公开(公告)号：US09018666B2

公开(公告)日：2015-04-28

申请号：US12728853

申请日：2010-03-22

申请人： Pun Jae Choi ,  Ki Yeol Park ,  Sang Bum Lee ,  Seon Young Myoung ,  Myong Soo Cho

发明人： Pun Jae Choi ,  Ki Yeol Park ,  Sang Bum Lee ,  Seon Young Myoung ,  Myong Soo Cho

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/20

CPC分类号： H01L33/382 ,  H01L33/20

摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.

摘要翻译： 提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。 根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。 第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。

公开(公告)号：US20080191215A1

公开(公告)日：2008-08-14

申请号：US12003886

申请日：2008-01-03

申请人： Pun Jae Choi ,  Ki Yeol Park ,  Sang Bum Lee ,  Seon Young Myoung ,  Myong Soo Cho

发明人： Pun Jae Choi ,  Ki Yeol Park ,  Sang Bum Lee ,  Seon Young Myoung ,  Myong Soo Cho

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L33/20

摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.

摘要翻译： 提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。 根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。 第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。

公开(公告)号：US08847266B2

公开(公告)日：2014-09-30

申请号：US12003886

申请日：2008-01-03

申请人： Pun Jae Choi ,  Ki Yeol Park ,  Sang Bum Lee ,  Seon Young Myoung ,  Myong Soo Cho

发明人： Pun Jae Choi ,  Ki Yeol Park ,  Sang Bum Lee ,  Seon Young Myoung ,  Myong Soo Cho

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/20

CPC分类号： H01L33/382 ,  H01L33/20

摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.

摘要翻译： 提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。 根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。 第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。

公开(公告)号：US20100171140A1

公开(公告)日：2010-07-08

申请号：US12728853

申请日：2010-03-22

申请人： Pun Jae CHOI ,  Ki Yeol Park ,  Sang Bum Lee ,  Seon Young Myoung ,  Myong Soo Cho

发明人： Pun Jae CHOI ,  Ki Yeol Park ,  Sang Bum Lee ,  Seon Young Myoung ,  Myong Soo Cho

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L33/20

摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.

摘要翻译： 提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。 根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。 第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。

公开(公告)号：US20100193828A1

公开(公告)日：2010-08-05

申请号：US12756824

申请日：2010-04-08

申请人： Pun Jae CHOI ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

发明人： Pun Jae CHOI ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

IPC分类号： H01L33/62

CPC分类号： H01L33/382 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/00

摘要： There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.

摘要翻译： 提供一种发光装置，其能够使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，实现与小面积电极的均匀电流扩散，并且以低成本，高可靠性和高质量实现批量生产 。 根据本发明的一个方面的发光器件包括在其一个表面上包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光层叠体和导电性基板。 这里，发光器件包括将发光层压分离成多个发光区域的阻挡单元，第一电极结构和第二电极结构。 第一电极结构包括接合单元，接触孔和将接合单元连接到接触孔的接线单元。

公开(公告)号：US07786498B2

公开(公告)日：2010-08-31

申请号：US12071980

申请日：2008-02-28

申请人： Pun Jae Choi ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

发明人： Pun Jae Choi ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/00

摘要： There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.

摘要翻译： 提供一种发光装置，其能够使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，实现与小面积电极的均匀电流扩散，并且以低成本，高可靠性和高质量实现批量生产 。 根据本发明的一个方面的发光器件包括在其一个表面上包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光层叠体和导电性基板。 这里，发光器件包括将发光层压分离成多个发光区域的阻挡单元，第一电极结构和第二电极结构。 第一电极结构包括接合单元，接触孔和将接合单元连接到接触孔的接线单元。

公开(公告)号：US20080237622A1

公开(公告)日：2008-10-02

申请号：US12071980

申请日：2008-02-28

申请人： Pun Jae Choi ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

发明人： Pun Jae Choi ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/00

摘要： There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.

摘要翻译： 提供一种发光装置，其能够使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，实现与小面积电极的均匀电流扩散，并且以低成本，高可靠性和高质量实现批量生产 。 根据本发明的一个方面的发光器件包括在其一个表面上包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光层叠体和导电性基板。 这里，发光器件包括将发光层压分离成多个发光区域的阻挡单元，第一电极结构和第二电极结构。 第一电极结构包括接合单元，接触孔和将接合单元连接到接触孔的接线单元。

公开(公告)号：US08063407B2

公开(公告)日：2011-11-22

申请号：US12756824

申请日：2010-04-08

申请人： Pun Jae Choi ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

发明人： Pun Jae Choi ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

IPC分类号： H01L33/62

CPC分类号： H01L33/382 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/00

摘要： There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.

