公开(公告)号：US3699404A

公开(公告)日：1972-10-17

申请号：US3699404D

申请日：1971-02-24

Applicant: RCA CORP

Inventor： SIMON RALPH E ,  WILLIAMS BROWN F

IPC: H01J1/32 ,  H01L15/00

CPC classification number: H01J1/32 ,  Y10S148/119 ,  Y10S148/122 ,  Y10S148/15

Abstract: An electron emitter comprising a body of gallium phosphide having a thin surface layer of cesium. The gallium phosphide is doped with a deep acceptor such as iron. Interaction between the cesium layers and the semiconductor surface results in ionization of the deep acceptor impurities in a small region near the surface. The ionization of deep acceptors at the cesiated surface results in a graded concentration of ionized impurities through the gallium phosphide layer, which establishes an internal electric field for impelling electrons toward the cesiated emitting surface.

Abstract translation: 一种电子发射器，包括具有铯薄表面层的磷化硅体。 磷化镓掺有深受体如铁。 铯层与半导体表面之间的相互作用导致表面附近的小区域内的深受主杂质电离。 在受精表面上的深受体的电离导致通过磷化镓层的离子化杂质的分级浓度，其形成用于将电子推向发光表面的内部电场。

公开(公告)号：US3863065A

公开(公告)日：1975-01-28

申请号：US29382972

申请日：1972-10-02

Applicant: RCA CORP

Inventor： KOSONOCKY WALTER FRANK ,  WILLIAMS BROWN F

IPC: G01J5/02 ,  G01J5/28 ,  G11C27/04 ,  H01L21/339 ,  H01L27/148 ,  H01L29/762 ,  H01L29/768 ,  H01L15/00

CPC classification number: H01L29/76883 ,  H01L27/14887 ,  H01L29/76875

Abstract: Excess charge signal generated in response to optical overload of a charge-coupled sensing region is removed from that region by a bus imbedded in the substrate of the sensing array. The bus is separated from a row of sensing regions by a potential barrier produced by an electrode associated with the bus. This barrier is lower than that present, during the optical detection period, between adjacent sensing regions of a row and its value is affected by the voltages present on the conductors which pass over the bus and lead to the sensing regions.

Abstract translation: 通过嵌入在感测阵列的基板中的总线，从该区域去除响应于电荷耦合感测区域的光学过载而产生的过剩电荷信号。 总线通过由与总线相关联的电极产生的势垒与一行感测区域分离。 该光栅在光学检测周期内低于存在于一行的相邻感测区域之间的势垒，其值受到通过总线并导致感测区域的导体上存在的电压的影响。

公开(公告)号：US3699401A

公开(公告)日：1972-10-17

申请号：US3699401D

申请日：1971-05-11

Applicant: RCA CORP

Inventor： TIETJFN JAMES JOSEPH ,  WILLIAMS BROWN F ,  WANG CHIN CHUN

IPC: H01J1/34 ,  H01J29/38 ,  H01L21/205 ,  H01L15/00

CPC classification number: H01J29/38 ,  H01J1/34 ,  H01J2201/3423 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02461 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/02546 ,  H01L21/0262 ,  Y10S148/007 ,  Y10S148/056 ,  Y10S148/059 ,  Y10S148/064 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/115 ,  Y10S148/119 ,  Y10S148/12 ,  Y10S148/15

Abstract: A transmissive semiconductor photocathode structure comprising a first monocrystalline epitaxial layer of silicon or germanium about 200 to 300 nanometers thick on a major surface of a transparent monocrystalline dielectric substrate. On the silicon or germanium layer is a second monocrystalline epitaxial layer of a III-V or II-VI semiconductor compound having a thickness of at least about three microns. On the second layer is a third monocrystalline epitaxial layer of a III-V semiconductor compound having an energy bandgap smaller than the second layer compound and having a thickness on the order of from about one micron to about five microns. Also disclosed is a photoemissive electron tube utilizing the transmissive photocathode structure, with a work function reducing material deposited on the emissive surface of the third layer.

Abstract translation: 一种透射半导体光电阴极结构，其包括在透明单晶电介质基底的主表面上的约200至300纳米厚的硅或锗的第一单晶外延层。 硅或锗层是具有至少约三微米厚度的III-V或II-VI半导体化合物的第二单晶外延层。 在第二层上是III-V半导体化合物的第三单晶外延层，其具有小于第二层化合物的能带隙，并且具有约1微米至约5微米的厚度。

公开(公告)号：US3478213A

公开(公告)日：1969-11-11

申请号：US3478213D

申请日：1967-09-05

Applicant: RCA CORP

Inventor： SIMON RALPH E ,  WILLIAMS BROWN F ,  WASSERMAN RALPH

IPC: H01J1/308 ,  H01J1/32 ,  H01J1/34 ,  H01J39/12

CPC classification number: H01J1/34 ,  H01J1/308 ,  H01J1/32 ,  H01J2201/3423 ,  Y10S148/051 ,  Y10S148/12