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    MEMS SHOCK SENSORS
    5.
    发明申请
    MEMS SHOCK SENSORS 有权
    MEMS触发传感器

    公开(公告)号：US20080202258A1

    公开(公告)日：2008-08-28

    申请号：US11677762

    申请日：2007-02-22

    申请人： Nurul Amin ,  Song S. Xue ,  Patrick J. Ryan

    发明人： Nurul Amin ,  Song S. Xue ,  Patrick J. Ryan

    IPC分类号： G01L1/16 ,  G01L1/00

    CPC分类号： G01P15/0891 ,  G01P15/06 ,  H01H1/0036 ,  H01H9/168 ,  H01H35/14 ,  H01H35/146 ,  H01H2001/0042

    摘要： A shock sensor comprises a substrate and at least one flexure coupled to the substrate and configured to deflect upon an application of force to the shock sensor sufficient to deflect the flexure. Deflection of the at least one flexure produces a detectable change in an electrical property of the shock sensor. Examples of detectable changes in an electrical property of the shock sensor include an open circuit condition, a closed circuit condition, and a variation in voltage of a piezo-electric detector. In some embodiments, the change in the electrical property of the shock sensor may be remotely read by interrogation of a radio frequency identification transponder positioned on the substrate using a remote radio frequency identification transceiver. The disclosure also relates to a shock sensing system and method of shock detection.

    摘要翻译： 冲击传感器包括衬底和耦合到衬底的至少一个挠曲件，并且构造成在对冲击传感器施加足以偏转挠曲件的情况下偏转。 至少一个弯曲部的偏转产生震动传感器的电性能的可检测变化。 冲击传感器的电性能的可检测变化的示例包括开路状态，闭路状态和压电检测器的电压变化。 在一些实施例中，可以通过使用远程射频识别收发器询问位于衬底上的射频识别应答器来远程读取冲击传感器的电气特性的变化。 本公开还涉及一种冲击检测系统和冲击检测方法。

    High frequency field assisted write device
    6.
    发明申请
    High frequency field assisted write device 有权
    高频场辅助写装置

    公开(公告)号：US20080137224A1

    公开(公告)日：2008-06-12

    申请号：US11634767

    申请日：2006-12-06

    申请人： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Sining Mao ,  Patrick J. Ryan ,  Song S. Xue ,  Shaoping Li

    发明人： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Sining Mao ,  Patrick J. Ryan ,  Song S. Xue ,  Shaoping Li

    IPC分类号： G11B5/02

    CPC分类号： G11B5/1278 ,  G11B2005/001

    摘要： A magnetic writer includes a write element and an oscillation device disposed adjacent to the write element. The first oscillation device includes a first magnetic layer, a second magnetic layer having a magnetization vector including a component perpendicular to a major plane of the first magnetic layer. The first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer. The first oscillation device generates a high-frequency oscillation field when a current is directed perpendicular to the major plane of the first magnetic layer.

    摘要翻译： 磁性写入器包括写入元件和邻近写入元件设置的振荡器件。 第一振荡装置包括第一磁性层，具有包括垂直于第一磁性层的主平面的分量的磁化矢量的第二磁性层。 设置在第一磁性层和第二磁性层之间的第一非磁性层。 当电流垂直于第一磁性层的主平面时，第一振荡装置产生高频振荡场。

    Biasing for tri-layer magnetoresistive sensors
    7.
    发明授权
    Biasing for tri-layer magnetoresistive sensors 有权
    三层磁阻传感器的偏置

    公开(公告)号：US07177122B2

    公开(公告)日：2007-02-13

    申请号：US10694483

    申请日：2003-10-27

    申请人： Chunhong Hou ,  Sining Mao ,  Eric S. Linville ,  Olle Heinonen ,  Xuefei Tang ,  Qing He ,  Eric W. Singleton ,  Song S. Xue

    发明人： Chunhong Hou ,  Sining Mao ,  Eric S. Linville ,  Olle Heinonen ,  Xuefei Tang ,  Qing He ,  Eric W. Singleton ,  Song S. Xue

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3932 ,  G11B5/3909 ,  G11B2005/0018 ,  G11B2005/3996

    摘要： A biasing system for a tri-layer reader stack magnetoresistive sensor is disclosed. The tri-layer reader stack includes a first ferromagnetic free layer, a second ferromagnetic free layer, and a magnetoresistive layer between the first and second ferromagnetic free layers. The free layers are positioned in the tri-layer reader stack such that quiescent state magnetizations of the free layers are antiparallel. A biasing layer is positioned with regard to the tri-layer reader stack, typically separated from the tri-layer reader stack by a nonmagnetic spacer layer. A biasing means is positioned such that a magnetization of the biasing layer is perpendicular to the quiescent state magnetizations of the free layers. This biasing results in the free layers having biased magnetizations directed substantially orthogonal with respect to each other.

    摘要翻译： 公开了一种用于三层读取器堆叠磁阻传感器的偏置系统。 三层读取器堆叠包括第一铁磁自由层，第二铁磁自由层和在第一和第二铁磁性自由层之间的磁阻层。 自由层位于三层读取器堆叠中，使得自由层的静态状态磁化反平行。 偏置层相对于三层读取器堆叠定位，通常通过非磁性间隔层与三层读取器堆叠分离。 偏置装置被定位成使得偏置层的磁化垂直于自由层的静态状态磁化。 该偏置导致自由层具有相对于彼此基本上正交的偏磁化。