公开(公告)号：US20240030112A1

公开(公告)日：2024-01-25

申请号：US18480186

申请日：2023-10-03

Applicant: ROHM CO., LTD.

Inventor： Hiroto SAKAI ,  Yuta OKAWAUCHI ,  Ryosuke FUKUDA ,  Xiaopeng WU ,  Kohei TANIKAWA

IPC: H01L23/495 ,  H01L23/00

CPC classification number: H01L23/49575 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/40137 ,  H01L2224/48175 ,  H01L2224/73221

Abstract: A semiconductor device includes two semiconductor elements for switching, a first conductor electrically connecting the second electrodes of the two semiconductor elements, a second conductor electrically connecting the second electrodes, and a first power terminal electrically connected to the first conductor and the second electrodes of the first semiconductor elements. The two first semiconductor element are connected in parallel with each other. A first conduction path and a second conduction path are provided between the second electrodes of the two semiconductor elements and extend through the first conductor and the second conductor, respectively. The first conduction path and the second conduction path are at least partially in parallel. The combined inductance of the first conduction path and the second conduction path is smaller than the inductance of the first conduction path.

公开(公告)号：US20240332271A1

公开(公告)日：2024-10-03

申请号：US18742606

申请日：2024-06-13

Applicant: ROHM CO., LTD.

Inventor： Hiroto SAKAI ,  Yuta OKAWAUCHI ,  Tetsuo TATEISHI

IPC: H01L25/16 ,  H01L23/00 ,  H01L23/049 ,  H01L23/31 ,  H01L23/367 ,  H01L23/373 ,  H01L25/07

CPC classification number: H01L25/16 ,  H01L23/049 ,  H01L23/3121 ,  H01L23/367 ,  H01L23/3735 ,  H01L24/48 ,  H01L25/072 ,  H01L2224/48225 ,  H01L2924/10272 ,  H01L2924/1207 ,  H01L2924/13091 ,  H01L2924/30101 ,  H01L2924/30107

Abstract: A semiconductor device includes two semiconductor elements with a respective switching operation being controlled depending on a first driving signal input to a third electrode. A first conductor and a second conductor are electrically interposed between the third electrodes of the two semiconductor elements. The first conductor is electrically connected to a signal terminal. The electrical connection between the third electrodes of the two semiconductor elements includes a first conduction path through the first conductor and a second conduction path through the second conductor. An inductance value of the second conduction path is smaller than an inductance value of the first conduction path. A resistance value of the second conduction path is larger than a resistance value of the first conduction path.

公开(公告)号：US20220021299A1

公开(公告)日：2022-01-20

申请号：US17294112

申请日：2019-11-29

Applicant: Rohm Co., Ltd.

Inventor： Tatsuya MIYAZAKI ,  Yuta OKAWAUCHI ,  Hirotaka OTAKE ,  Mamoru TSURUYA

IPC: H02M1/42 ,  H02M7/162 ,  H02M1/00 ,  H02M3/335 ,  H02M7/5395

Abstract: A control device 100 is used as a principle controller of an electric power conversion device 1 having a switch circuit 10 including transistors M1-M4. The control device: subtracts, from a reference signal REF set in accordance with an operating mode MODE (PFC/INV) of the electric power conversion device 1, a product signal (K×I) obtained by multiplying an object-of-control electric current I of the switch circuit 10 by a prescribed coefficient K; and generates, on the basis of the computation result (=REF−K×I), control signals S1-S4 (and consequently, gate signals G1-G4) for the transistors M1-M4.

公开(公告)号：US20210083563A1

公开(公告)日：2021-03-18

申请号：US16771995

申请日：2018-11-16

Applicant: Rohm Co., Ltd.

Inventor： Yuta OKAWAUCHI ,  Yusuke NAKAKOHARA ,  Ken NAKAHARA

IPC: H02M1/08 ,  H02M3/158 ,  H03K17/0412

Abstract: A gate drive circuit, which drives a gate of a first transistor, includes a first switch on a high potential side and a second switch on a low potential side connected in series at a second connection node between a high potential end and a low potential end of a series connection structure, constituted of a first voltage source and a second voltage source connected in series at a first connection node; and a third switch and an inductor connected in series between the first connection node and the second connection node. The gate of the first transistor can be electrically connected to the second connection node

公开(公告)号：US20240186256A1

公开(公告)日：2024-06-06

申请号：US18440470

申请日：2024-02-13

Applicant: ROHM CO., LTD.

Inventor： Hiroto SAKAI ,  Yuta OKAWAUCHI

IPC: H01L23/538 ,  H01L23/00 ,  H01L25/07

CPC classification number: H01L23/5386 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265

Abstract: A semiconductor device includes two first semiconductor elements, a first conductor, and a first power terminal. Each of the two semiconductor elements includes a first electrode, a second electrode, and a third electrode and is controlled to switch between an on-state and an off-state by a first drive signal inputted to the third electrode. The first conductor is electrically interposed between the first electrodes of the two first semiconductor elements. The first power terminal is electrically connected to the first conductor and electrically conducting to the first electrodes of the two first semiconductor elements. The two first semiconductor elements are electrically connected in parallel. The first conductor is disposed to avoid being located on a portion of a first line segment connecting centers of the two first semiconductor elements as viewed in a thickness direction of the first conductor.

公开(公告)号：US20240014193A1

公开(公告)日：2024-01-11

申请号：US18252980

申请日：2021-11-12

Applicant: ROHM CO., LTD.

