公开(公告)号：US12021012B2

公开(公告)日：2024-06-25

申请号：US17044658

申请日：2019-04-11

申请人： ROHM CO., LTD.

发明人： Kazuki Okuyama ,  Shuntaro Takahashi ,  Motoharu Haga ,  Shingo Yoshida ,  Kazuhisa Kumagai ,  Hajime Okuda

IPC分类号： H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L21/765 ,  H01L23/00 ,  H01L23/31 ,  H01L23/34 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L23/49562 ,  H01L21/4825 ,  H01L21/565 ,  H01L21/765 ,  H01L23/3114 ,  H01L23/34 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49582 ,  H01L24/48 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7813 ,  H01L2224/48245 ,  H01L2224/48472 ,  H01L2924/13091

摘要： A semiconductor device includes a semiconductor element and a first connection member. The semiconductor element includes a substrate and an electrode pad. The substrate includes a transistor formation region, in which a transistor is formed and which is shaped to be non-quadrangular. The electrode pad is located on the transistor formation region. The first connection member is connected to the electrode pad at one location. The electrode pad is arranged to cover a center of gravity of the transistor formation region in a plan view of the electrode pad. In the plan view, a connection region in which the first connection member is connected to the electrode pad includes a center of gravity position of the transistor formation region.