公开(公告)号：US20170110399A1

公开(公告)日：2017-04-20

申请号：US15394752

申请日：2016-12-29

Applicant: Renesas Electronics Corporation

Inventor： Tatsuya Usami ,  Yukio Miura ,  Hideaki Tsuchiya

IPC: H01L23/528 ,  H01L23/522 ,  H01L21/265 ,  H01L21/02 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L21/02074 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/263 ,  H01L21/265 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/321 ,  H01L21/768 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76859 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes an interlayer insulating film INS2, adjacent Cu wirings M1W formed in the interlayer insulating film INS2, and an insulating barrier film BR1 which is in contact with a surface of the interlayer insulating film INS2 and surfaces of the Cu wirings M1W and covers the interlayer insulating film INS2 and the Cu wirings M1W. Between the adjacent Cu wirings M1W, the interlayer insulating film INS2 has a damage layer DM1 on its surface, and has an electric field relaxation layer ER1 having a higher nitrogen concentration than a nitrogen concentration of the damage layer DM1 at a position deeper than the damage layer DM1.

公开(公告)号：US09559052B2

公开(公告)日：2017-01-31

申请号：US15047623

申请日：2016-02-18

Applicant: Renesas Electronics Corporation

Inventor： Tatsuya Usami ,  Yukio Miura ,  Hideaki Tsuchiya

IPC: H01L21/00 ,  H01L23/522 ,  H01L21/321 ,  H01L21/768 ,  H01L21/02 ,  H01L21/263 ,  H01L21/265 ,  H01L23/528 ,  H01L23/532 ,  H01L21/3105 ,  H01L21/311

CPC classification number: H01L23/528 ,  H01L21/02074 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/263 ,  H01L21/265 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/321 ,  H01L21/768 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76859 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes an interlayer insulating film INS2, adjacent Cu wirings M1W formed in the interlayer insulating film INS2, and an insulating barrier film BR1 which is in contact with a surface of the interlayer insulating film INS2 and surfaces of the Cu wirings M1W and covers the interlayer insulating film INS2 and the Cu wirings M1W. Between the adjacent Cu wirings M1W, the interlayer insulating film INS2 has a damage layer DM1 on its surface, and has an electric field relaxation layer ER1 having a higher nitrogen concentration than a nitrogen concentration of the damage layer DM1 at a position deeper than the damage layer DM1.

Abstract translation: 半导体器件包括层间绝缘膜INS2，形成在层间绝缘膜INS2中的相邻的Cu布线M1W和与层间绝缘膜INS2的表面接触的绝缘阻挡膜BR1和Cu布线M1W和盖的表面 层间绝缘膜INS2和Cu布线M1W。 在相邻的Cu配线M1W之间，层间绝缘膜INS2在其表面具有损伤层DM1，并且在比损伤深的位置具有比损伤层DM1的氮浓度高的氮浓度的电场缓和层ER1 层DM1。

公开(公告)号：US09281276B2

公开(公告)日：2016-03-08

申请号：US14381572

申请日：2013-11-08

Applicant: Renesas Electronics Corporation

Inventor： Tatsuya Usami ,  Yukio Miura ,  Hideaki Tsuchiya

IPC: H01L21/00 ,  H01L23/532 ,  H01L21/321 ,  H01L21/768 ,  H01L21/02 ,  H01L21/263 ,  H01L21/265 ,  H01L23/528

CPC classification number: H01L23/528 ,  H01L21/02074 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/263 ,  H01L21/265 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/321 ,  H01L21/768 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76859 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes an interlayer insulating film INS2, adjacent Cu wirings M1W formed in the interlayer insulating film INS2, and an insulating barrier film BR1 which is in contact with a surface of the interlayer insulating film INS2 and surfaces of the Cu wirings M1W and covers the interlayer insulating film INS2 and the Cu wirings M1W. Between the adjacent Cu wirings M1W, the interlayer insulating film INS2 has a damage layer DM1 on its surface, and has an electric field relaxation layer ER1 having a higher nitrogen concentration than a nitrogen concentration of the damage layer DM1 at a position deeper than the damage layer DM1.

Abstract translation: 半导体器件包括层间绝缘膜INS2，形成在层间绝缘膜INS2中的相邻的Cu布线M1W和与层间绝缘膜INS2的表面接触的绝缘阻挡膜BR1和Cu布线M1W和盖的表面 层间绝缘膜INS2和Cu布线M1W。 在相邻的Cu配线M1W之间，层间绝缘膜INS2在其表面具有损伤层DM1，并且在比损伤深的位置具有比损伤层DM1的氮浓度高的氮浓度的电场缓和层ER1 层DM1。

公开(公告)号：US20150228586A1

公开(公告)日：2015-08-13

申请号：US14381572

申请日：2013-11-08

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tatsuya Usami ,  Yukio Miura ,  Hideaki Tsuchiya

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/263 ,  H01L21/265 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L23/528 ,  H01L21/02074 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/263 ,  H01L21/265 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/321 ,  H01L21/768 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76859 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes an interlayer insulating film INS2, adjacent Cu wirings M1W formed in the interlayer insulating film INS2, and an insulating barrier film BR1 which is in contact with a surface of the interlayer insulating film INS2 and surfaces of the Cu wirings M1W and covers the interlayer insulating film INS2 and the Cu wirings M1W. Between the adjacent Cu wirings M1W, the interlayer insulating film INS2 has a damage layer DM1 on its surface, and has an electric field relaxation layer ER1 having a higher nitrogen concentration than a nitrogen concentration of the damage layer DM1 at a position deeper than the damage layer DM1.

Abstract translation: 半导体器件包括层间绝缘膜INS2，形成在层间绝缘膜INS2中的相邻的Cu布线M1W和与层间绝缘膜INS2的表面接触的绝缘阻挡膜BR1和Cu布线M1W和盖的表面 层间绝缘膜INS2和Cu布线M1W。 在相邻的Cu配线M1W之间，层间绝缘膜INS2在其表面具有损伤层DM1，并且在比损伤深的位置具有比损伤层DM1的氮浓度高的氮浓度的电场缓和层ER1 层DM1。

公开(公告)号：US20160172298A1

公开(公告)日：2016-06-16

申请号：US15047623

申请日：2016-02-18

Applicant: Renesas Electronics Corporation

Inventor： Tatsuya Usami ,  Yukio Miura ,  Hideaki Tsuchiya

IPC: H01L23/522 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L21/02074 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/263 ,  H01L21/265 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/321 ,  H01L21/768 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76859 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes an interlayer insulating film INS2, adjacent Cu wirings M1W formed in the interlayer insulating film INS2, and an insulating barrier film BR1 which is in contact with a surface of the interlayer insulating film INS2 and surfaces of the Cu wirings M1W and covers the interlayer insulating film INS2 and the Cu wirings M1W. Between the adjacent Cu wirings M1W, the interlayer insulating film INS2 has a damage layer DM1 on its surface, and has an electric field relaxation layer ER1 having a higher nitrogen concentration than a nitrogen concentration of the damage layer DM1 at a position deeper than the damage layer DM1.