公开(公告)号：US20150155684A1

公开(公告)日：2015-06-04

申请号：US14618483

申请日：2015-02-10

Applicant: ROHM CO., LTD.

Inventor： Junichi KASHIWAGI ,  Kuniyoshi OKAMOTO ,  Taketoshi TANAKA ,  Masashi KUBOTA

IPC: H01S5/02 ,  H01S5/343 ,  H01S5/22

CPC classification number: H01S5/0202 ,  B82Y20/00 ,  H01S5/0287 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2301/176

Abstract: A method for manufacturing a semiconductor laser device includes preparing an original substrate having a plurality of semiconductor laser device regions arrayed in a matrix, and a plurality of ridges formed in stripes so as to pass through each of the plurality of semiconductor laser device regions that are aligned in one direction. A scribing process is applied to the original substrate along cutting lines set along boundaries of the plurality of semiconductor laser device regions from a rear surface at an opposite side of a top surface at which the ridges are formed. A blade is applied to the original substrate along each cutting line from the top surface of the original substrate for dividing the original substrate along the cutting line.

Abstract translation: 一种半导体激光装置的制造方法，其特征在于，准备具有排列成矩阵状的多个半导体激光装置区域的原版基板，以及形成为条状的多个脊，以穿过所述多个半导体激光装置区域 在一个方向对齐。 沿着形成有脊的上表面的相对侧的后表面沿着沿着多个半导体激光器装置区域的边界设置的切割线，对原始基板进行划线处理。 沿着原始基板的顶表面沿着每个切割线将原始基板施加到原始基板上，以沿着切割线分割原始基板。

公开(公告)号：US20200067407A1

公开(公告)日：2020-02-27

申请号：US16611815

申请日：2018-05-10

Applicant: Rohm Co., Ltd.

Inventor： Junichi KASHIWAGI ,  Atsushi Yamaguchi ,  Yohei MORIYAMA ,  Yuta OKAWAUCHI ,  Yusuke NAKAKOHARA ,  Ken Nakahara

IPC: H02M3/156 ,  H02M3/335

Abstract: A ripple injection circuit equipped with: a capacitor that passes a frequency component of an input voltage or a frequency component of an output voltage and that generates a first ripple voltage having a first ripple component; and an integration circuit that integrates a comparison result signal and that generates a second ripple voltage having a second ripple component. The first ripple component and the second ripple component are added to a feedback voltage.

公开(公告)号：US20150036709A1

公开(公告)日：2015-02-05

申请号：US14519088

申请日：2014-10-20

Applicant: ROHM CO., LTD.

Inventor： Shinya TAKADO ,  Junichi KASHIWAGI

IPC: H01S5/343 ,  H01S5/32 ,  H01S5/042

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3063 ,  H01S5/3213 ,  H01S5/3216

Abstract: A semiconductor laser device generates blue-violet light with an emission wavelength of 400 to 410 nm. The device includes an n-type group III nitride semiconductor layer, an active layer laminated on the n-type semiconductor layer and having an InGaN quantum well layer, a p-type group III nitride semiconductor layer laminated on the active layer, and a transparent electrode contacting the p-type semiconductor layer and serving as a clad. The n-type semiconductor layer includes an n-type clad layer and an n-type guide layer disposed between the clad layer and the active layer. The guide layer includes a superlattice layer in which an InGaN layer and an AlxGa1-xN layer (0≦X

Abstract translation: 半导体激光装置产生发射波长为400〜410nm的蓝紫色光。 该器件包括n型III族氮化物半导体层，层叠在n型半导体层上并具有InGaN量子阱层的有源层，层叠在有源层上的p型III族氮化物半导体层和透明 电极与p型半导体层接触并用作包层。 n型半导体层包括n型覆盖层和设置在覆盖层和有源层之间的n型引导层。 引导层包括其中周期性地层叠InGaN层和Al x Ga 1-x N层（0＆lt; 1lE; X <1）的超晶格层，超晶格层与活性层接触并具有2.6或更低的平均折射率。 InGaN层的In组成低于InGaN量子阱层的In组成。

公开(公告)号：US20160064488A1

公开(公告)日：2016-03-03

申请号：US14935343

申请日：2015-11-06

Applicant: ROHM CO., LTD.

Inventor： Shinya TAKADO ,  Norikazu ITO ,  Junichi KASHIWAGI ,  Hirokuni ASAMIZU

IPC: H01L29/15 ,  H01L29/207 ,  H01L29/205 ,  H01L29/778

CPC classification number: H01L29/155 ,  H01L29/157 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/7783

Abstract: A nitride based semiconductor device includes: a substrate; a first buffer layer disposed on the substrate; a second buffer layer disposed on the first buffer layer; a third buffer layer disposed on the second buffer layer, the third buffer layer including an AlGaN-based nitride semiconductor; a fourth buffer layer disposed on the third buffer layer, the fourth buffer layer including a GaN-based nitride semiconductor; a barrier layer disposed on the fourth buffer layer, the barrier layer including an AlGaN-based nitride semiconductor; and a source electrode and a drain electrode, each disposed on the barrier layer, and a gate electrode disposed between the source electrode and the drain electrode, wherein the third buffer layer is subjected to lattice relaxation. There can be provided a nitride based semiconductor device capable of reducing a leakage current and improving breakdown capability.

Abstract translation: 氮化物基半导体器件包括：衬底; 设置在所述基板上的第一缓冲层; 设置在所述第一缓冲层上的第二缓冲层; 设置在所述第二缓冲层上的第三缓冲层，所述第三缓冲层包括AlGaN基氮化物半导体; 设置在第三缓冲层上的第四缓冲层，第四缓冲层包括GaN基氮化物半导体; 设置在所述第四缓冲层上的阻挡层，所述阻挡层包括AlGaN基氮化物半导体; 以及设置在阻挡层上的源电极和漏电极以及设置在源电极和漏电极之间的栅电极，其中第三缓冲层受到晶格弛豫。 可以提供能够减少漏电流并提高击穿能力的氮化物基半导体器件。