公开(公告)号：US3537029A

公开(公告)日：1970-10-27

申请号：US3537029D

申请日：1968-06-10

Applicant: RCA CORP

Inventor： KRESSEL HENRY ,  HAWRYLO FRANK Z

IPC: H01L33/00 ,  H01S5/20 ,  H01S5/30 ,  H01S5/32 ,  H01S5/40 ,  H01S3/18

CPC classification number: H01S5/32 ,  H01L33/00 ,  H01S5/20 ,  H01S5/30 ,  H01S5/4087 ,  Y10S148/032 ,  Y10S148/107 ,  Y10S438/956

公开(公告)号：US3560275A

公开(公告)日：1971-02-02

申请号：US3560275D

申请日：1968-11-08

Applicant: RCA CORP

Inventor： KRESSEL HENRY ,  HAWRYLO FRANK Z

IPC: C30B19/00 ,  C30B19/06 ,  C30B19/08 ,  C30B29/40 ,  H01L21/208 ,  H01L33/00 ,  H01L7/38

CPC classification number: C30B19/061 ,  C30B19/08 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02625 ,  H01L21/02628 ,  H01L33/00 ,  Y10S148/002 ,  Y10S148/107 ,  Y10S438/915

Abstract: A PN JUNCTION IS FORMED IN A SOLUTION GROWN EPITAXIAL LAYER CONSISTING OF A MIXED III-V COMPOUND SEMICONDUCTIVE MATERIAL BY UTILIZING A SINGLE AMPHOTERIC CONDUCTIVITY MODIFIER IN THE SOLUTION, AND VARYING THE TEMPERATURE OF THE SOLUTION DURING THE DEPOSITION OF THE EPITAXIAL LAYER. THE SEMICONDUCTIVE MATERIAL HAS THE COMPOSITION BAALBGACINDNEPFASGSBH, WHEREIN EACH OF SUBSCRIPTS, A, B, C, D, E, F, G, H RANGES FROM 0 TO 1, AND A+B+C+D=1, AND E+F+G+H=1. THE AMPHOTERIC CONDUCTIVITY MODIFIER IS SILICON OR GFERMANIUM, AND THE ADDITION OF THE AMPHOTERIC MODIFIER TO THE SOLUTION SHORTLY BEFORE THE DEPOSITION OF THE EPITAXIAL LAYER IS ESPECIALLY EFFICACIOUS. ALSO DESCRIBED IS THE FABRICATION OF AN IMPROVED ELECTROLUMINESCENT DIODE FROM A SUB-CLASS OF THE MIXED III-V COMPOUND MATERIALS COMPRISING TWO MEMBERS OF THE GROUP CONSISTING OF BORON, ALULMINUM, GALLIUM AND INDIUM, AND ONE MEMBER OF THE GROUP CONSISTING OF NITROGEN, PHOSPHORUS, ARSENIC AND ANTIMONY.

公开(公告)号：US3649382A

公开(公告)日：1972-03-14

申请号：US3649382D

申请日：1968-02-26

Applicant: RCA CORP

Inventor： HAWRYLO FRANK Z

IPC: H01L21/00 ,  H01L21/208 ,  H01L33/00 ,  H01L7/38 ,  B01J17/00 ,  H05B33/00

CPC classification number: H01L21/00 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625 ,  H01L21/02628 ,  H01L33/00 ,  Y10S148/039 ,  Y10S148/107

Abstract: A PROCESS FOR MANUFACTURING A SEMICONDUCTOR LASER DIODE BY DEPOSITING FROM THE LIQUID PHASE SUCCESSIVE P TYPE AND N TYPE GALLIUM ARSENIDE EPITAZIAL LAYERS WITH A P-N JUNCTION THEREBETWEEN. THE N TYPE LAYER IS GROWN BY PRECIPITATION FROM A GRADUALLY COOLED MELT OF GALLIUM ARSENIDE AND TELLURIUM IN A GALLIUM SOLVENT. THE P TYPE LAYER IS DEPOSITED BY PRECIPITATION FRO A SLOWLY COOLED MELT OF GALLIUM ARSENIDE AND ZINC IN A GALLIUM SOLVENT WHILE THE LAYERS MAY BE DEPOSITED IN EITHER ORDER, IMPROVED OHMIC CONTACTS AND REPRODUCIBILITY OF DEVICE PARAMETERS ARE OBTAINED BY DEPOSITING THE P TYPE LAYER FIRST.