公开(公告)号：US20110083887A1

公开(公告)日：2011-04-14

申请号：US12575515

申请日：2009-10-08

申请人： Phillip Joe Brock ,  Blake W. Davis ,  Qinghuang Lin ,  Robert Dennis Miller ,  Alshakim Nelson ,  Jitendra Singh Rathore ,  Ratnam Sooriyakumaran

发明人： Phillip Joe Brock ,  Blake W. Davis ,  Qinghuang Lin ,  Robert Dennis Miller ,  Alshakim Nelson ,  Jitendra Singh Rathore ,  Ratnam Sooriyakumaran

IPC分类号： H05K1/03 ,  C08G77/14 ,  G03F7/004 ,  G03F7/20 ,  C07F7/08

CPC分类号： H01L23/5329 ,  C07F7/21 ,  C08G77/50 ,  C08L83/14 ,  G03F7/0045 ,  G03F7/0755 ,  G03F7/0757 ,  G03F7/40 ,  H01L21/02126 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/31 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76814 ,  H01L2221/1031 ,  H01L2924/0002 ,  Y10T428/31663 ,  H01L2924/00

摘要： Silsesquioxane polymers that cure to porous silsesquioxane polymers, silsesquioxane polymers that cure to porous silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers that cure to porous silsesquioxane polymers, structures containing porous silsesquioxane polymers and monomers and method of preparing monomers for silsesquioxane polymers that cure to porous silsesquioxane polymers.

摘要翻译： 固化到多孔倍半硅氧烷聚合物的倍半硅氧烷聚合物，在负色调可光图案化电介质配方中固化成多孔倍半硅氧烷聚合物的倍半硅氧烷聚合物，使用含有倍半硅氧烷聚合物的负色调可光图案化介电制剂形成结构的方法，其固化成多孔倍半硅氧烷聚合物， 多孔倍半硅氧烷聚合物和单体以及制备用于聚合多孔倍半硅氧烷聚合物的倍半硅氧烷聚合物的单体的方法。

公开(公告)号：US08389663B2

公开(公告)日：2013-03-05

申请号：US12575515

申请日：2009-10-08

申请人： Phillip Joe Brock ,  Qinghuang Lin ,  Robert Dennis Miller ,  Alshakim Nelson ,  Jitendra Singh Rathore ,  Ratnam Sooriyakumaran

发明人： Phillip Joe Brock ,  Qinghuang Lin ,  Robert Dennis Miller ,  Alshakim Nelson ,  Jitendra Singh Rathore ,  Ratnam Sooriyakumaran

IPC分类号： C08G77/04

CPC分类号： H01L23/5329 ,  C07F7/21 ,  C08G77/50 ,  C08L83/14 ,  G03F7/0045 ,  G03F7/0755 ,  G03F7/0757 ,  G03F7/40 ,  H01L21/02126 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/31 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76814 ,  H01L2221/1031 ,  H01L2924/0002 ,  Y10T428/31663 ,  H01L2924/00

摘要： Silsesquioxane polymers that cure to porous silsesquioxane polymers, silsesquioxane polymers that cure to porous silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers that cure to porous silsesquioxane polymers, structures containing porous silsesquioxane polymers and monomers and method of preparing monomers for silsesquioxane polymers that cure to porous silsesquioxane polymers.

公开(公告)号：US08426113B2

公开(公告)日：2013-04-23

申请号：US12856338

申请日：2010-08-13

申请人： Luisa Dominica Bozano ,  Blake W. Davis ,  Alshakim Nelson ,  Jitendra Singh Rathore ,  Linda Karin Sundberg

发明人： Luisa Dominica Bozano ,  Blake W. Davis ,  Alshakim Nelson ,  Jitendra Singh Rathore ,  Linda Karin Sundberg

IPC分类号： G03F7/075 ,  G03F7/038 ,  G03F7/20 ,  G03F7/30 ,  G03F7/40

CPC分类号： G03F7/0382 ,  G03F7/0757

摘要： The present invention provides chemically amplified silsesquioxane polymers for preparing masks using e-beam lithography. The silsesquioxane polymers have reactive sidechains that in the presence of an acid undergo acid catalyzed rearrangement to generate reactive functionalities that crosslink to form Si—O—Si bonds. The reactive side-chains comprise β- and γ-substituted alkyl groups bound to the silicon of the silsesquioxane polymer. The substituent of the β- and γ-substituted alkyl group is an electron withdrawing group. Resists generated with the chemically amplified silsesquioxane polymers of the present invention and imaged with e-beams have resolution of ≦60 nm line/space.

摘要翻译： 本发明提供用于使用电子束光刻制备掩模的化学放大倍半硅氧烷聚合物。 倍半硅氧烷聚合物具有在酸存在下经历酸催化重排以产生交联以形成Si-O-Si键的反应性官能团的反应性侧链。 反应性侧链包含与倍半硅氧烷聚合物的硅结合的β-取代的和取代的烷基。 β-和γ-取代的烷基的取代基是吸电子基团。 用本发明的化学放大倍半硅氧烷聚合物生成并用电子束成像的抗蚀剂具有@ 60nm线/空间的分辨率。

公开(公告)号：US20120040289A1

公开(公告)日：2012-02-16

申请号：US12856338

申请日：2010-08-13

申请人： Luisa Dominica Bozano ,  Blake W. Davis ,  Alshakim Nelson ,  Jitendra Singh Rathore ,  Linda Karin Sundberg

发明人： Luisa Dominica Bozano ,  Blake W. Davis ,  Alshakim Nelson ,  Jitendra Singh Rathore ,  Linda Karin Sundberg

IPC分类号： G03F7/20 ,  G03F7/004

CPC分类号： G03F7/0382 ,  G03F7/0757

摘要： The present invention provides chemically amplified silsesquioxane polymers for preparing masks using e-beam lithography. The silsesquioxane polymers have reactive sidechains that in the presence of an acid undergo acid catalyzed rearrangement to generate reactive functionalities that crosslink to form Si—O—Si bonds. The reactive side-chains comprise β- and γ-substituted alkyl groups bound to the silicon of the silsesquioxane polymer. The substituent of the β- and γ-substituted alkyl group is an electron withdrawing group. Resists generated with the chemically amplified silsesquioxane polymers of the present invention and imaged with e-beams have resolution of ≦60 nm line/space.

摘要翻译： 本发明提供用于使用电子束光刻制备掩模的化学放大倍半硅氧烷聚合物。 倍半硅氧烷聚合物具有在酸存在下经历酸催化重排以产生交联以形成Si-O-Si键的反应性官能团的反应性侧链。 反应性侧链包含与倍半硅氧烷聚合物的硅结合的β-和γ-取代的烷基。 取代基和取代基的取代基是吸电子基团。 用本发明的化学放大倍半硅氧烷聚合物产生的并用电子束成像的抗蚀剂具有60nm线/空间的分辨率。