C23C16/00

CPC分类号： C23C16/4405 ,  C23C16/4412

摘要： A chemical vapor deposition chamber has a vacuum exhaust line extending therefrom. Material is deposited over a first plurality of substrates within the deposition chamber under conditions effective to deposit effluent product over internal walls of the vacuum exhaust line. At least a portion of the vacuum exhaust line is isolated from the deposition chamber. While isolating, a cleaning fluid is flowed to the vacuum exhaust line effective to at least reduce thickness of the effluent product over the internal walls within the vacuum exhaust line from what it was prior to initiating said flowing. After said flowing, the portion of the vacuum exhaust line, and the deposition chamber are provided in fluid communication with one another and material is deposited over a second plurality of substrates within the deposition chamber under conditions effective to deposit effluent product over internal walls of the vacuum exhaust line.

摘要翻译： 化学气相沉积室具有从其延伸的真空排气管。 在有效地将流出物产物沉积在真空排气管的内壁上的条件下，材料沉积在沉积室内的第一组多个衬底上。 真空排气管线的至少一部分与沉积室隔离。 在分离时，清洁流体流到真空排气管线，有效地至少将真空排气管内的内壁上的流出物的厚度从起始流动之前的厚度减小到最小。 在所述流动之后，真空排气管线的部分和沉积室彼此流体连通地设置，并且在有效地将流出物产物沉积在沉积物的内壁上的条件下，在沉积室内的第二多个基板上沉积材料 真空排气管。

公开(公告)号：US20050028732A1

公开(公告)日：2005-02-10

申请号：US10912878

申请日：2004-08-06

申请人： Allen Mardian ,  Philip Campbell ,  Craig Carpenter ,  Randy Mercil ,  Sujit Sharan

发明人： Allen Mardian ,  Philip Campbell ,  Craig Carpenter ,  Randy Mercil ,  Sujit Sharan

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4401 ,  C23C16/45519

摘要： A chemical vapor deposition apparatus includes a deposition chamber defined at least in part by at least one of a chamber sidewall and a chamber base wall. A substrate holder is received within the chamber. At least one process chemical inlet to the deposition chamber is included. At least one of the chamber sidewall and chamber base wall includes a chamber surface having a plurality of purge gas inlets to the chamber therein. The purge gas inlets are separate from the at least one process chemical inlet. A purge gas inlet passageway is provided in fluid communication with the purge gas inlets. Further implementations, including deposition method implementations, are contemplated.

摘要翻译： 化学气相沉积装置包括至少部分地由室侧壁和室底壁中的至少一个限定的沉积室。 衬底保持器容纳在腔室内。 包括沉积室的至少一个工艺化学品入口。 腔室侧壁和腔室底壁中的至少一个包括腔室表面，其中具有多个吹扫气体入口。 吹扫气体入口与至少一个过程化学品入口分开。 吹扫气体入口通道设置成与净化气体入口流体连通。 考虑了包括沉积方法实现的其他实现。

公开(公告)号：US20060289969A1

公开(公告)日：2006-12-28

申请号：US11458989

申请日：2006-07-20

申请人： Ross Dando ,  Dan Gealy ,  Craig Carpenter ,  Philip Campbell ,  Allen Mardian

发明人： Ross Dando ,  Dan Gealy ,  Craig Carpenter ,  Philip Campbell ,  Allen Mardian

IPC分类号： H01L23/58

CPC分类号： H01L21/02271 ,  C23C16/45523 ,  C23C16/483 ,  H01L21/0228 ,  H01L21/3141 ,  H01L29/78

摘要： Electronic devices and systems are provided with material structured from irradiation of a gas precursor with electromagnetic energy at a frequency tuned to an absorption frequency of the gas precursor. The frequency of the electromagnetic energy may be selected to impart specific amounts of energy to a gas precursor at a specific frequency that provides point of use activation of the gas precursor.

