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    Method and apparatus for CMP conditioning
    7.
    发明授权
    Method and apparatus for CMP conditioning 有权
    CMP调理方法和装置

    公开(公告)号：US09162344B2

    公开(公告)日：2015-10-20

    申请号：US13785845

    申请日：2013-03-05

    申请人： Rajeev Bajaj

    发明人： Rajeev Bajaj

    IPC分类号： B24B1/00 ,  B24B53/017 ,  B23K26/00 ,  B24B53/095

    CPC分类号： B24B53/017 ,  B23K26/3576 ,  B24B53/095

    摘要： A polishing pad conditioning apparatus includes a laser beam generating unit for providing a laser beam, a fluid delivery system for providing a fluid stream and a vacuum line for removing debris. The laser beam may directly impinge on a surface of a polishing pad thereby creating cutting action, while an atomized fluid stream provides cooling and pad debris along with fluid are removed thru the vacuum line. Alternatively, the laser beam may be combined with the atomized fluid stream in a region above the pad surface to substantially impart part of its energy to the fluid stream, generating high energy droplets which provide “cool” cutting action on the pad surface.

    摘要翻译： 抛光垫调节装置包括用于提供激光束的激光束产生单元，用于提供流体流的流体输送系统和用于去除碎屑的真空管线。 激光束可以直接冲击抛光垫的表面，从而产生切割作用，而雾化的流体流提供冷却和垫片碎屑以及流体通过真空管线被去除。 或者，激光束可以与垫表面上方的区域中的雾化流体流组合，以将其能量的一部分基本上赋予流体流，产生在焊盘表面上提供“冷”切割作用的高能量液滴。

    Electro-chemical mechanical planarization pad with uniform polish performance
    8.
    发明授权
    Electro-chemical mechanical planarization pad with uniform polish performance 有权
    电化学机械平面化垫具有均匀的抛光性能

    公开(公告)号：US07815778B2

    公开(公告)日：2010-10-19

    申请号：US11562310

    申请日：2006-11-21

    申请人： Rajeev Bajaj

    发明人： Rajeev Bajaj

    IPC分类号： B23H5/06 ,  B23H5/08 ,  B23H5/10 ,  C25F3/16 ,  C25F3/18 ,  C25F3/30

    CPC分类号： B24B37/20

    摘要： A polishing pad includes at least one conductive polishing element supported by a compressible under layer having conductive patterning therein, the conductive patterning adapted to permit coupling of a potential to the conductive polishing element; a guide plate above the compressible under layer, the guide plate having a hole through which the polishing element passes and further having a cathodic element connected thereto; and a slurry distribution layer adhered to the guide plate opposite the compressible under layer. The polishing pad may further include a proton exchange membrane placed over the cathodic element. A semiconductor wafer having a metal film thereon may be polished using the polishing pad by placing the wafer in contact with the polishing element, applying anodic current to the polishing element and cathodic current to the cathodic element, and polishing with an anodic solution. For copper films, a sulfuric acid-copper sulfate solution may be used.

    摘要翻译： 抛光垫包括由其中具有导电图案化的可压缩底层支撑的至少一个导电抛光元件，所述导电图案适于允许将电位耦合到导电抛光元件; 在可压缩底层上方的引导板，所述引导板具有用于抛光元件通过的孔，并且还具有连接到其上的阴极元件; 以及粘附到与可压缩底层相对的引导板的浆料分布层。 抛光垫还可以包括置于阴极元件上的质子交换膜。 可以使用抛光垫将晶片与抛光元件接触，向抛光元件施加阳极电流，向阴极元件施加阴极电流，并用阳极溶液抛光，可以抛光其上具有金属膜的半导体晶片。 对于铜膜，可以使用硫酸 - 硫酸铜溶液。

    Nanospring
    9.
    发明授权
    Nanospring 失效
    纳米螺旋

    公开(公告)号：US07759165B1

    公开(公告)日：2010-07-20

    申请号：US12395681

    申请日：2009-03-01

    申请人： Rajeev Bajaj

    发明人： Rajeev Bajaj

    IPC分类号： H01L21/00

    CPC分类号： B81C1/0019 ,  B81B2207/07

    摘要： A nanospring is formed by first forming a stack of alternating layers of materials which have different susceptibilities to a selective etch solution. The stack is formed over a substrate and is subsequently etched with a substantially non-isotropic etch to create a via having substantially straight sidewalls. The sidewalls of the via are exposed to the selective etch solution, thereby creating irregular sidewalls of the via. A metal film is conformally deposited within the via, and, after excess metal is removed, the stack of alternating layers of materials is etched to expose remaining portions of the conformably deposited film, which comprise the nanospring.

    摘要翻译： 通过首先形成具有与选择性蚀刻溶液不同的敏感性的交替层材料层来形成纳米纺丝。 堆叠形成在衬底上，随后用基本上非各向同性的蚀刻进行蚀刻，以形成具有基本上直的侧壁的通孔。 通孔的侧壁暴露于选择性蚀刻溶液，从而产生通孔的不规则侧壁。 在通孔内共形沉积金属膜，并且在去除多余的金属之后，蚀刻交替的材料层的叠层以暴露构成纳米弹簧的顺应沉积膜的剩余部分。

    POLISHING PAD AND METHOD OF USE
    10.
    发明申请
    POLISHING PAD AND METHOD OF USE 审中-公开
    抛光垫及其使用方法

    公开(公告)号：US20090266002A1

    公开(公告)日：2009-10-29

    申请号：US12431119

    申请日：2009-04-28

    申请人： Rajeev Bajaj

    发明人： Rajeev Bajaj

    IPC分类号： B24D3/00 ,  B29C45/00

    CPC分类号： B24B37/26 ,  B29C45/0001 ,  B29C45/0013 ,  B29K2059/00 ,  B29K2071/00 ,  B29K2075/00 ,  B29K2079/085

    摘要： Polishing pads of varying compositions for use in chemical mechanical planarization (CMP) and methods of manufacturing and using such pads. Examples of such polishing pads include two phases, one of which may be a high modulus, low wear material that maintains a stable texture when subject to a conditioning process (e.g., polyoxymethylene, Delrin, polyamide-imide (Torlon), polyetheretherketone (PEEK), and/or polysulfone), and the other of which may be a material having a polishing ability (e.g., a polyurethane material).

    摘要翻译： 用于化学机械平面化（CMP）的不同组成的抛光垫以及制造和使用这种垫的方法。 这种抛光垫的实例包括两个相，其中一个可以是在经受调节过程（例如，聚甲醛，Delrin，聚酰胺 - 酰亚胺（Torlon），聚醚醚酮（PEEK））时保持稳定织构的高模量，低磨损材料， ，和/或聚砜），另一种可以是具有抛光能力的材料（例如，聚氨酯材料）。