公开(公告)号：US07592105B2

公开(公告)日：2009-09-22

申请号：US11486523

申请日：2006-07-13

申请人： Randall W. Chance ,  J. Brett Rolfson ,  Azeddine Zerrade

发明人： Randall W. Chance ,  J. Brett Rolfson ,  Azeddine Zerrade

IPC分类号： G03F1/00 ,  G03C5/00

CPC分类号： G03F1/32 ,  C03C15/00 ,  G03F1/26 ,  G03F1/72

摘要： The invention includes methods of converting reticles from configurations suitable for utilization with later generation (shorter wavelength) stepper radiations to configurations suitable for utilization with earlier generation (longer wavelength) stepper radiations. The invention can be utilized for converting a reticle from a configuration suitable for 193 nanometer wavelength radiation to a configuration suitable for 248 nanometer wavelength radiation. In such aspect, a quartz-containing material of a substrate can be protected with a patterned layer consisting essentially of molybdenum and silicon while the quartz-containing material is subjected to a dry etch. The configuration suitable for 248 nanometer wavelength radiation can be constructed so that a phase of 248 nanometer wavelength radiation is shifted by about 180° upon passing through combined thicknesses of the patterned layer and the quartz-containing material, relative to 248 nanometer wavelength radiation which passes only through the quartz-containing material.

摘要翻译： 本发明包括从适合于利用后代（较短波长）步进辐射的配置转换掩模版到适于利用早期生成（更长波长）步进辐射的配置的方法。 本发明可用于将掩模版从适于193纳米波长辐射的配置转换成适合于248纳米波长辐射的配置。 在这种方面，可以用基本上由钼和硅组成的图案层来保护衬底的含石英材料，同时对含石英的材料进行干蚀刻。 可以构造适合于248纳米波长辐射的配置，使得248纳米波长辐射的相位相对于通过图案化层和含石英的材料的组合厚度相对于相对于通过的248纳米波长辐射而偏移大约180度 仅通过含石英材料。

公开(公告)号：US07147974B2

公开(公告)日：2006-12-12

申请号：US10686342

申请日：2003-10-14

申请人： Randall W. Chance ,  J. Brett Rolfson ,  Azeddine Zerrade

发明人： Randall W. Chance ,  J. Brett Rolfson ,  Azeddine Zerrade

IPC分类号： G01F9/00

CPC分类号： G03F1/32 ,  C03C15/00 ,  G03F1/26 ,  G03F1/72

摘要： The invention includes methods of converting reticles from configurations suitable for utilization with later generation (shorter wavelength) stepper radiations to configurations suitable for utilization with earlier generation (longer wavelength) stepper radiations. The invention can be utilized for converting a reticle from a configuration suitable for 193 nanometer wavelength radiation to a configuration suitable for 248 nanometer wavelength radiation. In such aspect, a quartz-containing material of a substrate can be protected with a patterned layer consisting essentially of molybdenum and silicon while the quartz-containing material is subjected to a dry etch. The configuration suitable for 248 nanometer wavelength radiation can be constructed so that a phase of 248 nanometer wavelength radiation is shifted by about 180° upon passing through combined thicknesses of the patterned layer and the quartz-containing material, relative to 248 nanometer wavelength radiation which passes only through the quartz-containing material.

摘要翻译： 本发明包括从适合于利用后代（较短波长）步进辐射的配置转换掩模版到适于利用早期生成（更长波长）步进辐射的配置的方法。 本发明可用于将掩模版从适于193纳米波长辐射的配置转换成适合于248纳米波长辐射的配置。 在这种方面，可以用基本上由钼和硅组成的图案层来保护衬底的含石英材料，同时对含石英的材料进行干蚀刻。 可以构造适合于248纳米波长辐射的配置，使得248纳米波长辐射的相位相对于通过图案化层和含石英的材料的组合厚度相对于相对于通过的248纳米波长辐射而偏移大约180度 仅通过含石英材料。

公开(公告)号：US07767365B2

公开(公告)日：2010-08-03

申请号：US11515089

申请日：2006-08-31

申请人： Craig M. Carpenter ,  James Baugh ,  Steve McDonald ,  Robert Rasmussen ,  J. Brett Rolfson ,  Azeddine Zerrade

发明人： Craig M. Carpenter ,  James Baugh ,  Steve McDonald ,  Robert Rasmussen ,  J. Brett Rolfson ,  Azeddine Zerrade

