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Patent Agency Ranking
公开(公告)号：US20150340840A1
公开(公告)日：2015-11-26
申请号：US14815748
申请日：2015-07-31
Applicant: ROHM CO., LTD.
Inventor： Tsuguki NOMA , Minoru MURAYAMA , Satoshi UCHIDA , Tsutomu ISHIKAWA
CPC classification number: H01S5/223 , H01S5/221 , H01S5/2219 , H01S5/2227 , H01S5/2231 , H01S5/34326
Abstract: Provided is a semiconductor laser which has a low operating current and stably oscillates even for high-temperature output. The semiconductor laser is provided with a substrate (10); an n-type clad layer (12) arranged on the substrate (10); an active layer (13) arranged on the n-type clad layer (12); a p-type clad layer (14), which is arranged on the active layer (13) and composed of a compound containing Al and has a stripe-shaped ridge structure to be a current channel; a current block layer (16), which is arranged on the surface of the p-clad layer (14) excluding an upper surface of the ridge structure and composed of a compound containing Al and has an Al composition ratio not more than that of the p-type clad layer (14); and a light absorption layer (17), which is arranged on the current block layer (16) and absorbs light at the laser oscillation wavelength.
Abstract translation: 提供了即使对于高温输出也具有低工作电流并稳定地振荡的半导体激光器。 半导体激光器设置有衬底（10）; 布置在所述基板（10）上的n型覆盖层（12）; 布置在所述n型覆层（12）上的有源层（13）; p型覆盖层（14），其配置在有源层（13）上，由含有Al的化合物构成，具有条状的脊状结构成为电流通道; 布置在p包覆层（14）的表面上的电流阻挡层（16），除了脊结构的上表面，并且由含Al的化合物构成，Al组成比不大于 p型覆层（14）; 以及布置在当前阻挡层（16）上并吸收激光振荡波长的光的光吸收层（17）。
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公开(公告)号：US20210075192A1
公开(公告)日：2021-03-11
申请号：US16644810
申请日：2018-10-29
Applicant: ROHM CO., LTD.
Inventor： Masashi YAMAMOTO , Yuji TSUJI , Daiju TAKAMIZU , Minoru MURAYAMA
Abstract: A surface-emitting semiconductor laser includes a semiconductor laminated structure that includes a first-conductivity-type layer, an active layer, and a second-conductivity-type layer and in which light generated in the active layer is extracted as laser light from a side of the second-conductivity-type layer while resonating along a lamination direction of these layers, a current constriction layer in which the active layer and the second-conductivity-type layer are electrically connected together through an opening, an insulating layer that has translucency with respect to an emission wavelength of the active layer, a first electrode electrically connected to the first-conductivity-type layer, and a second electrode electrically connected to the second-conductivity-type layer, and, in the surface-emitting semiconductor laser, a part of the insulating layer is exposed from the second electrode, and the insulating layer exposed from the second electrode includes a first portion that has a first thickness and a second portion that has a second thickness to make output of light emitted from the active layer smaller than the first portion in comparison with the first thickness and that surrounds the first portion.
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公开(公告)号：US20170062703A1
公开(公告)日：2017-03-02
申请号：US15239444
申请日：2016-08-17
Applicant: ROHM CO., LTD.
Inventor： Satoshi NAKAGAWA , Minoru MURAYAMA
CPC classification number: G01R33/07 , H01L43/065 , H01L43/14
Abstract: A magneto-electric transducer includes: a substrate; a magnetic sensitive layer formed on the substrate; and a pair of input terminals and a pair of output terminals, which are electrically connected to the magnetic sensitive layer, wherein the magnetic sensitive layer includes a longitudinally extending input side region an output side region extending in a direction crossing the input side region, when viewed from top, wherein the output side region includes a first output side region protruding from one side of the input side region and a second output side region protruding from the other side of the input side region, and wherein the first output side region and the second output side region are configured to be asymmetrical with respect to arrangement of the input side region.
Abstract translation: 磁电换能器包括：基板; 形成在所述基板上的感光层; 以及一对输入端子和一对输出端子，其电连接到所述敏感层，其中所述感磁层包括沿与所述输入侧区域交叉的方向延伸的输出侧区域的纵向延伸的输入侧区域， 从顶部看，其中输出侧区域包括从输入侧区域的一侧突出的第一输出侧区域和从输入侧区域的另一侧突出的第二输出侧区域，并且其中第一输出侧区域和 第二输出侧区域被配置为相对于输入侧区域的布置是不对称的。
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公开(公告)号：US20240006854A1
公开(公告)日：2024-01-04
申请号：US18448568
申请日：2023-08-11
Applicant: ROHM CO., LTD.
Inventor： Minoru MURAYAMA , Masashi YAMAMOTO , Ryo TODO
CPC classification number: H01S5/18377 , H01S5/18347 , H01S5/04256
Abstract: A surface-emitting laser device includes a first-conductivity type substrate including a first main surface on one side and a second main surface on an opposite side, a first-conductivity type reflection layer laminated on the first main surface so as to be lower in concentration than the substrate, a first-conductivity type clad layer laminated on the reflection layer so as to be higher in concentration than the reflection layer, an active layer laminated on the clad layer, a second-conductivity type semiconductor layer laminated on the active layer, a first removal portion that is formed by digging down the semiconductor layer and the active layer so as to expose the clad layer and that demarcates a mesa structure having a plateau shape, a second removal portion that is formed by digging down the clad layer and the reflection layer from a bottom portion of the first removal portion so as to expose the substrate from a position distant from the mesa structure, and a bypass wiring that is electrically connected to the clad layer in the first removal portion and that is electrically connected to the substrate in the second removal portion.
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公开(公告)号：US20220190556A1
公开(公告)日：2022-06-16
申请号：US17605457
申请日：2020-04-17
Applicant: ROHM CO., LTD.
Inventor： Satohiro KIGOSHI , Yuki TANUMA , Gen MUTO , Minoru MURAYAMA , Okimoto KONDO , Chikoto IKEDA , Yusuke NAKAKOHARA
IPC: H01S5/042
Abstract: A semiconductor light emitting device includes a substrate, a common conductive portion formed on the substrate, a semiconductor light emitting element mounted on the common conductive portion, and an electronic component mounted on the common conductive portion and electrically connected to the semiconductor light emitting element by the common conductive portion. This structure shortens the conductive path between the semiconductor light emitting element and the electronic component, thereby reducing capacitance caused by the conductive path between the semiconductor light emitting element and the electronic component. Thus, while reducing parasitic capacitance, the semiconductor light emitting element and the electronic component are electrically connected.
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