摘要翻译： 电子设备和系统具有由气体前体辐射的材料构成，其电磁能量被调谐到气体前体的吸收频率。 可以选择电磁能量的频率，以提供气体前体的特定量的能量，其以提供气体前体的使用激活的特定频率。

公开(公告)号：US20060288937A1

公开(公告)日：2006-12-28

申请号：US11458984

申请日：2006-07-20

申请人： Ross Dando ,  Dan Gealy ,  Craig Carpenter ,  Philip Campbell ,  Allen Mardian

发明人： Ross Dando ,  Dan Gealy ,  Craig Carpenter ,  Philip Campbell ,  Allen Mardian

IPC分类号： C23C16/00

CPC分类号： H01L21/02271 ,  C23C16/45523 ,  C23C16/483 ,  H01L21/0228 ,  H01L21/3141 ,  H01L29/78

摘要： Apparatus is provided for a method of forming a film on a substrate that includes activating a gas precursor to deposit a material on the substrate by irradiating the gas precursor with electromagnetic energy at a frequency tuned to an absorption frequency of the gas precursor. The electromagnetic energy may be provided by an array of lasers. The frequency of the laser beam may be selected by switching from one laser in the array to another laser in the array. The laser array may include laser diodes, one or more tunable lasers, solid state lasers, or gas lasers. The frequency of the electromagnetic energy may be selected to impart specific amounts of energy to a gas precursor at a specific frequency that provides point of use activation of the gas precursor.

摘要翻译： 提供了一种在衬底上形成膜的方法，该方法包括通过用调谐到气体前体的吸收频率的频率的电磁能照射气体前体来激活气体前体以将材料沉积在衬底上。 电磁能可由激光阵列提供。 可以通过从阵列中的一个激光器切换到阵列中的另一个激光器来选择激光束的频率。 激光器阵列可以包括激光二极管，一个或多个可调激光器，固态激光器或气体激光器。 可以选择电磁能量的频率，以提供气体前体的特定量的能量，其以提供气体前体的使用激活的特定频率。

公开(公告)号：US20060219031A1

公开(公告)日：2006-10-05

申请号：US11421696

申请日：2006-06-01

申请人： Gurtej Sandhu ,  Sujit Sharan ,  Neal Rueger ,  Allen Mardian

发明人： Gurtej Sandhu ,  Sujit Sharan ,  Neal Rueger ,  Allen Mardian

IPC分类号： G01N19/00

CPC分类号： G01F1/40 ,  G01F1/42 ,  G01P13/0006 ,  G01P13/0013 ,  G01P13/0033 ,  G05D7/0635 ,  Y10T137/0396 ,  Y10T137/7722 ,  Y10T137/775 ,  Y10T137/8242

摘要： Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to immediately or nearly immediately detect a flow failure. In one embodiment of the present invention, a novel MFC is provided. The MFC includes an orifice, a mass flow control gate, an actuator and a gate position sensor. The actuator moves the control gate to control flow through the orifice. The gate position sensor determines the gate position and/or gate movement to monitor flow and immediately or nearly immediately detect a flow failure. According to one embodiment of the present invention, the gate position sensor includes a transmitter for transmitting a signal and a receiver for receiving the signal such that the receiver provides an indication of the position of the gate based on the signal received. Other embodiments of the gate position sensor are described herein, as well as systems and methods that incorporate the novel MFC within a semiconductor manufacturing process.

公开(公告)号：US20050087302A1

公开(公告)日：2005-04-28

申请号：US10683424

申请日：2003-10-10

申请人： Allen Mardian ,  Santiago Rodriguez

发明人： Allen Mardian ,  Santiago Rodriguez

IPC分类号： C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/511 ,  H01J37/32 ,  H01L21/00 ,  C23F1/00

CPC分类号： C23C16/45565 ,  C23C16/045 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32357 ,  H01L21/67069

摘要： A reactor comprising an energy source, a plasma unit positioned relative to the energy source, and a processing vessel connected to the plasma unit. The energy source has a generator that produces a plasma energy and a transmitter to transmit the plasma energy. The plasma unit has a first portion or transmissive portion through which the plasma energy can propagate, a second portion or distributor portion having a plurality of outlets, and a chamber in fluid communication with the plurality of outlets. The chamber is generally between or within the first and second portions. The plasma energy can pass through at least the first portion and into the chamber to create a plasma in the chamber. The second portion can also be transmissive or opaque to the plasma energy. The processing vessel includes a workpiece holder across from the outlets of the second portion of the plasma unit.

摘要翻译： 包括能量源，相对于能量源定位的等离子体单元的反应器和连接到等离子体单元的处理容器。 能量源具有产生等离子体能量的发生器和用于传输等离子体能量的发射器。 等离子体单元具有等离子体能量可以传播的第一部分或透射部分，具有多个出口的第二部分或分配器部分以及与多个出口流体连通的室。 腔室通常在第一和第二部分之间或之内。 等离子体能量可以至少穿过第一部分并进入腔室，以在腔室中产生等离子体。 第二部分也可以是等离子体能量的透射或不透明的。 处理容器包括跨过等离子体单元的第二部分的出口的工件保持器。