摘要:
A burnishing tool and a method of additively manufacturing components of the burnishing tool are provided. The burnishing tool includes a burnishing element for burnishing a workpiece. The burnishing element is positioned between an upper nozzle and a lower nozzle which are additively manufactured to define a plurality of internal fluid passageways for receiving, distributing, and discharging a burnishing fluid to facilitate cooling and/or lubrication of the burnishing element and/or the workpiece.
摘要:
A wafer is pressed against a fixed abrasive and brought into sliding contact with the fixed abrasive. Thus, the wafer is polished. A surface of the fixed abrasive is dressed so as to generate free abrasive particles thereon. A liquid or a gas, composed of a mixture of liquid or inert gas and pure water or chemical liquid, is ejected onto the surface of the fixed abrasive during or after the dressing process.
摘要:
To increase the service life of a grinding wheel which is intended for grinding the borders of spectacle lenses, wherein the wheel comprises a core wheel, preferably made of plastic, and a ring made of sintered metal with embedded diamond particles, a method comprising treating the grinding surface at least occasionally by a fluid jet under high pressure to clean the surface and keep it sharp. The cooling fluid used during grinding may be the fluid in the jet. It may be fed at lower pressure while higher pressure may be occasionally supplied.
摘要:
The present invention provides methods for making a pre-conditioned chemical mechanical (CMP) polishing pad having a pad surface microtexture effective for polishing comprising grinding the surface of the CMP polishing pad having a radius with a rotary grinder while it is held in place on a flat bed platen surface, the rotary grinder having a grinding surface disposed parallel to or substantially parallel to the surface of the flat bed platen and made of a porous abrasive material, wherein the resulting CMP polishing pad has a surface roughness of from 0.01 μm to 25 μm, Sq. The present invention also provides a CMP polishing pad having a series of visibly intersecting arcs on the polishing layer surface, the intersecting arcs having a radius of curvature equal to or greater than half of the radius of curvature of the pad and extending all the way around the surface of the pad in radial symmetry around the center point of the pad.
摘要:
A polishing pad conditioning apparatus includes a laser beam generating unit for providing a laser beam, a fluid delivery system for providing a fluid stream and a vacuum line for removing debris. The laser beam may directly impinge on a surface of a polishing pad thereby creating cutting action, while an atomized fluid stream provides cooling and pad debris along with fluid are removed thru the vacuum line. Alternatively, the laser beam may be combined with the atomized fluid stream in a region above the pad surface to substantially impart part of its energy to the fluid stream, generating high energy droplets which provide “cool” cutting action on the pad surface.
摘要:
A grinding device including a multi-wheel grindstone and an electrode arranged opposite to a grinding action surface of the multi-wheel grindstone with an interval, in which a work is ground and machined while the grinding action surface of the multi-wheel grindstone is electrolytic-dressed by supplying conductive machining fluid between an electrode action surface of the electrode and the grinding action surface of the multi-wheel grindstone, and applying a voltage between the multi-wheel grindstone and the electrode, wherein the electrode has a laminate body in which electrode plates whose electrode action surfaces are arranged so as to oppose the grinding action surface of each of the grinding wheels are alternately sandwiched by a plurality of insulating plates; and a flow passage for distributing the machining fluid supplied to between the grinding action surface and the electrode action surface is formed at the electrode plate and the insulating plate.
摘要:
A polishing cloth is dressed between polishing processes each for polishing a workpiece such as a semiconductor wafer. The polishing cloth is dressed while supplying a dressing liquid such as water during a dressing process, and an abrasive liquid for polishing a workpiece is supplied to the polishing cloth for a predetermined period of time prior to a polishing process. The predetermined period of time may be present within the dressing process and immediately precedes the polishing process, and the dressing process may be carried out while supplying the abrasive liquid to the polishing cloth. Alternatively, the predetermined period of time may be present between the dressing process and the polishing process.
摘要:
Disclosed is a chemical-mechanical wafer polishing device having an elastic membrane including a circular action plate portion, a membrane circumferential wall portion extending from a circumferential edge of the action plate portion along a direction perpendicular to a plate surface, and a chamber formed between the action plate portion and the membrane circumferential wall portion. The membrane includes a cooling channel portion having an action plate bottom surface section, and a supply penetration section penetrating the action plate portion such that one end is connected to the action plate bottom surface section and the other end is exposed to the upper side of the action plate portion. The chemical-mechanical wafer polishing device includes a cooling fluid supply portion having a cooling fluid supply tube connected to a free end of the supply penetration section, and providing a cooling fluid to the cooling channel portion.
摘要:
Disclosed is a chemical-mechanical wafer polishing device having an elastic membrane including a circular action plate portion, a membrane circumferential wall portion extending from a circumferential edge of the action plate portion along a direction perpendicular to a plate surface, and a chamber formed between the action plate portion and the membrane circumferential wall portion. The membrane includes a cooling channel portion having an action plate bottom surface section, and a supply penetration section penetrating the action plate portion such that one end is connected to the action plate bottom surface section and the other end is exposed to the upper side of the action plate portion. The chemical-mechanical wafer polishing device includes a cooling fluid supply portion having a cooling fluid supply tube connected to a free end of the supply penetration section, and providing a cooling fluid to the cooling channel portion.
摘要:
According to one embodiment, a semiconductor device manufacturing method comprises forming a film to be polished on a semiconductor substrate, and performing a CMP method on the film to be polished. The CMP method includes polishing the film to be polished by bringing a surface of the film to be polished into contact with a surface of a polishing pad having a negative Rsk value.