Method of manufacturing a resin-sealed semiconductor device

    公开(公告)号:US11705344B2

    公开(公告)日:2023-07-18

    申请号:US17405550

    申请日:2021-08-18

    CPC classification number: H01L21/565 H01L21/02041 H01L2924/181

    Abstract: A technique capable of shortening process time for plasma cleaning is provided. A method of manufacturing a semiconductor device includes a step of preparing a substrate including a plurality of device regions each including a semiconductor chip electrically connected to a plurality of terminals formed on a main surface by a wire, a step of delivering the substrate while emitting plasma generated in atmospheric pressure to the main surface of the substrate, a step of delivering the substrate while capturing an image of a region of the main surface of the substrate and a step of forming a sealing body by sealing the semiconductor chip and the wire with a resin.

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