IPC分类号： G03F1/00

CPC分类号： G03F1/82 ,  G03F1/32 ,  G03F1/54 ,  G03F1/80

摘要： A method for removing impurities (e.g., atomic sulfur) from a reticle for use in photolithography is provided. In one embodiment, a reticle (or photomask) comprising a plate, a first layer over the plate, and a photoresist layer over the first layer is provided. The photoresist layer is removed with a first chemistry comprising a sulfur-containing compound. At least a portion of the first layer is removed with a second chemistry comprising a sulfur-containing etchant, thereby exposing portions of the plate. Removing the photoresist layer and/or at least a portion of the first layer leaves sulfur on at least portions of the reticle. In a cleaning step, the reticle is contacted with one or more excited species of oxygen to remove residual sulfur and other contaminants, such as carbon, sulfur and oxygen-containing species. Methods of embodiments can be used to clean, e.g., binary photomasks, attenuated phase shift masks (APSMs) and high transmission attenuated photomasks.

摘要翻译： 提供从用于光刻的掩模版中除去杂质（例如原子硫）的方法。 在一个实施例中，提供了包括板，板上的第一层和第一层上的光致抗蚀剂层的掩模版（或光掩模）。 用包含含硫化合物的第一化学物质除去光致抗蚀剂层。 用包含含硫蚀刻剂的第二化学物质除去第一层的至少一部分，从而暴露板的部分。 去除光致抗蚀剂层和/或第一层的至少一部分在掩模版的至少部分上留下硫。 在清洁步骤中，将掩模版与一种或多种激发的氧气接触以除去残留的硫和其它污染物，例如碳，硫和含氧物质。 实施例的方法可用于清洁例如二值光掩模，衰减相移掩模（APSM）和高透射衰减光掩模。

公开(公告)号：US20080057411A1

公开(公告)日：2008-03-06

申请号：US11515089

申请日：2006-08-31

申请人： Craig M. Carpenter ,  James Baugh ,  Steve McDonald ,  Robert Rasmussen ,  J. Brett Rolfson ,  Azeddine Zerrade

发明人： Craig M. Carpenter ,  James Baugh ,  Steve McDonald ,  Robert Rasmussen ,  J. Brett Rolfson ,  Azeddine Zerrade

IPC分类号： A47G1/12 ,  G03C5/00 ,  G03F1/14 ,  G03F1/00

CPC分类号： G03F1/82 ,  G03F1/32 ,  G03F1/54 ,  G03F1/80

摘要： A method for removing impurities (e.g., atomic sulfur) from a reticle for use in photolithography is provided. In one embodiment, a reticle (or photomask) comprising a plate, a first layer over the plate, and a photoresist layer over the first layer is provided. The photoresist layer is removed with a first chemistry comprising a sulfur-containing compound. At least a portion of the first layer is removed with a second chemistry comprising a sulfur-containing etchant, thereby exposing portions of the plate. Removing the photoresist layer and/or at least a portion of the first layer leaves sulfur on at least portions of the reticle. In a cleaning step, the reticle is contacted with one or more excited species of oxygen to remove residual sulfur and other contaminants, such as carbon, sulfur and oxygen-containing species. Methods of embodiments can be used to clean, e.g., binary photomasks, attenuated phase shift masks (APSMs) and high transmission attenuated photomasks.

摘要翻译： 提供从用于光刻的掩模版中除去杂质（例如原子硫）的方法。 在一个实施例中，提供了包括板，板上的第一层和第一层上的光致抗蚀剂层的掩模版（或光掩模）。 用包含含硫化合物的第一化学物质除去光致抗蚀剂层。 用包含含硫蚀刻剂的第二化学物质除去第一层的至少一部分，从而暴露板的部分。 去除光致抗蚀剂层和/或第一层的至少一部分在掩模版的至少部分上留下硫。 在清洁步骤中，将掩模版与一种或多种激发的氧气接触以除去残留的硫和其它污染物，例如碳，硫和含氧物质。 实施例的方法可用于清洁例如二值光掩模，衰减相移掩模（APSM）和高透射衰减光掩模。

公开(公告)号：US07838183B2

公开(公告)日：2010-11-23

申请号：US12581455

申请日：2009-10-19

申请人： J. Brett Rolfson

发明人： J. Brett Rolfson

IPC分类号： G03F1/00

CPC分类号： G03F1/32 ,  G03F1/29

摘要： The present invention provides an attenuated phase shift mask (“APSM”) that, in each embodiment, includes completely transmissive regions sized and shaped to define desired semiconductor device features, slightly attenuated regions at the edges of the completely transmissive regions corresponding to isolated device features, highly attenuated regions at the edges of completely transmissive regions corresponding to closely spaced or nested device features, and completely opaque areas where it is desirable to block transmission of all radiation through the APSM. The present invention further provides methods for fabricating the APSMs according to the present invention.

