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11 条记录 (耗时 0.032 秒)

    Method for removing extraneous matter by using fluorine-containing solution
    1.
    发明授权
    Method for removing extraneous matter by using fluorine-containing solution 失效
    使用含氟溶液除去外来物质的方法

    公开(公告)号：US06315834B1

    公开(公告)日：2001-11-13

    申请号：US09427201

    申请日：1999-10-25

    申请人： Ping-Chung Chung ,  Tsung-Lin Lu ,  Hunter Chung ,  Chin-Hsien Chen ,  Weng-Yi Chen ,  Jack Yao ,  Chienfeng Chen

    发明人： Ping-Chung Chung ,  Tsung-Lin Lu ,  Hunter Chung ,  Chin-Hsien Chen ,  Weng-Yi Chen ,  Jack Yao ,  Chienfeng Chen

    IPC分类号： C03C2300

    CPC分类号： C23C16/4407 ,  C23G1/24

    摘要： A method for removing extraneous matters from a stainless device is provided. The method includes the steps of (a) providing a container for holding a fluorine-containing neutral solution therein, (b) immersing said stainless device in said fluorine-containing neutral solution to remove said extraneous matters from said stainless device, and (c) heating and swirling said fluorine-containing solution. The fluorine-containing neutral solution is made from neutralizing hydrofluoric acid (HF) with ammonium hydroxide (NH4OH), neutralizing hydrofluoric acid (HF) with ammonium fluoride (NH4F), or dissolving ammonium acid fluoride (NH4F) in a deionized water (DIW).

    摘要翻译： 提供了从不锈钢装置中除去外来物质的方法。 该方法包括以下步骤：（a）在其中提供用于保持含氟中性溶液的容器，（b）将所述不锈钢装置浸入所述含氟中性溶液中以从所述不锈钢装置中除去所述外来物质;（c） 加热和旋转所述含氟溶液。 含氟中性溶液是用氢氧化铵（NH 4 OH）中和氢氟酸（HF），中和氢氟酸（HF）与氟化铵（NH4F）或将铵态氟化铵（NH4F）溶解在去离子水（DIW）中制成的， 。

    Wafer mapping apparatus
    2.
    发明授权
    Wafer mapping apparatus 失效
    晶圆测绘仪

    公开(公告)号：US06303939B1

    公开(公告)日：2001-10-16

    申请号：US09347619

    申请日：1999-07-02

    申请人： Ping-Chung Chung ,  Tsung-Lin Lu

    发明人： Ping-Chung Chung ,  Tsung-Lin Lu

    IPC分类号： G01N2186

    CPC分类号： H01L21/67265 ,  Y10S414/135

    摘要： A semiconductor wafer cassette mapper. A photo-detecting array is used as a receiver. During a mapping process, an accurate and complex driving system is not necessary. The invention provides a semiconductor wafer cassette mapper. A strip light source is used as an emitter and a photo-detecting array is used as a receiver for a semiconductor wafer cassette mapper. During the mapping process, the strip light source, the photo-detecting array and the wafer cassette do not need to move for scanning. The receiver obtains an information about all wafers in the wafer cassette by receiving all signals at one time, so that a mapping time is reduced. The invention provides another semiconductor wafer cassette mapper. A parallel scanning light source serves as an emitter and a photo-detecting array serves as a receiver of semiconductor wafer cassette mapper. During the mapping process, the parallel scanning light source moves quickly to scan the wafers in the wafer cassette. The method can reduce the mapping time.

    摘要翻译： 半导体晶片盒式映像器。 光检测阵列用作接收器。 在映射过程中，不需要精确和复杂的驱动系统。 本发明提供一种半导体晶片盒式贴图机。 使用带状光源作为发射极，并且光电检测阵列用作半导体晶片盒贴图器的接收器。 在映射处理期间，条形光源，光电检测阵列和晶片盒不需要移动用于扫描。 接收器通过同时接收所有信号来获得关于晶片盒中的所有晶片的信息，从而降低映射时间。 本发明提供了另一种半导体晶片盒式贴图器。 平行扫描光源用作发射极，光检测阵列用作半导体晶片盒贴图器的接收器。 在映射处理期间，并行扫描光源快速移动以扫描晶片盒中的晶片。 该方法可以减少映射时间。

    Exhaust gas treatment apparatus
    3.
    发明授权
    Exhaust gas treatment apparatus 失效
    废气处理设备

