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公开(公告)号：US20100099222A1
公开(公告)日：2010-04-22
申请号：US12643180
申请日：2009-12-21
申请人： Rajendra D. Pendse , KyungOe Kim , Taewoo Kang
发明人： Rajendra D. Pendse , KyungOe Kim , Taewoo Kang
IPC分类号： H01L21/60 , H01L21/768
CPC分类号： H01L21/563 , H01L23/49838 , H01L24/16 , H01L24/28 , H01L24/81 , H01L2224/0401 , H01L2224/05571 , H01L2224/1132 , H01L2224/1147 , H01L2224/13006 , H01L2224/1308 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13116 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/8121 , H01L2224/81815 , H01L2224/83102 , H01L2224/92125 , H01L2924/00011 , H01L2924/00013 , H01L2924/00014 , H01L2924/0002 , H01L2924/01006 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01058 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/1433 , H01L2924/3011 , H01L2924/351 , H01L2224/13099 , H01L2924/00012 , H01L2924/00 , H01L2224/05552 , H01L2224/81805
摘要： A flip chip interconnect has a tapering interconnect structure, and the area of contact of the interconnect structure with the site on the substrate metallization is less than the area of contact of the interconnect structure with the die pad. A solder mask has an opening over the interconnect site, and the solder mask makes contact with the interconnect structure, or is in close proximity to the interconnect structure, at the margin of the opening. The flip chip interconnect is provided with an underfill. During the underfill process, the contact (or near proximity) of the solder mask with the interconnect structure interferes with flow of the underfill material toward the substrate adjacent the site, resulting in formation of a void left unfilled by the underfill, adjacent the contact of the interconnect structure with the site on the substrate metallization. The void can help provide relief from strain induced by changes in temperature of the system.
摘要翻译： 倒装芯片互连具有渐缩的互连结构，并且互连结构与衬底金属化部位的接触面积小于互连结构与管芯焊盘的接触面积。 焊接掩模在互连部位上具有开口，并且焊料掩模在开口边缘处与互连结构接触或者接近互连结构。 倒装芯片互连设置有底部填充。 在底部填充过程中，具有互连结构的焊接掩模的接触（或接近）干扰了底部填充材料朝向邻近现场的衬底的流动，导致形成由底部填充物未填充的空隙，邻近接触 该互连结构与衬底上的部位金属化。 该空隙可以帮助缓解由系统温度变化引起的应变。
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公开(公告)号：US08810029B2
公开(公告)日：2014-08-19
申请号：US13367214
申请日：2012-02-06
申请人： Rajendra D. Pendse , KyungOe Kim , TaeWoo Kang
发明人： Rajendra D. Pendse , KyungOe Kim , TaeWoo Kang
CPC分类号： H01L23/49811 , H01L21/563 , H01L21/76885 , H01L23/49838 , H01L23/522 , H01L24/16 , H01L24/28 , H01L24/81 , H01L2224/0554 , H01L2224/05567 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/1132 , H01L2224/1147 , H01L2224/1308 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/8121 , H01L2224/81385 , H01L2224/81815 , H01L2224/83102 , H01L2224/92125 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01058 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/1433 , H01L2924/3011 , H01L2924/351 , H01L2224/13099 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A flip chip interconnect has a tapering interconnect structure, and the area of contact of the interconnect structure with the site on the substrate metallization is less than the area of contact of the interconnect structure with the die pad. Also, a bond-on-lead or bond-on-narrow pad or bond on a small area of a contact pad interconnection includes such tapering flip chip interconnects. Also, methods for making the interconnect structure include providing a die having interconnect pads, providing a substrate having interconnect sites on a patterned conductive layer, providing a bump on a die pad, providing a fusible electrically conductive material either at the interconnect site or on the bump, mating the bump to the interconnect site, and heating to melt the fusible material.