摘要翻译： 本发明提供了衰减相移掩模（“APSM”），其在每个实施例中包括尺寸和形状以确定期望的半导体器件特征的完全透射区域，在完全透射区域的边缘处对应于隔离的器件特征的略微衰减的区域 在完全透射区域的边缘处的高度衰减的区域对应于紧密间隔或嵌套的器件特征，以及完全不透明的区域，其中期望阻止通过APSM的所有辐射的透射。 本发明还提供了制造根据本发明的APSM的方法。

公开(公告)号：US07535112B2

公开(公告)日：2009-05-19

申请号：US11584163

申请日：2006-10-20

申请人： John Aiton ,  Joseph M. Richards ,  J. Brett Rolfson ,  John M. Drynan

发明人： John Aiton ,  Joseph M. Richards ,  J. Brett Rolfson ,  John M. Drynan

IPC分类号： H01L23/29

CPC分类号： H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/49431 ,  H01L2224/78301 ,  H01L2224/85 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/00

摘要： The invention includes a semiconductor construction having a wire bonding region associated with a metal-containing layer, and having radiation-imageable material over the metal-containing layer. The radiation-imageable material can be configured as a multi-level pattern having a first topographical region with a first elevational height and a second topographical region with a second elevational height above the first elevational height. The second topographical region can be laterally displaced from the bonding region by at least a lateral width of the first topographical region, with said lateral width being at least about 10 microns. Additionally, or alternatively, the elevational height of the second topographical region can be at least about 2 microns above the elevational height of the first topographical region. The invention also includes a method of forming wire bonds for semiconductor constructions in which a multi-level pattern is photolithographically formed in a radiation-imageable material (such as, for example, polyimide).

摘要翻译： 本发明包括一种半导体结构，其具有与含金属层相关联的引线接合区域，并且在含金属层之上具有可辐射成像材料。 可辐射成像材料可以被配置为具有具有第一高度的第一形貌区域和具有高于第一高度高度的第二高度高度的第二地形区域的多层图案。 第二形貌区域可以从接合区域横向移位至少第一形貌区域的横向宽度，所述横向宽度为至少约10微米。 另外或替代地，第二形貌区域的高度高度可以高于第一地形区域的高度高度至少约2微米。 本发明还包括一种形成用于半导体结构的引线键合的方法，其中在可辐射成像材料（例如，聚酰亚胺）中光刻形成多层图案。

公开(公告)号：US07494750B2

公开(公告)日：2009-02-24

申请号：US11478887

申请日：2006-06-30

申请人： J. Brett Rolfson

发明人： J. Brett Rolfson

IPC分类号： G03F1/00

CPC分类号： G03F1/32 ,  G03F1/50 ,  G03F7/70425

摘要： The invention includes reticles and methods of forming reticles. In one aspect, a reticle can include a quartz-containing substrate, an attenuating layer, and an antireflective structure between the attenuating layer and the quartz-containing substrate. The invention can also include a reticle having a relatively transparent region between first and second surfaces, a relatively opaque region proximate the first surface, and a layer comprising one or both of metal fluoride and hafnium oxide proximate the first or second surface. The invention can also include methods of forming reticles in which an antireflective structure is formed over a surface of a quartz-containing substrate. The antireflective structure can comprise a Fabry-Perot pair, and in some aspects can comprise a layer containing one or both of metal fluoride and hafnium oxide.