    公开(公告)号：US06217640B1

    公开(公告)日：2001-04-17

    申请号：US09370486

    申请日：1999-08-09

    申请人： Tsung-Lin Lu ,  Jing-Yi Huang ,  Ping-Chung Chung ,  Frank Chung

    发明人： Tsung-Lin Lu ,  Jing-Yi Huang ,  Ping-Chung Chung ,  Frank Chung

    IPC分类号： B01D4706

    CPC分类号： B01D46/0065 ,  B01D53/68 ,  B01D53/74 ,  B01D2257/204 ,  B08B9/00 ,  C23C16/4412 ,  Y02C20/30

    摘要： An exhaust gas treatment apparatus for treating exhaust gases generated in semiconductor manufacturing processes. It includes a main pipe, a U pipe, a discharge pipe and a tank. The main pipe has an inlet to receive exhaust gases, a heater surrounding the main pipe to heat the exhaust gases to form exhaust gas powder, a sprinkler to spray cooling water to cool the heated exhaust gases to form vapor and waste water and an outlet to discharge vapor and waste water into the U pipe. The U pipe has a first connector connecting with the main pipe and a second connector connecting with the discharging pipe. The tank is located below the U pipe under the first connector for receiving lump type exhaust gas powder scrapping from the inside wall of the main pipe. The U pipe will not be blocked by the lump type exhaust gas powder so that exhaust gas treatment efficiency won't be harmfully affected.

    摘要翻译： 一种用于处理在半导体制造工艺中产生的废气的废气处理装置。 它包括主管，U管，排水管和罐。 主管具有用于接收废气的入口，围绕主管的加热器以加热废气以形成废气粉末，喷洒器以喷射冷却水以冷却加热的废气以形成蒸气和废水，并将出口 将蒸汽和废水排放到U型管中。 U管具有与主管连接的第一连接器和与排出管连接的第二连接器。 该罐位于第一连接器下面的U型管下方，用于从主管的内壁接收块状废气粉末。 U型管不会被块状排气粉末堵塞，从而不会对废气处理效率产生有害影响。

    Method for improving the uniformity of wafer-to-wafer film thickness
    4.
    发明授权
    Method for improving the uniformity of wafer-to-wafer film thickness 有权
    提高晶片到晶片膜厚均匀性的方法

    公开(公告)号：US06218320B1

    公开(公告)日：2001-04-17

    申请号：US09222654

    申请日：1998-12-30

    申请人： Tsung-Lin Lu ,  Ping-Chung Chung ,  Yun-Sueng Liou ,  Yung-Chun Wen ,  Tsang-Jung Lin

    发明人： Tsung-Lin Lu ,  Ping-Chung Chung ,  Yun-Sueng Liou ,  Yung-Chun Wen ,  Tsang-Jung Lin

    IPC分类号： H01L2131

    CPC分类号： C23C16/45565 ,  C23C16/4557 ,  C23C16/5096 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/31612

    摘要： A method for improving the uniformity of wafer-to-wafer film thicknesses. Before depositing films, shower heads in a PECVD system is heated to production temperature to make the entire system (including the shower heads) reach a stable temperature in coordination with heating of a heater block. Subsequently, a gas source, output via the shower heads, is provided, and then a plasma of the gas source is generated to form a film on the wafer due to the temperatures of the shower heads remain constant during wafers deposition. Therefore, the problem of the uneven thicknesses of films among wafers is resolved. Moreover, if the heating of the shower heads by use of a plasma (which can also be used to heat the heater block) and the heater block is concurrently performed after the preventive maintenance (PM) or open chamber cleaning of the PECVD system, the heating time of the heater block can be further shortened.

    摘要翻译： 一种用于提高晶片到晶片膜厚度的均匀性的方法。 在沉积薄膜之前，将PECVD系统中的喷头加热至生产温度，以使整个系统（包括淋浴喷头）在与加热器块的加热协调的情况下达到稳定的温度。 随后，提供通过喷淋头输出的气体源，然后由于在晶片沉积期间喷淋头的温度保持恒定，产生气体源的等离子体以在晶片上形成膜。 因此，解决了晶片之间的膜的不均匀厚度的问题。 此外，如果在PECVD系统的预防性维护（PM）或开放室清洁之后，通过使用等离子体（其也可以用于加热加热器块）和加热器块的喷淋头的加热同时进行，则 加热器块的加热时间可以进一步缩短。

    Method of adjusting for parallel alignment between a shower head and a heater platform in a chamber used in integrated circuit fabrication
    5.
    发明授权
    Method of adjusting for parallel alignment between a shower head and a heater platform in a chamber used in integrated circuit fabrication 失效
    在用于集成电路制造的室中的淋浴头和加热器平台之间的平行对准的调节方法

    公开(公告)号：US06210754B1

    公开(公告)日：2001-04-03

    申请号：US09246754

    申请日：1999-02-08

    申请人： Tsung-Lin Lu ,  Ping-Chung Chung ,  Tso-Lung Lai

    发明人： Tsung-Lin Lu ,  Ping-Chung Chung ,  Tso-Lung Lai

    IPC分类号： C23C1600

    CPC分类号： C23C16/45565 ,  C23C16/4583 ,  H01L21/68

    摘要： A method is proposed for use in a chamber used in IC fabrication to adjust for parallel alignment between a shower head and a heater platform in the chamber, so that later the deposition process performed in the chamber can result in an evenly deposited layer on the wafer. This method is characterized by the provision of a plurality of displacement gauges between the shower head and the heater platform, with the heater platform being adjusted in such a manner as to allow all the distance readings from the displacement gauges to be substantially equal to a predetermined fixed value. This not only allows the shower head and the heater platform to be aligned and parallel to each other, but also allows them to be separated by a predetermined, fixed distance. The parallel alignment allows all deposition processes subsequently performed in the chamber to provide an evenly deposited layer on the wafer, and the fixed distance between the shower head and the heater platform allows the wafers fabricated from different chambers to be consistent in quality.

