公开(公告)号：US6054370A

公开(公告)日：2000-04-25

申请号：US107393

申请日：1998-06-30

申请人： Brian S. Doyle

发明人： Brian S. Doyle

IPC分类号： H01L21/762 ,  H01L21/30 ,  A01L21/46

CPC分类号： H01L21/76254 ,  Y10S438/915

摘要： A method of fabricating a film of active devices is provided. First damaged regions are formed, in a substrate, underneath first areas of the substrate where active devices are to be formed. Active devices are formed onto the first areas. Second damaged regions are formed, in the substrate, between the first damaged regions. The film is caused to detach from a rest of the substrate at a location where the first and second damaged regions are formed.

摘要翻译： 提供一种制造有源器件薄膜的方法。 在基板中，在要形成有源器件的衬底的第一区域的下方形成第一损坏区域。 主动装置形成在第一区域上。 第二受损区域在基板中形成在第一受损区域之间。 在形成第一和第二受损区域的位置处使膜与基板的其余部分分离。

公开(公告)号：US4583110A

公开(公告)日：1986-04-15

申请号：US620591

申请日：1984-06-14

申请人： Thomas N. Jackson ,  Peter D. Kirchner ,  George D. Pettit ,  Jerry M. P. Woodall

发明人： Thomas N. Jackson ,  Peter D. Kirchner ,  George D. Pettit ,  Jerry M. P. Woodall

IPC分类号： H01L29/41 ,  H01L21/28 ,  H01L21/285 ,  H01L29/43 ,  H01L29/45 ,  H01L23/48 ,  H01L29/167

CPC分类号： H01L29/452 ,  H01L21/28575 ,  Y10S148/084 ,  Y10S148/14 ,  Y10S438/915

摘要： A 10.sup.-6 ohm cm.sup.2 ohmic contact is provided by formation of a 20-50 Angstroms deep surface region with a net donor density of higher than 5.times.10.sup.19 /cc. An amphoteric dopant of Si or Ge is incorporated in a pinned Fermi level condition so that an enhanced surface donor concentration occurs.

摘要翻译： 通过形成20-50埃的深表面区域，净供体密度高于5×1019 / cc，提供10-6欧姆的欧姆接触。 将Si或Ge的两性掺杂剂掺入固定的费米能级条件下，从而发生增强的表面供体浓度。

公开(公告)号：US4300960A

公开(公告)日：1981-11-17

申请号：US131413

申请日：1980-03-18

申请人： Susumu Koike ,  Hitoo Iwasa

发明人： Susumu Koike ,  Hitoo Iwasa

IPC分类号： H01L21/208 ,  H01L33/30 ,  H01L33/36

CPC分类号： H01L33/0062 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625 ,  H01L21/02628 ,  Y10S438/915

摘要： A method of making a light emitting diode by a liquid phase epitaxial growth is disclosed, the method comprising the steps ofgrowing a first p-type epitaxial layer from a gallium melt containing Zn, and Ga.sub.2 O.sub.3 and GaP on an n-type GaP substrate, or on an n-type epitaxial layer formed on an n-type GaP substrate, at a cooling rate greater than 3.degree. C./min., andgrowing a second p-type epitaxial layer from the gallium melt on the first p-type epitaxial layer at a cooling rate less than 1.5.degree. C./min. This procedure makes the p-type carrier density high at the surface region of the second p-type epitaxial layer and the density of Zn-O pairs high in the first p-type epitaxial layer.

摘要翻译： 公开了一种通过液相外延生长制造发光二极管的方法，该方法包括以下步骤：从含有Zn的镓熔体和在n型GaP衬底上生长Ga 2 O 3和GaP的第一p型外延层， 或在n型GaP衬底上形成的n型外延层上，以大于3℃/分钟的冷却速率，在第一p型上从镓熔体生长第二p型外延层 外延层，冷却速度小于1.5℃/ min。 该过程使得第二p型外延层的表面区域的p型载流子密度高，并且第一p型外延层中的Zn-O对的密度高。