摘要翻译： 倒装芯片互连具有渐缩的互连结构，并且互连结构与衬底金属化部位的接触面积小于互连结构与管芯焊盘的接触面积。 此外，接触焊盘互连的小区域上的引线键合或窄键焊接或键合包括这种锥形倒装芯片互连。 此外，用于制造互连结构的方法包括提供具有互连焊盘的管芯，提供在图案化导电层上具有互连位置的衬底，在管芯焊盘上提供凸块，在互连位置处或在互连位置上提供可熔电导材料 碰撞，将凸块配合到互连部位，并加热熔化可熔材料。
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公开(公告)号：USRE44562E1
公开(公告)日：2013-10-29
申请号：US13558953
申请日：2012-07-26
申请人： Rajendra D. Pendse , KyungOe Kim , TaeWoo Kang
发明人： Rajendra D. Pendse , KyungOe Kim , TaeWoo Kang
CPC分类号： H01L21/563 , H01L23/49838 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/13017 , H01L2224/13111 , H01L2224/1607 , H01L2224/16225 , H01L2224/16238 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/75 , H01L2224/75301 , H01L2224/81191 , H01L2224/81203 , H01L2224/81801 , H01L2224/83191 , H01L2224/83192 , H01L2224/83856 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/3011 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要： A flip chip interconnect has a tapering interconnect structure, and the area of contact of the interconnect structure with the site on the substrate metallization is less than the area of contact of the interconnect structure with the die pad. A solder mask has an opening over the interconnect site, and the solder mask makes contact with the interconnect structure, or is in close proximity to the interconnect structure, at the margin of the opening. The flip chip interconnect is provided with an underfill. During the underfill process, the contact (or near proximity) of the solder mask with the interconnect structure interferes with flow of the underfill material toward the substrate adjacent the site, resulting in formation of a void left unfilled by the underfill, adjacent the contact of the interconnect structure with the site on the substrate metallization. The void can help provide relief from strain induced by changes in temperature of the system.
摘要翻译： 倒装芯片互连具有渐缩的互连结构，并且互连结构与衬底金属化部位的接触面积小于互连结构与管芯焊盘的接触面积。 焊接掩模在互连部位上具有开口，并且焊料掩模在开口边缘处与互连结构接触或者接近互连结构。 倒装芯片互连设置有底部填充。 在底部填充过程中，具有互连结构的焊接掩模的接触（或接近）干扰了底部填充材料朝向邻近现场的衬底的流动，导致形成由底部填充物未填充的空隙，邻近接触 该互连结构与衬底上的部位金属化。 该空隙可以帮助缓解由系统温度变化引起的应变。
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公开(公告)号：US08129841B2
公开(公告)日：2012-03-06
申请号：US12624482
申请日：2009-11-24
申请人： Rajendra D. Pendse , KyungOe Kim , TaeWoo Kang
发明人： Rajendra D. Pendse , KyungOe Kim , TaeWoo Kang
CPC分类号： H01L23/49811 , H01L21/563 , H01L21/76885 , H01L23/49838 , H01L23/522 , H01L24/16 , H01L24/28 , H01L24/81 , H01L2224/0554 , H01L2224/05567 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/1132 , H01L2224/1147 , H01L2224/1308 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/8121 , H01L2224/81385 , H01L2224/81815 , H01L2224/83102 , H01L2224/92125 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01058 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/1433 , H01L2924/3011 , H01L2924/351 , H01L2224/13099 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A flip chip interconnect has a tapering interconnect structure, and the area of contact of the interconnect structure with the site on the substrate metallization is less than the area of contact of the interconnect structure with the die pad. Also, a bond-on-lead or bond-on-narrow pad or bond on a small area of a contact pad interconnection includes such tapering flip chip interconnects. Also, methods for making the interconnect structure include providing a die having interconnect pads, providing a substrate having interconnect sites on a patterned conductive layer, providing a bump on a die pad, providing a fusible electrically conductive material either at the interconnect site or on the bump, mating the bump to the interconnect site, and heating to melt the fusible material.