    摘要翻译： 提出了一种用于IC制造中使用的腔室中的方法，用于调节腔室中淋浴喷头和加热器平台之间的平行对准，使得稍后在腔室中执行的沉积工艺可导致在晶片上均匀沉积的层 。 该方法的特征在于在淋浴头和加热器平台之间设置多个位移量规，其中加热器平台被调节成允许来自位移计的所有距离读数基本上等于预定的 固定值。 这不仅允许淋浴头和加热器平台彼此对准并且平行，而且还允许它们以预定的固定距离分开。 平行对准允许随后在腔室中执行的所有沉积过程在晶片上提供均匀的沉积层，并且喷头和加热器平台之间的固定距离允许从不同腔室制造的晶片的质量一致。

    Casting apparatus
    7.
    发明授权
    Casting apparatus 有权
    铸造设备

    公开(公告)号：US09149392B2

    公开(公告)日：2015-10-06

    申请号：US14055258

    申请日：2013-10-16

    申请人： Bing-Tang Zhong ,  Ping-Chung Chung ,  Yueh-Lin Chung

    发明人： Bing-Tang Zhong ,  Ping-Chung Chung ,  Yueh-Lin Chung

    IPC分类号： A61F5/37 ,  A61B19/00 ,  A61F5/00 ,  A61F13/06 ,  A61L15/00 ,  A61F13/04 ,  A61F13/02 ,  A61F13/00 ,  A61F5/01

    CPC分类号： A61F13/041 ,  A61F5/00 ,  A61F5/01 ,  A61F13/00 ,  A61F13/02 ,  A61F13/0273 ,  A61F13/04

    摘要： In a casting apparatus for external skeletal and joint fixation, a plurality of articulated segments may comprise a plurality of cuboid members threaded on a continuous cord having distal ends connected to actuators. The cuboid members may be disposed between guide members threaded on the cord. Actuation of the actuators applies a tension force to the cord, thereby compressing the cuboid members together to form rigid cuboid segments and maintain the casting apparatus in a rigid configuration for skeletal and joint fixation.

    摘要翻译： 在用于外部骨骼和关节固定的铸造设备中，多个铰接段可以包括螺纹连接在连续绳索上的多个长方体构件，其远端连接到致动器。 长方体构件可以设置在螺纹穿过绳索的引导构件之间。 执行器致动器对绳索施加张力，从而将长方体构件压缩在一起以形成刚性长方体段，并将铸造装置保持在用于骨骼和关节固定的刚性构型中。

    Method and apparatus for removing high concentration ozone from a waste gas steam
    9.
    发明授权
    Method and apparatus for removing high concentration ozone from a waste gas steam 有权
    从废气蒸汽中除去高浓度臭氧的方法和装置

    公开(公告)号：US07572320B2

    公开(公告)日：2009-08-11

    申请号：US11215081

    申请日：2005-08-31

    申请人： Shaw-Yi Yan ,  Sheng-Jen Yu ,  Shou-Nan Li ,  Chang-Fu Hsu ,  Ping-Chung Chung

    发明人： Shaw-Yi Yan ,  Sheng-Jen Yu ,  Shou-Nan Li ,  Chang-Fu Hsu ,  Ping-Chung Chung

    IPC分类号： B01D53/14

    CPC分类号： B01D53/72 ,  B01D53/66 ,  B01D53/77 ,  B01D2251/61

    摘要： A method for removing high concentration ozone from a waste gas stream is disclosed, which includes the following steps: (1) providing an apparatus, which includes: a tank having an input port, an exhaust port and a packing, wherein the input port is near the bottom of the tank, the exhaust port is on the top of the tank, and the packing is contained in the tank; a liquid injection element for injecting reductant solution through the packing; and a storage vessel connecting to the liquid injection element; (2) transporting a gas into the tank through the input port for contacting the reductant solution; and (3) the gas exiting the reactor by way of the exhaust port.

    摘要翻译： 公开了一种从废气流中除去高浓度臭氧的方法，其包括以下步骤：（1）提供一种装置，其包括：具有输入端口，排气口和填料的罐，其中输入端口为 在罐底部附近，排气口位于罐的顶部，并且包装被包含在罐中; 用于通过包装注入还原剂溶液的液体注入元件; 以及连接到所述液体注入元件的储存容器; （2）通过输入端口将气体输送到储罐中以使还原剂溶液接触; 和（3）通过排气口离开反应器的气体。