公开(公告)号：US3560275A

公开(公告)日：1971-02-02

申请号：US3560275D

申请日：1968-11-08

申请人： RCA CORP

发明人： KRESSEL HENRY ,  HAWRYLO FRANK Z

IPC分类号： C30B19/00 ,  C30B19/06 ,  C30B19/08 ,  C30B29/40 ,  H01L21/208 ,  H01L33/00 ,  H01L7/38

CPC分类号： C30B19/061 ,  C30B19/08 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02625 ,  H01L21/02628 ,  H01L33/00 ,  Y10S148/002 ,  Y10S148/107 ,  Y10S438/915

摘要： A PN JUNCTION IS FORMED IN A SOLUTION GROWN EPITAXIAL LAYER CONSISTING OF A MIXED III-V COMPOUND SEMICONDUCTIVE MATERIAL BY UTILIZING A SINGLE AMPHOTERIC CONDUCTIVITY MODIFIER IN THE SOLUTION, AND VARYING THE TEMPERATURE OF THE SOLUTION DURING THE DEPOSITION OF THE EPITAXIAL LAYER. THE SEMICONDUCTIVE MATERIAL HAS THE COMPOSITION BAALBGACINDNEPFASGSBH, WHEREIN EACH OF SUBSCRIPTS, A, B, C, D, E, F, G, H RANGES FROM 0 TO 1, AND A+B+C+D=1, AND E+F+G+H=1. THE AMPHOTERIC CONDUCTIVITY MODIFIER IS SILICON OR GFERMANIUM, AND THE ADDITION OF THE AMPHOTERIC MODIFIER TO THE SOLUTION SHORTLY BEFORE THE DEPOSITION OF THE EPITAXIAL LAYER IS ESPECIALLY EFFICACIOUS. ALSO DESCRIBED IS THE FABRICATION OF AN IMPROVED ELECTROLUMINESCENT DIODE FROM A SUB-CLASS OF THE MIXED III-V COMPOUND MATERIALS COMPRISING TWO MEMBERS OF THE GROUP CONSISTING OF BORON, ALULMINUM, GALLIUM AND INDIUM, AND ONE MEMBER OF THE GROUP CONSISTING OF NITROGEN, PHOSPHORUS, ARSENIC AND ANTIMONY.

公开(公告)号：US3158512A

公开(公告)日：1964-11-24

申请号：US19446662

申请日：1962-05-14

申请人： RCA CORP

发明人： HERBERT NELSON ,  BENYON JR CARL W

IPC分类号： C30B19/06 ,  H01L21/00 ,  H01L21/18 ,  H01L29/00

CPC分类号： H01L21/00 ,  C30B19/061 ,  H01L21/185 ,  H01L29/00 ,  Y10S148/107 ,  Y10S438/915 ,  Y10S438/925

公开(公告)号：US06214733B1

公开(公告)日：2001-04-10

申请号：US09442030

申请日：1999-11-17

申请人： Mike E. Sickmiller

发明人： Mike E. Sickmiller

IPC分类号： H01L21302

CPC分类号： H01L21/6835 ,  H01L2221/68309 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/83192 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/12041 ,  Y10S438/915 ,  Y10S438/977

摘要： A process for lift-off of at least one thin film layer situated on a substrate is disclosed, including the steps of: depositing a support layer such as polymer on the thin film layer, wherein the support layer maintains the structural integrity of the thin film layer; attaching a rigid carrier superstrate to the support layer; and removing at least a portion of the substrate, wherein the thin film layer remains attached to the carrier superstrate via the support layer. After removing the substrate, the thin film layer is attached to a host substrate, and the carrier superstrate is removed from the thin film layer to leave the thin film layer attached to the host substrate. Removing the carrier superstrate from the thin film layer can include mechanically detaching the carrier superstrate from the thin film layer, such that only selected segments of the thin film layer remain attached to the host substrate. Attaching the thin film layer to the host substrate can include selectively attaching segments of the thin film layer to the host substrate, such that when the carrier superstrate is removed, the selected segments of the thin film layer remain attached to the host substrate. The selective attachment can be by selectively depositing bonding material on segments of the host substrate, and aligning the thin film layer with the host substrate such that the selected segments of the thin film material are aligned with said segments of the host substrate, respectively.

