公开(公告)号：US07767365B2

公开(公告)日：2010-08-03

申请号：US11515089

申请日：2006-08-31

申请人： Craig M. Carpenter ,  James Baugh ,  Steve McDonald ,  Robert Rasmussen ,  J. Brett Rolfson ,  Azeddine Zerrade

发明人： Craig M. Carpenter ,  James Baugh ,  Steve McDonald ,  Robert Rasmussen ,  J. Brett Rolfson ,  Azeddine Zerrade

IPC分类号： G03F1/00

CPC分类号： G03F1/82 ,  G03F1/32 ,  G03F1/54 ,  G03F1/80

摘要： A method for removing impurities (e.g., atomic sulfur) from a reticle for use in photolithography is provided. In one embodiment, a reticle (or photomask) comprising a plate, a first layer over the plate, and a photoresist layer over the first layer is provided. The photoresist layer is removed with a first chemistry comprising a sulfur-containing compound. At least a portion of the first layer is removed with a second chemistry comprising a sulfur-containing etchant, thereby exposing portions of the plate. Removing the photoresist layer and/or at least a portion of the first layer leaves sulfur on at least portions of the reticle. In a cleaning step, the reticle is contacted with one or more excited species of oxygen to remove residual sulfur and other contaminants, such as carbon, sulfur and oxygen-containing species. Methods of embodiments can be used to clean, e.g., binary photomasks, attenuated phase shift masks (APSMs) and high transmission attenuated photomasks.

摘要翻译： 提供从用于光刻的掩模版中除去杂质（例如原子硫）的方法。 在一个实施例中，提供了包括板，板上的第一层和第一层上的光致抗蚀剂层的掩模版（或光掩模）。 用包含含硫化合物的第一化学物质除去光致抗蚀剂层。 用包含含硫蚀刻剂的第二化学物质除去第一层的至少一部分，从而暴露板的部分。 去除光致抗蚀剂层和/或第一层的至少一部分在掩模版的至少部分上留下硫。 在清洁步骤中，将掩模版与一种或多种激发的氧气接触以除去残留的硫和其它污染物，例如碳，硫和含氧物质。 实施例的方法可用于清洁例如二值光掩模，衰减相移掩模（APSM）和高透射衰减光掩模。

公开(公告)号：US20080057411A1

公开(公告)日：2008-03-06

申请号：US11515089

申请日：2006-08-31

申请人： Craig M. Carpenter ,  James Baugh ,  Steve McDonald ,  Robert Rasmussen ,  J. Brett Rolfson ,  Azeddine Zerrade

发明人： Craig M. Carpenter ,  James Baugh ,  Steve McDonald ,  Robert Rasmussen ,  J. Brett Rolfson ,  Azeddine Zerrade

IPC分类号： A47G1/12 ,  G03C5/00 ,  G03F1/14 ,  G03F1/00

CPC分类号： G03F1/82 ,  G03F1/32 ,  G03F1/54 ,  G03F1/80

摘要： A method for removing impurities (e.g., atomic sulfur) from a reticle for use in photolithography is provided. In one embodiment, a reticle (or photomask) comprising a plate, a first layer over the plate, and a photoresist layer over the first layer is provided. The photoresist layer is removed with a first chemistry comprising a sulfur-containing compound. At least a portion of the first layer is removed with a second chemistry comprising a sulfur-containing etchant, thereby exposing portions of the plate. Removing the photoresist layer and/or at least a portion of the first layer leaves sulfur on at least portions of the reticle. In a cleaning step, the reticle is contacted with one or more excited species of oxygen to remove residual sulfur and other contaminants, such as carbon, sulfur and oxygen-containing species. Methods of embodiments can be used to clean, e.g., binary photomasks, attenuated phase shift masks (APSMs) and high transmission attenuated photomasks.

