公开(公告)号：US20160365278A1

公开(公告)日：2016-12-15

申请号：US15147591

申请日：2016-05-05

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kiyoshi MAESHIMA ,  Kotaro HORIKOSHI ,  Katsuhiko HOTTA ,  Toshiyuki TAKAHASHI ,  Hironori OCHI ,  Kenichi SHOJI

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/321 ,  H01L23/528 ,  H01L21/311 ,  H01L21/3205

CPC classification number: H01L21/76879 ,  H01L21/0206 ,  H01L21/02074 ,  H01L21/0209 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/76808 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53295 ,  H01L29/66477 ,  H01L29/6659

Abstract: It is to provide a manufacturing method of a semiconductor device including the following step of: preparing a semiconductor substrate having a silicon nitride film on the rear surface; forming an interlayer insulating film having a via hole on the main surface of the semiconductor substrate; and forming a via-fill selectively within the via hole. The method further includes the steps of: performing the wafer rear surface cleaning to expose the surface of the silicon nitride film formed on the rear surface of the semiconductor substrate; and thereafter, forming a photoresist film made of chemical amplification type resist on the interlayer insulating film and the via-fill over the main surface of the semiconductor substrate, in which the semiconductor substrate is stored in an atmosphere with the ammonium ion concentration of 1000 μg/m3 and less.

Abstract translation: 提供一种半导体器件的制造方法，包括以下步骤：在后表面上制备具有氮化硅膜的半导体衬底; 在所述半导体衬底的主表面上形成具有通孔的层间绝缘膜; 以及在所述通孔内选择性地形成通孔填充物。 该方法还包括以下步骤：执行晶片后表面清洁以暴露形成在半导体衬底的后表面上的氮化硅膜的表面; 然后在半导体衬底的主表面上的层间绝缘膜和通孔填充物上形成由化学放大型抗蚀剂制成的光致抗蚀剂膜，其中半导体衬底在铵离子浓度为1000μg的气氛中储存 / m3以下。

公开(公告)号：US20170358489A1

公开(公告)日：2017-12-14

申请号：US15670867

申请日：2017-08-07

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kiyoshi MAESHIMA ,  Kotaro HORIKOSHI ,  Katsuhiko HOTTA ,  Toshiyuki TAKAHASHI ,  Hironori OCHI ,  Kenichi SHOJI

IPC: H01L21/768 ,  H01L29/66 ,  H01L21/321 ,  H01L23/532 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/76879 ,  H01L21/0206 ,  H01L21/02074 ,  H01L21/0209 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/76808 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53295 ,  H01L29/66477 ,  H01L29/6659

Abstract: It is to provide a manufacturing method of a semiconductor device including the following steps of: preparing a semiconductor substrate having a silicon nitride film on the rear surface; forming an interlayer insulating film having a via hole on the main surface of the semiconductor substrate; and forming a via-fill selectively within the via hole. The method further includes the steps of: performing the wafer rear surface cleaning to expose the surface of the silicon nitride film formed on the rear surface of the semiconductor substrate; and thereafter, forming a photoresist film made of chemical amplification type resist on the interlayer insulating film and the via-fill over the main surface of the semiconductor substrate, in which the semiconductor substrate is stored in an atmosphere with the ammonium ion concentration of 1000 μg/m3 and less.