公开(公告)号：US20170250458A1

公开(公告)日：2017-08-31

申请号：US15443636

申请日：2017-02-27

Applicant: ROHM CO., LTD. ,  OSAKA UNIVERSITY

Inventor： Sebastian DIEBOLD ,  Masayuki FUJITA ,  Tadao NAGATSUMA ,  Jaeyoung KIM ,  Toshikazu MUKAI ,  Kazuisao TSURUDA

IPC: H01Q1/22 ,  H01Q15/14 ,  H01Q3/26 ,  H01Q5/335

CPC classification number: H01Q1/2283 ,  H01Q1/48 ,  H01Q3/2676 ,  H01Q5/335 ,  H01Q9/28 ,  H01Q9/285 ,  H01Q15/14

Abstract: A THz device includes: an antenna electrode capable of transmitting and receiving a THz wave to free space; first transmission lines capable of transmitting the THz wave, the first transmission lines respectively connected to the antenna electrodes; an active element of which a main electrode is connected to each of the first transmission lines; second transmission lines capable of transmitting the THz wave, the second transmission lines connected to the first active device; pad electrodes respectively connected to the second transmission lines; and a low-pass filter with respect to the THz wave, the low-pass filter connected to the pad electrodes, wherein impedance matching of between the antenna electrode and the active element is performed by an impedance conversion of the first transmission lines. The THz device is capable of the high-efficiency matching between the active element and the antenna due to the impedance conversion effect of the transmission line.

公开(公告)号：US20160178843A1

公开(公告)日：2016-06-23

申请号：US14644175

申请日：2015-03-10

Applicant: ROHM CO., LTD. ,  OSAKA UNIVERSITY

Inventor： Masayuki FUJITA ,  Tadao NAGATSUMA ,  Kazuisao TSURUDA ,  Dai ONISHI

IPC: G02B6/122 ,  H01L33/04 ,  H01L33/00 ,  G02B6/12 ,  G02B6/124

CPC classification number: G02B6/1225 ,  G02B6/124 ,  G02B6/34 ,  G02B2006/12121 ,  G02B2006/12123 ,  G02B2006/12126 ,  H01Q1/00 ,  H01S2302/02

Abstract: The THz-wave device comprises: a 2D-PC slab; lattice points periodically arranged in the 2D-PC slab, the lattice points for diffracting the THz waves in PBG frequencies of photonic band structure of the 2D-PC slab in order to prohibit existence in a plane of the 2D-PC; a 2D-PC waveguide disposed in the 2D-PC slab and formed with a line defect of the lattice points; and an RTD device disposed on the 2D-PC waveguide.

Abstract translation: 太赫兹波装置包括：2D-PC板; 定点排列在2D-PC板中的格点，用于衍射2D-PC板的光子带结构的PBG频率中的THz波的格点，以禁止存在于2D-PC的平面中; 2D-PC波导，设置在2D-PC板中并形成有格点的线缺陷; 以及设置在2D-PC波导上的RTD装置。

公开(公告)号：US20240133729A1

公开(公告)日：2024-04-25

申请号：US18403241

申请日：2024-01-03

Applicant: ROHM CO., LTD.

Inventor： Kazuisao TSURUDA

IPC: G01F23/292

CPC classification number: G01F23/292

Abstract: This detection device is provided with a transmission unit that generates electromagnetic waves, a compartment bottom portion by which electromagnetic waves are reflected, and a reception unit that receives electromagnetic waves. The transmission unit emits electromagnetic waves to a detection target region through a partition member for partitioning the detection target region from the transmission unit and the reception unit. The compartment bottom portion is provided on the optical path of the electromagnetic waves emitted from the transmission unit and reflects electromagnetic waves having passed through at least a portion of the detection target region. The reception unit receives electromagnetic waves that have been reflected by the compartment bottom portion and are inputted from the detection target region through the partition member.

公开(公告)号：US20210066811A1

公开(公告)日：2021-03-04

申请号：US16999029

申请日：2020-08-20

Applicant: ROHM Co., Ltd.

Inventor： Kazuisao TSURUDA

IPC: H01Q15/16 ,  H01L29/20 ,  H01L23/66

Abstract: The task of the present invention is to achieve gain enhancement.
A terahertz device (10) of the present invention includes a terahertz element (20) generating an electromagnetic wave, a dielectric (50) including a dielectric material and surrounding the terahertz element (20), a gas space (92) including a gas, and a reflecting film (82) serving as a reflecting portion. The reflecting film (82) includes a portion opposing the terahertz element (20) through the dielectric (50) and the gas space (92) and reflecting the electromagnetic wave toward a direction, wherein the electromagnetic wave is generated from the terahertz element (20) and transmitted through the dielectric (50) and the gas space (92). In addition, the refractive index of the dielectric (50) is lower than the refractive index of the terahertz element (20) and is higher than the refractive index of the gas in the gas space (92).

公开(公告)号：US20170271774A1

公开(公告)日：2017-09-21

申请号：US15614700

申请日：2017-06-06

Applicant: ROHM CO., LTD.