摘要翻译： 提供从用于光刻的掩模版中除去杂质（例如原子硫）的方法。 在一个实施例中，提供了包括板，板上的第一层和第一层上的光致抗蚀剂层的掩模版（或光掩模）。 用包含含硫化合物的第一化学物质除去光致抗蚀剂层。 用包含含硫蚀刻剂的第二化学物质除去第一层的至少一部分，从而暴露板的部分。 去除光致抗蚀剂层和/或第一层的至少一部分在掩模版的至少部分上留下硫。 在清洁步骤中，将掩模版与一种或多种激发的氧气接触以除去残留的硫和其它污染物，例如碳，硫和含氧物质。 实施例的方法可用于清洁例如二值光掩模，衰减相移掩模（APSM）和高透射衰减光掩模。

公开(公告)号：US07378127B2

公开(公告)日：2008-05-27

申请号：US09805620

申请日：2001-03-13

申请人： Craig M. Carpenter ,  Ross S. Dando

发明人： Craig M. Carpenter ,  Ross S. Dando

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/45519 ,  C23C16/45527

摘要： A chemical vapor deposition apparatus includes a deposition chamber defined at least in part by chamber walls, a substrate holder inside the chamber, and at least one process chemical inlet to the chamber. At least one purge inlet to the chamber is positioned elevationally above the substrate holder and outside a lateral periphery of the substrate holder. The purge inlet is configured to inject at least one purge material into the chamber and past the substrate holder. The purge inlet can be positioned and configured to inject an annular purge material curtain concentric to the substrate holder. A chemical vapor deposition method includes injecting at least one purge material into a deposition chamber and forming a purge curtain from the injected purge material. The purge curtain can extend downward from elevationally above a substrate holder and outside a lateral periphery of the substrate holder. The purge curtain can flow past the substrate holder.

摘要翻译： 化学气相沉积设备包括至少部分地由室壁限定的沉积室，室内的衬底保持器，以及至室的至少一个工艺化学入口。 至少一个到室的净化入口位于衬底保持器的正上方并且位于衬底保持器的侧边外侧。 净化入口构造成将至少一种清洗材料注入室中并经过衬底保持器。 吹扫入口可以被定位和构造成将衬套保持器同心的环形吹扫材料窗口注入。 化学气相沉积方法包括将至少一种吹扫材料注入沉积室并从注入的吹扫材料形成清洗帘。 清洗帘幕可从基板保持器的正上方向下延伸并且在基板保持器的侧边外侧延伸。 清洗帘可以流过基板支架。

公开(公告)号：US07229666B2

公开(公告)日：2007-06-12

申请号：US10912878

申请日：2004-08-06

申请人： Allen P. Mardian ,  Philip H. Campbell ,  Craig M. Carpenter ,  Randy W. Mercil ,  Sujit Sharan

发明人： Allen P. Mardian ,  Philip H. Campbell ,  Craig M. Carpenter ,  Randy W. Mercil ,  Sujit Sharan

IPC分类号： C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4401 ,  C23C16/45519

摘要： Methods of chemical vapor deposition include providing a deposition chamber defined at least in part by at least one of a chamber sidewall and a chamber base wall. At least one process chemical inlet to the deposition chamber is included. A substrate is positioned within the chamber and a process gas is provided over the substrate effective to deposit material onto the substrate. While providing the process gas, a purge gas is emitted into the chamber from a plurality of purge gas inlets comprised by at least one chamber wall surface. The purge gas inlets are separate from the at least one process chemical inlet and the emitting forms an inert gas curtain over the chamber wall surface.

摘要翻译： 化学气相沉积的方法包括提供至少部分地由室侧壁和室底壁中的至少一个限定的沉积室。 包括沉积室的至少一个工艺化学品入口。 衬底定位在腔室内，并且在衬底上方设置有效地将材料沉积到衬底上的工艺气体。 在提供工艺气体的同时，净化气体从由至少一个室壁表面包括的多个吹扫气体入口排出到室中。 吹扫气体入口与至少一个过程化学品入口分离，并且所述排放物在室壁表面上形成惰性气体窗帘。

公开(公告)号：US07090727B2

公开(公告)日：2006-08-15

申请号：US09932860

申请日：2001-08-17

申请人： Craig M. Carpenter ,  Raynald B. Cantin

发明人： Craig M. Carpenter ,  Raynald B. Cantin

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/455

摘要： A feedthrough device for use in deposition chambers such as chemical vapor deposition chambers and atomic layer deposition chambers and methods using the same in association with such chambers as well as chambers so equipped. The feedthrough device includes an associated heating device to maintain the temperature of the feedthrough device above a predetermined level and thus maintain a temperature differential between the deposition chamber body and a vaporized organometallic precursor as it passes therethrough. The feedthrough device may include a helical groove formed along the surface of a longitudinal body portion thereof to complementarily receive a resistance type cable heater. The heater may further include a temperature sensing device to assist in monitoring and controlling the temperature of the feedthrough device.

