公开(公告)号：US10256813B2

公开(公告)日：2019-04-09

申请号：US15497337

申请日：2017-04-26

Applicant: QUALCOMM Incorporated

Inventor： Taewoo Kwak ,  Joseph Rutkowski

IPC: H03K3/00 ,  H03K17/687 ,  H02M3/158 ,  H02M1/08

Abstract: Techniques for improving the transient response in a switching converter are provided. An example of a gate driving circuit for driving a high-side switch in a switching converter according to the disclosure includes a first switch operably coupled to a source lead and a gate lead of the high-side switch, a first super source follower circuit operably coupled to the gate lead of the high-side switch, and a mid-voltage power supply operably coupled to the first super source follower circuit.

公开(公告)号：US11916470B2

公开(公告)日：2024-02-27

申请号：US17349687

申请日：2021-06-16

Applicant: QUALCOMM Incorporated

Inventor： Taewoo Kwak ,  Joseph Dale Rutkowski ,  Sugato Mukherjee

IPC: H02M1/08

CPC classification number: H02M1/08

Abstract: Techniques and apparatus for driving transistor gates of a switched-mode power supply (SMPS) circuit. One example power supply circuit generally includes a switching converter having a switching transistor and a gate driver having an output coupled to a gate of the switching transistor. The gate driver includes a first switching device coupled between the output of the gate driver and a first voltage rail; a second switching device coupled between the output of the gate driver and a voltage node of the gate driver; a third switching device coupled between the voltage node of the gate driver and a second voltage rail; and a voltage clamp coupled in series with a fourth switching device, the voltage clamp and the fourth switching device being coupled between a third voltage rail and the voltage node (or the output of the gate driver).

公开(公告)号：US10355590B2

公开(公告)日：2019-07-16

申请号：US15632879

申请日：2017-06-26

Applicant: QUALCOMM Incorporated

Inventor： Taewoo Kwak ,  Joseph Rutkowski

IPC: H02M3/158 ,  H02M3/335 ,  H02M1/32 ,  H02M1/36

Abstract: Method and apparatus is disclosed for providing a controlled pre-charging current for capacitive loads coupled to a boost converter. For at least some embodiments, the boost converter may include a high-side field effect transistor (FET) and a low-side FET. The boost converter may provide the pre-charge current by periodically enabling the high-side FET while the low-side FET is maintained in an off state. The high-side FET may be enabled by a square-wave signal. The pre-charge current may be delivered until the output voltage of the boost converter exceeds a reference voltage. After the output voltage exceeds the reference voltage, the boost converter may transition to a normal (switching) operation.

公开(公告)号：US10056871B2

公开(公告)日：2018-08-21

申请号：US15473538

申请日：2017-03-29

Applicant: QUALCOMM Incorporated

Inventor： Taewoo Kwak ,  Joseph Rutkowski

IPC: H03F1/34 ,  H03F3/45 ,  H03F1/02

CPC classification number: H03F3/45076 ,  H03F1/0233 ,  H03F1/14 ,  H03F1/342 ,  H03F3/45071 ,  H03F3/45183 ,  H03F3/45475 ,  H03F3/45636 ,  H03F2203/45116 ,  H03F2203/45138 ,  H03F2203/45264 ,  H03F2203/45526 ,  H03F2203/45604

Abstract: A loop compensation circuit includes a differential difference amplifier having a first transconductance stage with a first input terminal and a second input terminal. The first input terminal is coupled to a voltage reference and the second input terminal is coupled to a feedback node. The amplifier also includes a second transconductance stage having a third input terminal and a fourth input terminal. The third input terminal is coupled to a virtually specified fixed voltage and the fourth input terminal is coupled to a fixed specified voltage. The loop compensation circuit also includes a feedback impedance coupled between an output of the differential difference amplifier and the third input terminal and a second impedance between the third input terminal and the fixed specified voltage.

公开(公告)号：US12273021B2

公开(公告)日：2025-04-08

申请号：US18421175

申请日：2024-01-24

Applicant: QUALCOMM Incorporated

Inventor： Taewoo Kwak ,  Joseph Dale Rutkowski ,  Sugato Mukherjee

IPC: H02M1/08

Abstract: Techniques and apparatus for driving transistor gates of a switched-mode power supply (SMPS) circuit. One example power supply circuit generally includes a switching converter having a switching transistor and a gate driver having an output coupled to a gate of the switching transistor. The gate driver includes a first switching device coupled between the output of the gate driver and a first voltage rail; a second switching device coupled between the output of the gate driver and a voltage node of the gate driver; a third switching device coupled between the voltage node of the gate driver and a second voltage rail; and a voltage clamp coupled in series with a fourth switching device, the voltage clamp and the fourth switching device being coupled between a third voltage rail and the voltage node (or the output of the gate driver).

公开(公告)号：US20180375430A1

公开(公告)日：2018-12-27

申请号：US15632879

申请日：2017-06-26

Applicant: QUALCOMM Incorporated

Inventor： Taewoo Kwak ,  Joseph Rutkowski

IPC: H02M3/158 ,  H02M1/34 ,  H02M7/537 ,  H02M3/04 ,  H02M3/335

CPC classification number: H02M3/158 ,  H02M1/32 ,  H02M1/36 ,  H02M3/335

Abstract: Method and apparatus is disclosed for providing a controlled pre-charging current for capacitive loads coupled to a boost converter. For at least some embodiments, the boost converter may include a high-side field effect transistor (FET) and a low-side FET. The boost converter may provide the pre-charge current by periodically enabling the high-side FET while the low-side FET is maintained in an off state. The high-side FET may be enabled by a square-wave signal. The pre-charge current may be delivered until the output voltage of the boost converter exceeds a reference voltage. After the output voltage exceeds the reference voltage, the boost converter may transition to a normal (switching) operation.