摘要翻译： 倒装芯片互连具有渐缩的互连结构，并且互连结构与衬底金属化部位的接触面积小于互连结构与管芯焊盘的接触面积。 此外，接触焊盘互连的小区域上的引线键合或窄键焊接或键合包括这种锥形倒装芯片互连。 此外，用于制造互连结构的方法包括提供具有互连焊盘的管芯，提供在图案化导电层上具有互连位置的衬底，在管芯焊盘上提供凸块，在互连位置处或在互连位置上提供可熔电导材料 碰撞，将凸块配合到互连部位，并加热熔化可熔材料。
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公开(公告)号：US07659633B2
公开(公告)日：2010-02-09
申请号：US11640534
申请日：2006-12-14
申请人： Rajendra D. Pendse , KyungOe Kim , Taewoo Kang
发明人： Rajendra D. Pendse , KyungOe Kim , Taewoo Kang
CPC分类号： H01L21/563 , H01L23/49838 , H01L24/16 , H01L24/29 , H01L24/75 , H01L24/81 , H01L2224/05571 , H01L2224/05573 , H01L2224/056 , H01L2224/1132 , H01L2224/1147 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/75 , H01L2224/81191 , H01L2224/81203 , H01L2224/8121 , H01L2224/81815 , H01L2224/83102 , H01L2224/83191 , H01L2224/83192 , H01L2224/83856 , H01L2224/92125 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01058 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/1433 , H01L2924/3011 , H01L2924/351 , H01L2924/00014 , H01L2224/13099 , H01L2924/00 , H01L2224/29099
摘要： A flip chip interconnect has a tapering interconnect structure, and the area of contact of the interconnect structure with the site on the substrate metallization is less than the area of contact of the interconnect structure with the die pad. A solder mask has an opening over the interconnect site, and the solder mask makes contact with the interconnect structure, or is in close proximity to the interconnect structure, at the margin of the opening. The flip chip interconnect is provided with an underfill. During the underfill process, the contact (or near proximity) of the solder mask with the interconnect structure interferes with flow of the underfill material toward the substrate adjacent the site, resulting in formation of a void left unfilled by the underfill, adjacent the contact of the interconnect structure with the site on the substrate metallization. The void can help provide relief from strain induced by changes in temperature of the system.
摘要翻译： 倒装芯片互连具有渐缩的互连结构，并且互连结构与衬底金属化部位的接触面积小于互连结构与管芯焊盘的接触面积。 焊接掩模在互连部位上具有开口，并且焊料掩模在开口边缘处与互连结构接触或者接近互连结构。 倒装芯片互连设置有底部填充。 在底部填充过程中，具有互连结构的焊接掩模的接触（或接近）干扰了底部填充材料朝向邻近现场的衬底的流动，导致形成由底部填充物未填充的空隙，邻近接触 该互连结构与衬底上的部位金属化。 该空隙可以帮助缓解由系统温度变化引起的应变。
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公开(公告)号：US20120273943A1
公开(公告)日：2012-11-01
申请号：US13529794
申请日：2012-06-21
申请人： Rajendra D. Pendse , KyungOe Kim , TaeWoo Kang
发明人： Rajendra D. Pendse , KyungOe Kim , TaeWoo Kang
IPC分类号： H01L23/498 , H01L21/50
CPC分类号： H01L21/563 , H01L23/49838 , H01L24/16 , H01L24/28 , H01L24/81 , H01L2224/0401 , H01L2224/05571 , H01L2224/1132 , H01L2224/1147 , H01L2224/13006 , H01L2224/1308 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13116 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/8121 , H01L2224/81815 , H01L2224/83102 , H01L2224/92125 , H01L2924/00011 , H01L2924/00013 , H01L2924/00014 , H01L2924/0002 , H01L2924/01006 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01058 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/1433 , H01L2924/3011 , H01L2924/351 , H01L2224/13099 , H01L2924/00012 , H01L2924/00 , H01L2224/05552 , H01L2224/81805
摘要： A flip chip interconnect has a tapering interconnect structure, and the area of contact of the interconnect structure with the site on the substrate metallization is less than the area of contact of the interconnect structure with the die pad. A solder mask has an opening over the interconnect site, and the solder mask makes contact with the interconnect structure at the margin of the opening. The flip chip interconnect is provided with an underfill. During the underfill process, the contact or near proximity of the solder mask with the interconnect structure interferes with flow of the underfill material toward the substrate adjacent the site, resulting in formation of a void left unfilled by the underfill, adjacent the contact of the interconnect structure with the site on the substrate metallization. The void can help provide relief from strain induced by changes in temperature of the system.