Inventor： Hiroto SAKAI ,  Yuta OKAWAUCHI ,  Takukazu OTSUKA ,  Ken NAKAHARA

IPC: H01L25/16 ,  H01L23/498 ,  H01L23/00

CPC classification number: H01L25/16 ,  H01L23/49838 ,  H01L24/04 ,  H01L24/05 ,  H01L24/06 ,  H01L24/20 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/04105 ,  H01L2224/05082 ,  H01L2224/05655 ,  H01L2224/05644 ,  H01L2224/05582 ,  H01L2224/05664 ,  H01L2224/05583 ,  H01L2224/05553 ,  H01L2224/05552 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/06181 ,  H01L2224/211 ,  H01L2224/29139 ,  H01L2224/32225 ,  H01L2224/37147 ,  H01L2224/37013 ,  H01L2224/40499 ,  H01L2924/01047 ,  H01L2224/40101 ,  H01L2224/40137 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48229 ,  H01L2224/48106 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/73263 ,  H01L2224/73221 ,  H01L2924/10272 ,  H01L2924/13055 ,  H01L2924/13091

Abstract: A semiconductor device includes: a substrate having an obverse surface; a first wiring layer on the obverse surface; a second wiring layer on the obverse surface, separated from the first wiring layer; a first semiconductor element having mutually opposite first obverse electrode and first reverse electrode, with the first reverse electrode bonded to the first wiring layer; a second semiconductor element having mutually opposite second obverse electrode and second reverse electrode, with the second reverse electrode bonded to the second wiring layer; and a conductive member separated from the substrate and bonded to the first and the second obverse electrodes. The first obverse electrode and the second obverse electrode have different polarities. The substrate includes an exposed portion between the first wiring layer and the second wiring layer. The conductive member overlaps with the exposed portion as viewed in the thickness direction of the substrate.

公开(公告)号：US20200350814A1

公开(公告)日：2020-11-05

申请号：US16962015

申请日：2018-12-11

Applicant: Rohm Co., Ltd.

Inventor： Yusuke NAKAKOHARA ,  Yuta OKAWAUCHI ,  Ken NAKAHARA ,  Shinichiro NAGAI ,  Yuuki OOTABARA

IPC: H02M1/08 ,  H02M3/07 ,  H02M7/537 ,  H03K17/687

Abstract: A negative voltage generation circuit 200 includes a first DC voltage source 201 having a positive terminal connected to a first node N1 (Vin), a first diode 202 having a cathode connected to a negative terminal of the first DC voltage source 201 and an anode connected to an output terminal of a first negative voltage VC1 (fourth node N4), and a first capacitor 204 having a first terminal connected to an output terminal of the first negative voltage VC1 and a second terminal connected to a second node N2 (Vs_high), so as to supply the first negative voltage VC1 to a first driver 20 that performs switching control of a first NMOSFET 11 (first switch element) connected between the first node N1 (Vin) and the second node N2 (Vs_high).

公开(公告)号：US20240006123A1

公开(公告)日：2024-01-04

申请号：US18253163

申请日：2021-11-15

Applicant: ROHM CO., LTD.

Inventor： Yuta OKAWAUCHI ,  Yasuo KANETAKE

IPC: H01G4/30 ,  H01G4/232 ,  H02M7/48 ,  H01G4/08 ,  H01G4/005

CPC classification number: H01G4/30 ,  H01G4/232 ,  H01G4/005 ,  H01G4/08 ,  H02M7/48

Abstract: A multilayer capacitor includes a stacked body, a first external electrode, and a second external electrode. The stacked body includes a plurality of laminate sections and a plurality of insulating layers arranged alternately in z direction. Each laminate section includes a first conductor, a second conductor, a third conductor, and a dielectric member. The first conductor connects to the first external electrode, and the second conductor connects to the second external electrode. The third conductor includes a first part and a second part. The dielectric member has a first surface and a second surface spaced apart from each other in the z direction. The first surface is in contact with at least the first conductor, and the second surface is in contact with at least the first part. The laminate sections include two adjacent laminate sections in the z direction, and the first surfaces or the second surfaces of these two laminate sections face each other in the z direction.

公开(公告)号：US20230360838A1

公开(公告)日：2023-11-09

申请号：US18246501

申请日：2021-09-06

Applicant: ROHM CO., LTD.

Inventor： Tatsuya MIYAZAKI ,  Yuta OKAWAUCHI

IPC: H01F27/255 ,  H01L25/16 ,  H01F37/00 ,  H01F27/28

CPC classification number: H01F27/255 ,  H01L25/16 ,  H01F37/00 ,  H01F27/2804 ,  H01F2027/2809

Abstract: A circuit component includes a resin composite body and a conductor. The resin composite body is composed of a resin material and a plurality of magnetic particles contained in the resin material. The conductor is formed on the surface of the resin composite body. The magnetic particles are dispersed in the resin material.

公开(公告)号：US20200313537A1

公开(公告)日：2020-10-01

申请号：US16900336

申请日：2020-06-12

Applicant: ROHM CO., LTD.

Inventor： Yuta OKAWAUCHI ,  Yusuke NAKAKOHARA ,  Ken Nakahara

IPC: H02M1/08 ,  H02M3/158 ,  H03K17/687

Abstract: A gate drive circuit, which drives a gate of a first transistor, includes a first switch on a high potential side and a second switch on a low potential side connected in series at a second connection node between a high potential end and a low potential end of a series connection structure, constituted of a first voltage source and a second voltage source connected in series at a first connection node; and a third switch and an inductor connected in series between the first connection node and the second connection node. The gate of the first transistor can be electrically connected to the second connection node.