摘要翻译： 用于沉积室的馈通装置，例如化学气相沉积室和原子层沉积室，以及与这种室相关联的方法以及如此装备的室。 馈通装置包括相关联的加热装置，以将馈通装置的温度保持在预定水平以上，并且因此在沉积室主体和汽化的有机金属前体通过时保持温度差。 馈通装置可以包括沿着其纵向主体部分的表面形成的螺旋槽，以互补地接收电阻型电缆加热器。 加热器还可以包括温度感测装置，以帮助监视和控制馈通装置的温度。

公开(公告)号：US09326758B2

公开(公告)日：2016-05-03

申请号：US10667747

申请日：2003-09-22

申请人： Craig M. Carpenter ,  Paul A. Garant ,  Lee A. Core

发明人： Craig M. Carpenter ,  Paul A. Garant ,  Lee A. Core

IPC分类号： A61M29/00 ,  A61B17/00 ,  A61B17/12 ,  A61B17/34 ,  A61B17/076

CPC分类号： A61B17/0057 ,  A61B17/076 ,  A61B17/12122 ,  A61B17/12172 ,  A61B17/3417 ,  A61B2017/00292 ,  A61B2017/00575 ,  A61B2017/00592 ,  A61B2017/00615 ,  A61B2017/1205

摘要： The invention pertains to a system, and related methods, for the percutaneous transluminal delivery and retrieval of a prosthetic occluder through a front-end loader. The prosthetic occluder may be, for example, an intracardiac occluder for a patent foramen ovale. The system includes, in one embodiment, a front-end loader having a beveled distal end. In another embodiment, the system includes a front-end loader having a chamfered rim at the beveled distal end.

摘要翻译： 本发明涉及通过前端装载器进行经皮腔内输送和取回假体闭塞器的系统及相关方法。 假体闭塞器可以是例如用于卵孔专利的心脏内闭塞器。 在一个实施例中，该系统包括具有斜切远端的前端装载器。 在另一个实施例中，该系统包括前端加载器，其在倾斜的远端具有倒角边缘。

公开(公告)号：US06926775B2

公开(公告)日：2005-08-09

申请号：US10365085

申请日：2003-02-11

申请人： Craig M. Carpenter ,  Ross S. Dando ,  Danny Dynka

发明人： Craig M. Carpenter ,  Ross S. Dando ,  Danny Dynka

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/54 ,  C23C16/00

CPC分类号： C23C16/54 ,  C23C16/4401 ,  C23C16/45519 ,  C23C16/45544

摘要： Reactors having gas distributors for depositing materials onto micro-device workpieces, systems that include such reactors, and methods for depositing materials onto micro-device workpieces are disclosed herein. In one embodiment, a reactor for depositing materials onto a micro-device workpiece includes a reaction chamber, a passageway, and a door assembly. The reaction chamber includes a gas distributor configured to provide a flow of gas(es) to a micro-device workpiece on a workpiece holder. The passageway, which has a first end open to the reaction chamber and a second end apart from the reaction chamber, is configured to provide ingression to and egression from the chamber for processing the micro-device workpiece. The door assembly is configured to open and sealably close a door at the second end of the passageway. A gas conditioning system positioned in the door is configured to maintain a desired concentration and phase of gas constituents in the passageway.