摘要翻译： 倒装芯片互连具有渐缩的互连结构，并且互连结构与衬底金属化部位的接触面积小于互连结构与管芯焊盘的接触面积。 焊接掩模在互连部位上具有开口，并且焊接掩模在开口边缘处与互连结构接触。 倒装芯片互连设置有底部填充。 在底部填充过程中，焊接掩模与互连结构的接触或接近会干扰底部填充材料向邻近现场的衬底的流动，从而形成与底部填充物相邻的空隙，邻近互连 结构与基片金属化部位。 该空隙可以帮助缓解由系统温度变化引起的应变。
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公开(公告)号：US08216930B2
公开(公告)日：2012-07-10
申请号：US12643180
申请日：2009-12-21
申请人： Rajendra D. Pendse , KyungOe Kim , TaeWoo Kang
发明人： Rajendra D. Pendse , KyungOe Kim , TaeWoo Kang
IPC分类号： H01L21/44
CPC分类号： H01L21/563 , H01L23/49838 , H01L24/16 , H01L24/28 , H01L24/81 , H01L2224/0401 , H01L2224/05571 , H01L2224/1132 , H01L2224/1147 , H01L2224/13006 , H01L2224/1308 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13116 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/8121 , H01L2224/81815 , H01L2224/83102 , H01L2224/92125 , H01L2924/00011 , H01L2924/00013 , H01L2924/00014 , H01L2924/0002 , H01L2924/01006 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01058 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/1433 , H01L2924/3011 , H01L2924/351 , H01L2224/13099 , H01L2924/00012 , H01L2924/00 , H01L2224/05552 , H01L2224/81805
摘要： A flip chip interconnect has a tapering interconnect structure, and the area of contact of the interconnect structure with the site on the substrate metallization is less than the area of contact of the interconnect structure with the die pad. A solder mask has an opening over the interconnect site, and the solder mask makes contact with the interconnect structure, or is in close proximity to the interconnect structure, at the margin of the opening. The flip chip interconnect is provided with an underfill. During the underfill process, the contact (or near proximity) of the solder mask with the interconnect structure interferes with flow of the underfill material toward the substrate adjacent the site, resulting in formation of a void left unfilled by the underfill, adjacent the contact of the interconnect structure with the site on the substrate metallization. The void can help provide relief from strain induced by changes in temperature of the system.
摘要翻译： 倒装芯片互连具有渐缩的互连结构，并且互连结构与衬底金属化部位的接触面积小于互连结构与管芯焊盘的接触面积。 焊接掩模在互连部位上具有开口，并且焊料掩模在开口边缘处与互连结构接触或者接近互连结构。 倒装芯片互连设置有底部填充。 在底部填充过程中，具有互连结构的焊接掩模的接触（或接近）干扰了底部填充材料朝向邻近现场的衬底的流动，导致形成由底部填充物未填充的空隙，邻近接触 该互连结构与衬底上的部位金属化。 该空隙可以帮助缓解由系统温度变化引起的应变。
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公开(公告)号：US09773685B2
公开(公告)日：2017-09-26
申请号：US13529794
申请日：2012-06-21
申请人： Rajendra D. Pendse , KyungOe Kim , TaeWoo Kang
发明人： Rajendra D. Pendse , KyungOe Kim , TaeWoo Kang
CPC分类号： H01L21/563 , H01L23/49838 , H01L24/16 , H01L24/28 , H01L24/81 , H01L2224/0401 , H01L2224/05571 , H01L2224/1132 , H01L2224/1147 , H01L2224/13006 , H01L2224/1308 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13116 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/8121 , H01L2224/81815 , H01L2224/83102 , H01L2224/92125 , H01L2924/00011 , H01L2924/00013 , H01L2924/00014 , H01L2924/0002 , H01L2924/01006 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01058 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/1433 , H01L2924/3011 , H01L2924/351 , H01L2224/13099 , H01L2924/00012 , H01L2924/00 , H01L2224/05552 , H01L2224/81805
摘要： A flip chip interconnect has a tapering interconnect structure, and the area of contact of the interconnect structure with the site on the substrate metallization is less than the area of contact of the interconnect structure with the die pad. A solder mask has an opening over the interconnect site, and the solder mask makes contact with the interconnect structure at the margin of the opening. The flip chip interconnect is provided with an underfill. During the underfill process, the contact or near proximity of the solder mask with the interconnect structure interferes with flow of the underfill material toward the substrate adjacent the site, resulting in formation of a void left unfilled by the underfill, adjacent the contact of the interconnect structure with the site on the substrate metallization. The void can help provide relief from strain induced by changes in temperature of the system.