摘要翻译： 公开了一种用于剥离位于基底上的至少一个薄膜层的方法，包括以下步骤：在薄膜层上沉积诸如聚合物的支撑层，其中支撑层保持薄膜的结构完整性 层; 将刚性载体上层附着到所述支撑层上; 以及去除所述衬底的至少一部分，其中所述薄膜层经由所述支撑层保持附着到所述载体上层。 在去除衬底之后，将薄膜层附接到主体衬底，并且从薄膜层移除载体覆层以使薄膜层附着到主体衬底。 从薄膜层去除载体覆层可以包括将载体覆层与薄膜层机械地分离，使得只有薄膜层的选定部分保持附接到主体基板。 将薄膜层附着到主机基板可以包括选择性地将薄膜层的部分连接到主机基板，使得当移除载体覆盖层时，薄膜层的选定部分保持附着到主机基板。 选择性连接可以是通过选择性地在主体衬底的区段上沉积粘合材料，并且使薄膜层与主体衬底对准，使得所选择的薄膜材料段分别与主衬底的所述段对准。

公开(公告)号：US5882950A

公开(公告)日：1999-03-16

申请号：US773185

申请日：1996-12-27

申请人： Suk-Ki Min ,  Seong-Il Kim ,  Eun Kyu Kim

发明人： Suk-Ki Min ,  Seong-Il Kim ,  Eun Kyu Kim

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L31/0352 ,  H01L31/04 ,  H01L31/10 ,  H01L33/16 ,  H01L33/30 ,  H01L21/00 ,  H01L21/36 ,  H01L21/425

CPC分类号： H01L21/02395 ,  H01L21/0243 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S148/042 ,  Y10S148/05 ,  Y10S148/056 ,  Y10S148/168 ,  Y10S438/912 ,  Y10S438/915

摘要： A fabrication method for a horizontal direction semiconductor PN junction array which can be achieved when an epitaxial layer is grown by a metalorganic chemical vapor deposition (MOCVD method) by introducing (or doping) a small amount of CCl.sub.4 or CBr.sub.4 gas, includes forming a recess on an N type GaAs substrate by using a non-planar growth, performing a growth method of a P type epitaxial layer on the N type GaAs substrate by a metalorganic chemical vapor deposition method, and forming a horizontal direction PN junction array of P-GaAs/N-GaAs or P-AlGaAs/N-GaAs by introducing a gas comprising CCl.sub.4 or CBr.sub.4 .

摘要翻译： 通过引入（或掺杂）少量CCl4或CBr4气体，通过金属有机化学气相沉积（MOCVD法）生长外延层时可以实现的水平方向半导体PN结阵列的制造方法包括形成凹陷 通过使用非平面生长在N型GaAs衬底上，通过金属有机化学气相沉积法在N型GaAs衬底上进行P型外延层的生长方法，并且形成P-GaAs的水平方向PN结阵列 / N-GaAs或P-AlGaAs / N-GaAs，通过引入包含CCl 4或CBr 4的气体。

公开(公告)号：US5728605A

公开(公告)日：1998-03-17

申请号：US772061

申请日：1996-12-19

申请人： Natsuhiko Mizutani

发明人： Natsuhiko Mizutani

IPC分类号： H01S5/00 ,  G02F1/015 ,  H01L33/18 ,  H01L33/24 ,  H01S5/026 ,  H01S5/042 ,  H01S5/22 ,  H01S5/30 ,  H01L21/00

CPC分类号： H01L33/24 ,  H01L33/18 ,  H01S5/0424 ,  H01S5/3081 ,  Y10S438/915

摘要： An optical semiconductor device includes a plurality of electrodes formed on a common side of a substrate. On the substrate, a first type conductivity layer, a first main layer such as an active layer, which has any one of an undoped type, a first type conductivity and a second type conductivity, and a second type conductivity layer are formed in this order. The layers down to at least the second type conductivity layer are removed to form a ridge and at least one contact groove, which reaches the first type conductivity layer, is formed, such that surfaces having different surface indices from a surface index of the substrate are exposed at the ridge and the contact groove. A regrowth is performed on the exposed surfaces using an amphi-conductivity impurity as a dopant, such that a first portion having a first type conductivity is grown on the contact groove and a second portion having a second type conductivity is grown on the ridge. At least one transverse pn reverse junction portion is also formed during the regrowth performing step. The first type conductivity layer and the first portion act as a current injection path or first means for applying an electric field to the first main layer, and the second type conductivity layer and the second portion act as another current injection path or second means for applying an electric field to the first main layer which cooperates with the first means.