摘要翻译： 具有用于将材料沉积到微器件工件上的气体分配器的反应器，包括这种反应器的系统以及将材料沉积到微器件工件上的方法在本文中公开。 在一个实施例中，用于将材料沉积到微器件工件上的反应器包括反应室，通道和门组件。 反应室包括配置成在工件保持器上向微器件工件提供气体流的气体分配器。 具有通向反应室的第一端和远离反应室的第二端的通道构造成提供从腔室进入和离开以处理微器件工件。 门组件构造成在通道的第二端处打开并密封地关闭门。 定位在门中的气体调节系统构造成保持通道中气体成分的期望浓度和相位。

公开(公告)号：US06838114B2

公开(公告)日：2005-01-04

申请号：US10155547

申请日：2002-05-24

申请人： Craig M. Carpenter ,  Ross S. Dando ,  Allen P. Mardian

发明人： Craig M. Carpenter ,  Ross S. Dando ,  Allen P. Mardian

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  C23C16/00

CPC分类号： C23C16/45525 ,  C23C16/52

摘要： Methods for depositing materials onto micro-device workpieces in a reaction chamber. One embodiment of such a method comprises providing a flow of a first precursor through the reaction chamber to deposit the first precursor onto the micro-device workpiece in the reaction chamber, and providing a flow of a purge gas through the reaction chamber to purge excess amounts of the first precursor. The method continues by monitoring a parameter correlated to a quantity of the first precursor and/or the purge gas in the reaction chamber as the first precursor and/or the purge gas flows through the reaction chamber. An additional aspect of this method is terminating the flow of the first precursor and/or the flow of the purge gas based on the monitored parameter of the quantity of the first precursor and/or the purge gas. The procedure of monitoring a parameter correlated to a quantity of the first precursor and/or the purge gas can comprise determining a concentration of the first precursor and/or the purge gas in the reaction chamber using a selected radiation.

摘要翻译： 在反应室中将材料沉积到微器件工件上的方法。 这种方法的一个实施方案包括提供通过反应室的第一前体的流动，以将第一前体沉积在反应室中的微器件工件上，并且提供净化气体流过反应室以净化过量 的第一个前体。 当第一前体和/或吹扫气体流过反应室时，通过监测与反应室中的第一前体和/或吹扫气体的量相关的参数来继续该方法。 该方法的另一方面是基于所监测的第一前体和/或吹扫气体的量的参数来终止第一前体和/或吹扫气体的流动。 监测与第一前体和/或吹扫气体的量相关的参数的程序可以包括使用所选择的辐射确定反应室中的第一前体和/或吹扫气体的浓度。

公开(公告)号：US06821347B2

公开(公告)日：2004-11-23

申请号：US10191889

申请日：2002-07-08

申请人： Craig M. Carpenter ,  Allen P. Mardian ,  Ross S. Dando ,  Kimberly R. Tschepen ,  Garo J. Derderian

发明人： Craig M. Carpenter ,  Allen P. Mardian ,  Ross S. Dando ,  Kimberly R. Tschepen ,  Garo J. Derderian

IPC分类号： B05C318

CPC分类号： C23C16/45544 ,  C23C16/45565

摘要： Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate. For example, the occluded passageway can be canted at an oblique angle relative to the first surface of the distributor plate so that gas flowing through the canted passageway changes direction as it passes through the distributor plate.

公开(公告)号：US06797337B2

公开(公告)日：2004-09-28

申请号：US10223175

申请日：2002-08-19

申请人： Ross S. Dando ,  Craig M. Carpenter ,  Allen P. Mardian ,  Garo J. Derderian ,  Dan Gealy

发明人： Ross S. Dando ,  Craig M. Carpenter ,  Allen P. Mardian ,  Garo J. Derderian ,  Dan Gealy

IPC分类号： B05D300

CPC分类号： C23C16/4481

摘要： A method and apparatus for delivering precursors to a chemical vapor deposition or atomic layer deposition chamber is provided. The apparatus includes a temperature-controlled vessel containing a precursor. An energy source is used to vaporize the precursor at its surface such that substantially no thermal decomposition of the remaining precursor occurs. The energy source may include a carrier gas, a radio frequency coupling device, or an infrared irradiation source. After the precursor is exposed to the energy source, the vaporized portion of the precursor is transported via a temperature-controlled conduit to a chemical vapor deposition or atomic deposition chamber for further processing.

摘要翻译： 提供了用于将前体输送到化学气相沉积或原子层沉积室的方法和装置。 该装置包括含有前体的温度控制容器。 使用能源在其表面蒸发前体，使得基本上不会发生剩余前体的热分解。 能量源可以包括载气，射频耦合装置或红外辐射源。 在前体暴露于能量源之后，前体的蒸发部分通过温度控制的导管输送到化学气相沉积或原子沉积室，用于进一步处理。