摘要翻译： 本发明包括掩模版和形成掩模版的方法。 在一个方面，掩模版可以包括含有石英的衬底，衰减层和在所述衰减层和含石英衬底之间的抗反射结构。 本发明还可以包括在第一表面和第二表面之间具有相对透明区域的掩模版，靠近第一表面的相对不透明的区域，以及在第一表面或第二表面附近包含金属氟化物和氧化铪中的一种或两种的层。 本发明还可以包括在含石英衬底的表面上形成抗反射结构的形成掩模版的方法。 抗反射结构可以包含法布里 - 珀罗对，并且在一些方面可以包含含有金属氟化物和氧化铪中的一种或两种的层。

公开(公告)号：US07455937B2

公开(公告)日：2008-11-25

申请号：US11003274

申请日：2004-12-03

申请人： J. Brett Rolfson

发明人： J. Brett Rolfson

IPC分类号： G03F1/00

CPC分类号： G03F1/32 ,  G03F1/50 ,  G03F7/70425

摘要： The invention includes reticles and methods of forming reticles. In one aspect, a reticle can include a quartz-containing substrate, an attenuating layer, and an antireflective structure between the attenuating layer and the quartz-containing substrate. The invention can also include a reticle having a relatively transparent region between first and second surfaces, a relatively opaque region proximate the first surface, and a layer comprising one or both of metal fluoride and hafnium oxide proximate the first or second surface. The invention can also include methods of forming reticles in which an antireflective structure is formed over a surface of a quartz-containing substrate. The antireflective structure can comprise a Fabry-Perot pair, and in some aspects can comprise a layer containing one or both of metal fluoride and hafnium oxide.

摘要翻译： 本发明包括掩模版和形成掩模版的方法。 在一个方面，掩模版可以包括含有石英的衬底，衰减层和在所述衰减层和含石英衬底之间的抗反射结构。 本发明还可以包括在第一表面和第二表面之间具有相对透明区域的掩模版，靠近第一表面的相对不透明的区域，以及在第一表面或第二表面附近包含金属氟化物和氧化铪中的一种或两种的层。 本发明还可以包括在含石英衬底的表面上形成抗反射结构的形成掩模版的方法。 抗反射结构可以包含法布里 - 珀罗对，并且在一些方面可以包含含有金属氟化物和氧化铪中的一种或两种的层。

公开(公告)号：US06767690B2

公开(公告)日：2004-07-27

申请号：US10391310

申请日：2003-03-17

申请人： J. Brett Rolfson

发明人： J. Brett Rolfson

IPC分类号： G03F700

CPC分类号： G03F7/70466 ,  G03F7/0045 ,  Y10S430/143

摘要： The invention encompasses a method for forming a pattern across and expanse of photoresist. The expanse comprises a defined first region, second region and third region. The first region is exposed to a first radiation while leaving the third region not exposed; and subsequently the second region is exposed to a second radiation while leaving the third region not exposed to the second radiation. The second radiation is different from the first radiation. The exposure of the first and second regions in a solvent relative to the solubility of the third region of the expanse. After the first and second regions of the expanse are exposed to the first and second radiations, the expanse is exposed to a solvent to pattern the expanse. The invention can be utilized in forming radiation-patterning tools and stencils; and in patterning semiconductor substrates.

摘要翻译： 本发明包括一种用于在一片光致抗蚀剂上形成图案的方法。 该扩展包括限定的第一区域，第二区域和第三区域。 第一区域暴露于第一辐射同时使第三区域不暴露; 并且随后第二区域暴露于第二辐射，同时使第三区域不暴露于第二辐射。 第二次辐射与第一次辐射不同。 第一和第二区域暴露于第一和第二辐射改变第一和第二区域在溶剂中相对于the第三区域的溶解度的溶解度。 在广the的第一和第二区域暴露于第一次和第二次辐射之后，将该exp is暴露于溶剂以对exp to进行模拟。 本发明可用于形成辐射图案化工具和模板; 并且在图案化半导体衬底中。

公开(公告)号：US06599666B2

公开(公告)日：2003-07-29

申请号：US09809720

申请日：2001-03-15

申请人： J. Brett Rolfson

发明人： J. Brett Rolfson

IPC分类号： G03F900

CPC分类号： G03F1/32 ,  G03F1/29

摘要： The present invention provides an attenuated phase shift mask (“APSM”) that, in each embodiment, includes completely transmissive regions sized and shaped to define desired semiconductor device features, slightly attenuated regions at the edges of the completely transmissive regions corresponding to isolated device features, highly attenuated regions at the edges of completely transmissive regions corresponding to closely-spaced or nested device features, and completely opaque areas where it is desirable to block transmission of all radiation through the APSM. The present invention further provides methods for fabricating the APSMs according to the present invention.