公开(公告)号：US20180277214A1

公开(公告)日：2018-09-27

申请号：US15900516

申请日：2018-02-20

Applicant: Renesas Electronics Corporation

Inventor： Takashi KURAFUJI ,  Tomoya OGAWA ,  Yasuhiko TAITO

IPC: G11C16/04 ,  G11C16/28 ,  G11C16/10 ,  G11C16/14

CPC classification number: G11C16/0441 ,  G11C7/062 ,  G11C7/1006 ,  G11C7/1063 ,  G11C16/10 ,  G11C16/14 ,  G11C16/26 ,  G11C16/28 ,  G11C16/30 ,  G11C2207/063

Abstract: A storage device includes a data memory unit and a status memory unit. The data memory unit includes a pair of flash memory cells to be read by a complementary read mode, and 1-bit data is stored therein by the pair of flash memory cells. The status memory unit includes a flash memory cell to be read by a reference read mode, and a status flag is stored therein by the flash memory cell.

公开(公告)号：US20160012900A1

公开(公告)日：2016-01-14

申请号：US14859110

申请日：2015-09-18

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tomoya OGAWA ,  Takashi ITO ,  Mitsuhiro TOMOEDA

IPC: G11C16/14 ,  G11C16/32

CPC classification number: G11C16/14 ,  G11C16/06 ,  G11C16/12 ,  G11C16/30 ,  G11C16/32

Abstract: In a nonvolatile memory device provided in a semiconductor device, when data is erased based on a band-to-band tunneling scheme, supply of a boosted voltage to a memory cell (MC) to be erased is ended when a condition that an output voltage (VUCP) of a charge pump circuit has recovered to a predetermined reference voltage is satisfied and additionally a condition that a predetermined reference time has elapsed since start of supply of the boosted voltage (VUCP) to the memory cell (MC) to be erased is satisfied.

Abstract translation: 在设置在半导体器件中的非易失性存储器件中，当基于带 - 带隧穿方案擦除数据时，当要被擦除的存储器单元（MC）的提升电压向输出电压 已经恢复到预定参考电压的电荷泵电路（VUCP）被满足，并且另外从开始向被擦除的存储单元（MC）提供升压电压（VUCP）以来经过了预定基准时间的条件是 满意。