公开(公告)号：US07786603B2

公开(公告)日：2010-08-31

申请号：US11262057

申请日：2005-10-28

申请人： Pierre-Marie J. Piel ,  Paul R. Hart ,  Jeffrey K. Jones

发明人： Pierre-Marie J. Piel ,  Paul R. Hart ,  Jeffrey K. Jones

IPC分类号： H01L23/48 ,  H01L23/34

CPC分类号： H01L25/16 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2223/6644 ,  H01L2224/48011 ,  H01L2224/4809 ,  H01L2224/48095 ,  H01L2224/49052 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/13055 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/2065 ,  H01L2924/20651 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： According to one aspect of the present invention, an electronic assembly is provided. The electronic assembly comprises a substrate with a lead connected thereto and first and second microelectronic components on the substrate. The first microelectronic component has first and second portions. A plurality of conductors interconnects the first microelectronic component and a selected one of the lead and the second microelectronic component. A first of the conductors contacts the first portion of the first microelectronic component and has a first inductance, and a second of the conductors contacts the second portion of the microelectronic component and has a second inductance. The second inductance is greater than the first inductance.

摘要翻译： 根据本发明的一个方面，提供一种电子组件。 电子组件包括具有与其连接的引线的基板和在基板上的第一和第二微电子部件。 第一微电子部件具有第一和第二部分。 多个导体将第一微电子部件和引线和第二微电子部件中的选定引线互连。 导体中的第一个接触第一微电子部件的第一部分并且具有第一电感，并且第二导体接触微电子部件的第二部分并且具有第二电感。 第二电感大于第一电感。

公开(公告)号：US06982483B2

公开(公告)日：2006-01-03

申请号：US10448548

申请日：2003-05-30

申请人： Robert J. McLaughlin ,  Alexander J. Elliott ,  Mall Mahalingam ,  Scott D. Marshall ,  Pierre-Marie J. Piel

发明人： Robert J. McLaughlin ,  Alexander J. Elliott ,  Mall Mahalingam ,  Scott D. Marshall ,  Pierre-Marie J. Piel

IPC分类号： H01L23/34

CPC分类号： H01L23/4334 ,  H01L23/3107 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6644 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/181 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： The disclosures made herein relate to RF power semiconductor devices. In accordance with one embodiment of the disclosures made herein, a RF power plastic semiconductor device comprises a semiconductor (RF) device, a Low Temperature Co-Fired Ceramic (LTCC) impedance matching structure electrically connected to the RF device and a plastic package body formed over the RF device and the impedance matching structure. The LTCC impedance matching structure comprises a metallized layer overlying a major body portion of the impedance matching structure and comprises a passivation layer on the metallized layer. The passivation layer enhances bond strength of a mold compound of the plastic package body to the metallized layer. Portions of the metallized layer are exposed through the passivation layer for enabling electrical interconnects to be formed between the LTCC impedance matching structure and the RF device. Preferably, RF power plastic packages in accordance with embodiments of the disclosures made herein exhibit terminal impedance of at least about twice that of conventional RF power plastic packages.

摘要翻译： 这里公开的内容涉及RF功率半导体器件。 根据本文所公开的一个实施例，RF功率塑料半导体器件包括半导体（RF）器件，电连接到RF器件的低温共烧陶瓷（LTCC）阻抗匹配结构和形成的塑料封装体 通过RF器件和阻抗匹配结构。 LTCC阻抗匹配结构包括覆盖阻抗匹配结构的主体部分的金属化层，并且在金属化层上包括钝化层。 钝化层增强塑料封装主体的模塑料与金属化层的粘合强度。 金属化层的一部分通过钝化层露出，以使得能够在LTCC阻抗匹配结构和RF器件之间形成电互连。 优选地，根据本文所公开的实施例的RF功率塑料封装件具有至少约为传统RF功率塑料封装的两倍的端子阻抗。

公开(公告)号：US10785833B2

公开(公告)日：2020-09-22

申请号：US14912124

申请日：2013-08-29

申请人： Pierre-Marie J. Piel ,  David P. Lester ,  Lionel Mongin

发明人： Pierre-Marie J. Piel ,  David P. Lester ,  Lionel Mongin

IPC分类号： H05B6/66 ,  H05B6/68 ,  H05B6/64

摘要： An embodiment of a microwave power generation module includes an amplifier arrangement, an impedance matching element, and a resonant element. The amplifier arrangement includes a transistor with a transistor input and a transistor output. The impedance matching element is formed from a planar conductive structure. The planar conductive structure has a proximal end and a distal end, and the proximal end is electrically coupled to the transistor output. The resonant element has a proximal end electrically coupled to the distal end of the planar conductive structure, and the resonant element is configured to radiate electromagnetic energy having a microwave frequency in a range of 800 megahertz (MHz) to 300 gigahertz (GHz). A combination of the impedance matching element and the resonant element is configured to perform an impedance transformation between an impedance of the transistor and an impedance of an air cavity.