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公开(公告)号：US20120133043A1
公开(公告)日：2012-05-31
申请号：US13367214
申请日：2012-02-06
申请人： Rajendra D. Pendse , KyungOe Kim , Taewoo Kang
发明人： Rajendra D. Pendse , KyungOe Kim , Taewoo Kang
IPC分类号： H01L23/498 , H01L21/28
CPC分类号： H01L23/49811 , H01L21/563 , H01L21/76885 , H01L23/49838 , H01L23/522 , H01L24/16 , H01L24/28 , H01L24/81 , H01L2224/0554 , H01L2224/05567 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/1132 , H01L2224/1147 , H01L2224/1308 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/8121 , H01L2224/81385 , H01L2224/81815 , H01L2224/83102 , H01L2224/92125 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01058 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/1433 , H01L2924/3011 , H01L2924/351 , H01L2224/13099 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A flip chip interconnect has a tapering interconnect structure, and the area of contact of the interconnect structure with the site on the substrate metallization is less than the area of contact of the interconnect structure with the die pad. Also, a bond-on-lead or bond-on-narrow pad or bond on a small area of a contact pad interconnection includes such tapering flip chip interconnects. Also, methods for making the interconnect structure include providing a die having interconnect pads, providing a substrate having interconnect sites on a patterned conductive layer, providing a bump on a die pad, providing a fusible electrically conductive material either at the interconnect site or on the bump, mating the bump to the interconnect site, and heating to melt the fusible material.
摘要翻译： 倒装芯片互连具有渐缩的互连结构，并且互连结构与衬底金属化部位的接触面积小于互连结构与管芯焊盘的接触面积。 此外，接触焊盘互连的小区域上的引线键合或窄键焊接或键合包括这种锥形倒装芯片互连。 此外，用于制造互连结构的方法包括提供具有互连焊盘的管芯，提供在图案化导电层上具有互连位置的衬底，在管芯焊盘上提供凸块，在互连位置处或在互连位置上提供可熔电导材料 碰撞，将凸块配合到互连部位，并加热熔化可熔材料。
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公开(公告)号：US20100065966A1
公开(公告)日：2010-03-18
申请号：US12624482
申请日：2009-11-24
申请人： Rajendra D. Pendse , KyungOe Kim , TaeWoo Kang
发明人： Rajendra D. Pendse , KyungOe Kim , TaeWoo Kang
IPC分类号： H01L23/498
CPC分类号： H01L23/49811 , H01L21/563 , H01L21/76885 , H01L23/49838 , H01L23/522 , H01L24/16 , H01L24/28 , H01L24/81 , H01L2224/0554 , H01L2224/05567 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/1132 , H01L2224/1147 , H01L2224/1308 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/8121 , H01L2224/81385 , H01L2224/81815 , H01L2224/83102 , H01L2224/92125 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01058 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/1433 , H01L2924/3011 , H01L2924/351 , H01L2224/13099 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A flip chip interconnect has a tapering interconnect structure, and the area of contact of the interconnect structure with the site on the substrate metallization is less than the area of contact of the interconnect structure with the die pad. Also, a bond-on-lead or bond-on-narrow pad or bond on a small area of a contact pad interconnection includes such tapering flip chip interconnects. Also, methods for making the interconnect structure include providing a die having interconnect pads, providing a substrate having interconnect sites on a patterned conductive layer, providing a bump on a die pad, providing a fusible electrically conductive material either at the interconnect site or on the bump, mating the bump to the interconnect site, and heating to melt the fusible material.
摘要翻译： 倒装芯片互连具有渐缩的互连结构，并且互连结构与衬底金属化部位的接触面积小于互连结构与管芯焊盘的接触面积。 此外，接触焊盘互连的小区域上的引线键合或窄键焊接或键合包括这种锥形倒装芯片互连。 此外，用于制造互连结构的方法包括提供具有互连焊盘的管芯，提供在图案化导电层上具有互连位置的衬底，在管芯焊盘上提供凸块，在互连位置处或在互连位置上提供可熔电导材料 碰撞，将凸块配合到互连部位，并加热熔化可熔材料。
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