摘要翻译： 光学半导体器件包括形成在基板的共同侧上的多个电极。 在基板上，依次形成第一导电层，具有非掺杂型，第一导电型，第二导电型中的任一种的第一主层，有源层，第二导电层，第二导电层 。 去除至少第二类型导电层的层以形成脊，形成到达第一类型导电层的至少一个接触槽，使得具有与基板的表面折射率不同的表面指数的表面是 暴露在脊和接触槽处。 在暴露的表面上使用阿米波导电杂质作为掺杂剂进行再生长，使得在接触槽上生长具有第一类型电导率的第一部分，并且在脊上生长具有第二类型电导率的第二部分。 在再生长执行步骤期间还形成至少一个横向pn反向连接部分。 第一类型导电层和第一部分充当电流注入路径或用于向第一主层施加电场的第一装置，并且第二类型导电层和第二部分作为另一电流注入路径或第二装置施加 到与第一装置配合的第一主层的电场。

公开(公告)号：US4692194A

公开(公告)日：1987-09-08

申请号：US904759

申请日：1986-09-25

申请人： Jun-ichi Nishizawa

发明人： Jun-ichi Nishizawa

IPC分类号： C30B19/00 ,  C30B19/04 ,  C30B29/40 ,  H01L21/208

CPC分类号： C30B19/04 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02625 ,  H01L21/02628 ,  Y10S117/907 ,  Y10S438/915

摘要： In a solution growth method to perform an epitaxial growth by doping an amphoteric impurity into a Group III-V compound semiconductor crystal, vapor of a crystal-constituting Group V element is supplied to the solution, during the growth process, from above this solution under a controlled vapor pressure, while maintaining the growth temperature at a constant value by relying on, for example, a temperature difference technique, whereby the conductivity type in the grown crystal layer can be controlled easily as desired, and also a pn junction can be conveniently formed in the grown crystal.

摘要翻译： 在通过将两性杂质掺杂到III-V族化合物半导体晶体中进行外延生长的溶液生长方法中，在生长过程中，从该溶液的上方向溶液中提供晶体构成的V族元素的蒸气 通过依靠例如温差技术将生长温度保持在恒定值，由此可以根据需要容易地控制生长晶体层中的导电类型，并且还可以方便地进行pn结的控制蒸气压 在生长的水晶中形成。

公开(公告)号：US3925147A

公开(公告)日：1975-12-09

申请号：US37541773

申请日：1973-07-02

申请人： HUGHES AIRCRAFT CO

发明人： KIMURA HIROSHI

IPC分类号： C30B9/00 ,  C30B9/06 ,  C30B33/00 ,  H01L7/62 ,  B01J17/00

CPC分类号： C30B9/00 ,  C30B9/06 ,  C30B29/46 ,  C30B33/00 ,  Y10S438/915

摘要： Large bulk single crystals of lead tin telluride are synthesized by first mixing desired amounts of lead, tin and tellurium with, if desired, bismuth and reacting the mixture at 950*C to form a source material. The source material is then converted into a single crystal by recrystallization and digestion in a uniform 850*C to 860*C temperature zone in order to prevent transport of material and, hence, variations in composition. Thereafter, these crystals, which are doped with bismuth, or crystals made by Bridgman or Czochralski growth, are cut into wafers and isothermally annealed at 600*C to 650*C under a metal-rich vapor pressure obtained from metal-rich lead tin telluride powder. Lowering of temperature to about 200*C and further annealing is capable of converting p-type crystals to n-type crystals. The result of annealing, whether p-type, n-type or intrinsic, is a low carrier concentration, high mobility crystal.