摘要翻译： 提供一种发光装置，其能够使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，实现与小面积电极的均匀电流扩散，并且以低成本，高可靠性和高质量实现批量生产 。 根据本发明的一个方面的发光器件包括在其一个表面上包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光层叠体和导电性基板。 这里，发光器件包括将发光层压分离成多个发光区域的阻挡单元，第一电极结构和第二电极结构。 第一电极结构包括接合单元，接触孔和将接合单元连接到接触孔的接线单元。

公开(公告)号：US20080035951A1

公开(公告)日：2008-02-14

申请号：US11822185

申请日：2007-07-03

申请人： Hee Seok Park ,  Gil Han Park ,  Sang Duk Yoo ,  Young Min Park ,  Hak Hwan Kim ,  Seon Young Myoung ,  Sang Bum Lee ,  Ki Tae Park ,  Myoung Sik Jung ,  Kyeong Ik Min

发明人： Hee Seok Park ,  Gil Han Park ,  Sang Duk Yoo ,  Young Min Park ,  Hak Hwan Kim ,  Seon Young Myoung ,  Sang Bum Lee ,  Ki Tae Park ,  Myoung Sik Jung ,  Kyeong Ik Min

IPC分类号： H01L29/24 ,  H01L21/36 ,  H01L33/00

CPC分类号： C30B25/04 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/24

摘要： A method for selectively growing a nitride semiconductor, in which a mask is formed, with an opening formed therein, on a nitride semiconductor layer. A nitride semiconductor crystal is selectively grown on a portion of the nitride semiconductor layer exposed through the opening in the mask, the nitride semiconductor crystal shaped as a hexagonal pyramid and having crystal planes inclined with respect to a top surface of the nitride semiconductor. Here, the nitride semiconductor crystal has at least one intermediate stress-relieving area having crystal planes inclined at a greater angle than those of upper and lower areas of the nitride semiconductor crystal, the intermediate stress-relieving area relieving stress which occurs from continuity in the inclined crystal planes.

摘要翻译： 一种在氮化物半导体层上选择性地生长其中形成掩模的氮化物半导体，其中形成有开口的方法。 氮化物半导体晶体选择性地生长在通过掩模中的开口暴露的氮化物半导体层的一部分上，氮化物半导体晶体形状为六角锥，并具有相对于氮化物半导体的顶表面倾斜的晶面。 这里，氮化物半导体晶体具有至少一个具有比氮化物半导体晶体的上部和下部区域倾斜角度大的晶面的中间应力消除区域，由中间应力消除区域的连续性产生的中间应力消除面积减轻应力 斜晶面。

公开(公告)号：US08536026B2

公开(公告)日：2013-09-17

申请号：US11822185

申请日：2007-07-03

申请人： Hee Seok Park ,  Gil Han Park ,  Sang Duk Yoo ,  Young Min Park ,  Hak Hwan Kim ,  Seon Young Myoung ,  Sang Bum Lee ,  Ki Tae Park ,  Myoung Sik Jung ,  Kyeong Ik Min

发明人： Hee Seok Park ,  Gil Han Park ,  Sang Duk Yoo ,  Young Min Park ,  Hak Hwan Kim ,  Seon Young Myoung ,  Sang Bum Lee ,  Ki Tae Park ,  Myoung Sik Jung ,  Kyeong Ik Min

IPC分类号： H01L29/24 ,  H01L21/36 ,  H01L33/00

CPC分类号： C30B25/04 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/24

摘要： A method for selectively growing a nitride semiconductor, in which a mask is formed, with an opening formed therein, on a nitride semiconductor layer. A nitride semiconductor crystal is selectively grown on a portion of the nitride semiconductor layer exposed through the opening in the mask, the nitride semiconductor crystal shaped as a hexagonal pyramid and having crystal planes inclined with respect to a top surface of the nitride semiconductor. Here, the nitride semiconductor crystal has at least one intermediate stress-relieving area having crystal planes inclined at a greater angle than those of upper and lower areas of the nitride semiconductor crystal, the intermediate stress-relieving area relieving stress which occurs from continuity in the inclined crystal planes.

摘要翻译： 一种在氮化物半导体层上选择性地生长其中形成掩模的氮化物半导体，其中形成有开口的方法。 氮化物半导体晶体选择性地生长在通过掩模中的开口暴露的氮化物半导体层的一部分上，氮化物半导体晶体形状为六角锥，并具有相对于氮化物半导体的顶表面倾斜的晶面。 这里，氮化物半导体晶体具有至少一个具有比氮化物半导体晶体的上部和下部区域倾斜角度大的晶面的中间应力消除区域，由中间应力消除区域的连续性产生的中间应力消除面积减轻应力 斜晶面。