Inventor： Toshikazu MUKAI ,  Kazuisao TSURUDA

IPC: H01Q9/16 ,  G01R31/28 ,  G01R31/311 ,  G02F1/39 ,  G02F2/02 ,  G01N21/3581 ,  H03B7/08

CPC classification number: H01Q9/16 ,  G01N21/3581 ,  G01R31/2831 ,  G01R31/311 ,  G02F1/39 ,  G02F2/02 ,  G02F2001/3505 ,  G02F2203/13 ,  H03B7/08 ,  H03B2200/0084

Abstract: THz device includes: a semiconductor substrate; a first semiconductor layer disposed on the semiconductor substrate; an active element formed by being laminated on the first semiconductor layer; a second electrode connected to the first semiconductor layer to be connected to a cathode K of the active element, the second electrode disposed on the semiconductor substrate; a first electrode connected to an anode A of the active element, the first electrode disposed on the semiconductor substrate to be opposite to the second electrode; a rear reflector metal layer disposed on a back side surface of the semiconductor substrate opposite to the first semiconductor layer, wherein the active element forms a resonator between the second and first electrodes, wherein electromagnetic waves are reflected on the rear reflector metal layer, and electromagnetic waves have a surface light-emission radiating pattern or surface light-receiving pattern in a vertical direction to the semiconductor substrate.

公开(公告)号：US20240297444A1

公开(公告)日：2024-09-05

申请号：US18006804

申请日：2021-07-13

Applicant: ROHM CO., LTD.

Inventor： Kazuisao TSURUDA

IPC: H01Q19/13 ,  H01Q19/15 ,  H03B7/08

CPC classification number: H01Q19/132 ,  H01Q19/15 ,  H03B7/08 ,  H03B2200/0084

Abstract: A terahertz device includes: a support substrate; a terahertz element that is mounted to the support substrate and that emits an electromagnetic wave in a terahertz band; and a reflection body that is disposed on the opposite side to an element rear surface with respect to an element main surface in a z direction and at an interval in the z direction from the element main surface and that has a reflection surface for reflecting, in a direction crossing the z direction, an electromagnetic wave emitted in the z direction by the terahertz element.

公开(公告)号：US20220236178A1

公开(公告)日：2022-07-28

申请号：US17597061

申请日：2020-06-30

Applicant: ROHM CO., LTD.

Inventor： Tomoichiro TOYAMA ,  Kazuisao TSURUDA

IPC: G01N21/3581 ,  H01Q9/16 ,  H03B7/08 ,  H01L29/861

Abstract: A terahertz device includes a base member, a terahertz element, an antenna base, and a reflection film. The terahertz element is mounted on the base member and configured to generate an electromagnetic wave. The antenna base is located opposing the base member and includes an antenna surface. The reflection film is formed on the antenna surface to reflect at least part of the electromagnetic wave generated by the terahertz element in one direction.

公开(公告)号：US20210063305A1

公开(公告)日：2021-03-04

申请号：US16983443

申请日：2020-08-03

Applicant: ROHM CO., LTD.

Inventor： Kazuisao TSURUDA

IPC: G01N21/3581 ,  G02F2/02 ,  G01R31/28

Abstract: There is provided a terahertz device including: a terahertz element configured to generate an electromagnetic wave; a reflection film provided at a position facing the terahertz element and configured to reflect the electromagnetic wave generated from the terahertz element in one direction; and an encapsulating material configured to encapsulate the terahertz element and the reflection film.

公开(公告)号：US20240332226A1

公开(公告)日：2024-10-03

申请号：US18739921

申请日：2024-06-11

Applicant: ROHM CO., LTD.

Inventor： Yosuke NISHIDA ,  Kazuisao TSURUDA

IPC: H01L23/66 ,  H01P3/127 ,  H01Q5/22

CPC classification number: H01L23/66 ,  H01P3/127 ,  H01Q5/22 ,  H01L2223/6611 ,  H01L2223/6627 ,  H01L2223/6677

Abstract: A semiconductor device includes a semiconductor element, a base and a first waveguide. The semiconductor element oscillates and radiates electromagnetic waves. The base includes a retaining cavity that retains the semiconductor element. The first waveguide includes a first waveguide passage connected to the retaining cavity. The first waveguide passage is configured to transmit the electromagnetic waves in a fundamental mode. The retaining cavity is a resonant cavity in which the electromagnetic waves resonate in a high-order mode.

公开(公告)号：US20220302878A1

公开(公告)日：2022-09-22

申请号：US17832209

申请日：2022-06-03

Applicant: ROHM CO., LTD.

Inventor： Kazuisao TSURUDA ,  Hideaki YANAGIDA

IPC: H03B7/08 ,  H01L23/14 ,  H01L23/28 ,  H01L23/498 ,  H01L23/538 ,  H01L23/66 ,  H01P1/20

Abstract: Terahertz device A1 includes first resin layer 21, columnar conductor 31, wiring layer 32, terahertz element 11, second resin layer 22, and external electrode 40. Resin layer 21 includes first resin layer obverse face 211 and first resin layer reverse face 212. Columnar conductor 31 includes first conductor obverse face 311 and first conductor reverse face 312, penetrating first resin layer 21 in z-direction. Wiring layer 32 spans between first resin layer obverse face 221 and first conductor obverse face 311. Terahertz element 11 includes element obverse face 111 and element reverse face 112, and converts between terahertz wave and electric energy. Second resin layer 22 includes second resin layer obverse face 221 and second resin layer reverse face 222, and covers wiring layer 32 and terahertz element 11. External electrode 40, disposed offset in a direction first resin layer reverse face 222 faces with respect to first resin layer 32, is electrically connected to columnar conductor 31. Terahertz element 11 is conductively bonded to wiring layer 32.