公开(公告)号：US20140070376A1

公开(公告)日：2014-03-13

申请号：US13609306

申请日：2012-09-11

申请人： Reinhard Hess ,  Katharina Umminger ,  Gabriel Maier ,  Markus Menath ,  Gunther Mackh ,  Hannes Eder ,  Alexander Heinrich

发明人： Reinhard Hess ,  Katharina Umminger ,  Gabriel Maier ,  Markus Menath ,  Gunther Mackh ,  Hannes Eder ,  Alexander Heinrich

IPC分类号： H01L21/768 ,  H01L29/02

CPC分类号： H01L23/3171 ,  H01L21/02107 ,  H01L21/30655 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/3185 ,  H01L23/485 ,  H01L24/05 ,  H01L2224/0236 ,  H01L2224/02372 ,  H01L2224/02375 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/05548 ,  H01L2224/0556 ,  H01L2224/0557 ,  H01L2224/05611 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/05664 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/01013 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/0103 ,  H01L2924/01028 ,  H01L2924/01026 ,  H01L2224/05552

摘要： A method for manufacturing a chip arrangement is provided, the method including: forming a hole in a carrier including at least one chip, wherein forming a hole in the carrier includes: selectively removing carrier material, thereby forming a cavity in the carrier, forming passivation material over one or more cavity walls exposed by the selective removal of the carrier material; selectively removing a portion of the passivation material and further carrier material exposed by the selective removal of the passivation material, wherein a further portion of the passivation material remains over at least one cavity side wall; the method further including subsequently forming a layer over the further portion of passivation material remaining over the at least one cavity side wall.

摘要翻译： 提供了一种制造芯片布置的方法，该方法包括：在载体中形成一个孔，该载体包括至少一个芯片，其中在载体中形成孔包括：选择性地去除载体材料，从而在载体中形成空腔，形成钝化 通过选择性去除载体材料暴露的一个或多个腔壁上的材料; 选择性地去除钝化材料的一部分和通过选择性去除钝化材料暴露的另外的载体材料，其中钝化材料的另一部分保留在至少一个空腔侧壁上; 该方法还包括随后在保留在至少一个空腔侧壁上的钝化材料的另一部分上形成层。

公开(公告)号：US08951915B2

公开(公告)日：2015-02-10

申请号：US13609306

申请日：2012-09-11

申请人： Reinhard Hess ,  Katharina Umminger ,  Gabriel Maier ,  Markus Menath ,  Gunther Mackh ,  Hannes Eder ,  Alexander Heinrich

发明人： Reinhard Hess ,  Katharina Umminger ,  Gabriel Maier ,  Markus Menath ,  Gunther Mackh ,  Hannes Eder ,  Alexander Heinrich

IPC分类号： H01L21/44

CPC分类号： H01L23/3171 ,  H01L21/02107 ,  H01L21/30655 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/3185 ,  H01L23/485 ,  H01L24/05 ,  H01L2224/0236 ,  H01L2224/02372 ,  H01L2224/02375 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/05548 ,  H01L2224/0556 ,  H01L2224/0557 ,  H01L2224/05611 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/05664 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/01013 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/0103 ,  H01L2924/01028 ,  H01L2924/01026 ,  H01L2224/05552

摘要： A method for manufacturing a chip arrangement is provided, the method including: forming a hole in a carrier including at least one chip, wherein forming a hole in the carrier includes: selectively removing carrier material, thereby forming a cavity in the carrier, forming passivation material over one or more cavity walls exposed by the selective removal of the carrier material; selectively removing a portion of the passivation material and further carrier material exposed by the selective removal of the passivation material, wherein a further portion of the passivation material remains over at least one cavity side wall; the method further including subsequently forming a layer over the further portion of passivation material remaining over the at least one cavity side wall.

摘要翻译： 提供了一种制造芯片布置的方法，该方法包括：在载体中形成一个孔，该载体包括至少一个芯片，其中在载体中形成孔包括：选择性地去除载体材料，从而在载体中形成空腔，形成钝化 通过选择性去除载体材料暴露的一个或多个腔壁上的材料; 选择性地去除钝化材料的一部分和通过选择性去除钝化材料暴露的另外的载体材料，其中钝化材料的另一部分保留在至少一个空腔侧壁上; 该方法还包括随后在保留在至少一个空腔侧壁上的钝化材料的另一部分上形成层。