公开(公告)号：US12183663B2

公开(公告)日：2024-12-31

申请号：US18510204

申请日：2023-11-15

Applicant: ROHM CO., LTD.

Inventor： Kazuki Okuyama ,  Shuntaro Takahashi ,  Motoharu Haga ,  Shingo Yoshida ,  Kazuhisa Kumagai ,  Hajime Okuda

IPC: H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L21/765 ,  H01L23/00 ,  H01L23/31 ,  H01L23/34 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a semiconductor element and a first connection member. The semiconductor element includes a substrate and an electrode pad. The substrate includes a transistor formation region, in which a transistor is formed and which is shaped to be non-quadrangular. The electrode pad is located on the transistor formation region. The first connection member is connected to the electrode pad at one location. The electrode pad is arranged to cover a center of gravity of the transistor formation region in a plan view of the electrode pad. In the plan view, a connection region in which the first connection member is connected to the electrode pad includes a center of gravity position of the transistor formation region.

公开(公告)号：US12021012B2

公开(公告)日：2024-06-25

申请号：US17044658

申请日：2019-04-11

Applicant: ROHM CO., LTD.

Inventor： Kazuki Okuyama ,  Shuntaro Takahashi ,  Motoharu Haga ,  Shingo Yoshida ,  Kazuhisa Kumagai ,  Hajime Okuda

IPC: H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L21/765 ,  H01L23/00 ,  H01L23/31 ,  H01L23/34 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L23/49562 ,  H01L21/4825 ,  H01L21/565 ,  H01L21/765 ,  H01L23/3114 ,  H01L23/34 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49582 ,  H01L24/48 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7813 ,  H01L2224/48245 ,  H01L2224/48472 ,  H01L2924/13091

Abstract: A semiconductor device includes a semiconductor element and a first connection member. The semiconductor element includes a substrate and an electrode pad. The substrate includes a transistor formation region, in which a transistor is formed and which is shaped to be non-quadrangular. The electrode pad is located on the transistor formation region. The first connection member is connected to the electrode pad at one location. The electrode pad is arranged to cover a center of gravity of the transistor formation region in a plan view of the electrode pad. In the plan view, a connection region in which the first connection member is connected to the electrode pad includes a center of gravity position of the transistor formation region.

公开(公告)号：US10163850B2

公开(公告)日：2018-12-25

申请号：US15707632

申请日：2017-09-18

Applicant: ROHM CO., LTD.

Inventor： Motoharu Haga ,  Shingo Yoshida ,  Yasumasa Kasuya ,  Toichi Nagahara ,  Akihiro Kimura ,  Kenji Fujii

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/495 ,  B23K20/00 ,  B23K20/10 ,  B23K20/24 ,  H01L21/56

Abstract: A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

公开(公告)号：US09780069B2

公开(公告)日：2017-10-03

申请号：US14664168

申请日：2015-03-20

Applicant: ROHM CO., LTD.

Inventor： Motoharu Haga ,  Shingo Yoshida ,  Yasumasa Kasuya ,  Toichi Nagahara ,  Akihiro Kimura ,  Kenji Fujii

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/495 ,  B23K20/00 ,  B23K20/10 ,  B23K20/24 ,  H01L21/56

CPC classification number: H01L24/85 ,  B23K20/005 ,  B23K20/10 ,  B23K20/24 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49582 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/83 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48451 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48847 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/78303 ,  H01L2224/78307 ,  H01L2224/78309 ,  H01L2224/83 ,  H01L2224/8314 ,  H01L2224/83192 ,  H01L2224/83439 ,  H01L2224/838 ,  H01L2224/85 ,  H01L2224/85045 ,  H01L2224/85051 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/8592 ,  H01L2224/85986 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01066 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01204 ,  H01L2924/01205 ,  H01L2924/01206 ,  H01L2924/013 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/10162 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19107 ,  H01L2924/20752 ,  H01L2924/20757 ,  H01L2924/3512 ,  H01L2924/01026 ,  H01L2924/00 ,  H01L2924/2076 ,  H01L2924/207 ,  H01L2924/20753 ,  H01L2924/20756 ,  H01L2924/20758 ,  H01L2924/00015

Abstract: A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.