公开(公告)号：US3699401A

公开(公告)日：1972-10-17

申请号：US3699401D

申请日：1971-05-11

Applicant: RCA CORP

Inventor： TIETJFN JAMES JOSEPH ,  WILLIAMS BROWN F ,  WANG CHIN CHUN

IPC: H01J1/34 ,  H01J29/38 ,  H01L21/205 ,  H01L15/00

CPC classification number: H01J29/38 ,  H01J1/34 ,  H01J2201/3423 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02461 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/02546 ,  H01L21/0262 ,  Y10S148/007 ,  Y10S148/056 ,  Y10S148/059 ,  Y10S148/064 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/115 ,  Y10S148/119 ,  Y10S148/12 ,  Y10S148/15

Abstract: A transmissive semiconductor photocathode structure comprising a first monocrystalline epitaxial layer of silicon or germanium about 200 to 300 nanometers thick on a major surface of a transparent monocrystalline dielectric substrate. On the silicon or germanium layer is a second monocrystalline epitaxial layer of a III-V or II-VI semiconductor compound having a thickness of at least about three microns. On the second layer is a third monocrystalline epitaxial layer of a III-V semiconductor compound having an energy bandgap smaller than the second layer compound and having a thickness on the order of from about one micron to about five microns. Also disclosed is a photoemissive electron tube utilizing the transmissive photocathode structure, with a work function reducing material deposited on the emissive surface of the third layer.

Abstract translation: 一种透射半导体光电阴极结构，其包括在透明单晶电介质基底的主表面上的约200至300纳米厚的硅或锗的第一单晶外延层。 硅或锗层是具有至少约三微米厚度的III-V或II-VI半导体化合物的第二单晶外延层。 在第二层上是III-V半导体化合物的第三单晶外延层，其具有小于第二层化合物的能带隙，并且具有约1微米至约5微米的厚度。