公开(公告)号：US20160013142A1

公开(公告)日：2016-01-14

申请号：US14792461

申请日：2015-07-06

Applicant: Renesas Electronics Corporation

Inventor： Takehiko MAEDA ,  Akira YAJIMA ,  Satoshi ITOU ,  Fumiyoshi KAWASHIRO

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/06 ,  H01L24/08 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05553 ,  H01L2224/05582 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/05684 ,  H01L2224/2919 ,  H01L2224/32014 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48505 ,  H01L2224/48799 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/01008 ,  H01L2924/01074

Abstract: An improvement is achieved in the reliability of a semiconductor device. Over a semiconductor substrate, an interlayer insulating film is formed and, over the interlayer insulating film, a pad is formed. Over the interlayer insulating film, an insulating film is formed so as to cover the pad. In the insulating film, an opening is formed to expose a part of the pad. The pad is a pad to which a copper wire is to be electrically coupled and which includes an Al-containing conductive film containing aluminum as a main component. Over the Al-containing conductive film in a region overlapping the opening in plan view, a laminated film including a barrier conductor film, and a metal film over the barrier conductor film is formed. The metal film is in an uppermost layer. The barrier conductor film is a single-layer film or a laminated film including one or more layers of films selected from the group consisting of a Ti film, a TiN film, a Ta film, a TaN film, a W film, a WN film, a TiW film, and a TaW film. The metal film is made of one or more metals selected from the group consisting of Pd, Au, Ru, Rh, Pt, and Ir.

Abstract translation: 半导体器件的可靠性得到改善。 在半导体衬底上形成层间绝缘膜，并且在层间绝缘膜上形成衬垫。 在层间绝缘膜之上，形成绝缘膜以覆盖该焊盘。 在绝缘膜中形成开口以露出垫的一部分。 焊盘是铜导线电耦合的焊盘，其包括含有铝作为主要成分的含Al导电膜。 在平面图中与开口重叠的区域中的含Al导电膜上形成包含阻挡导体膜的层叠膜和阻挡导体膜上的金属膜。 金属膜位于最上层。 阻挡导电膜是单层膜或包含选自Ti膜，TiN膜，Ta膜，TaN膜，W膜，WN膜中的一层或多层膜的层压膜 ，TiW膜和TaW膜。 金属膜由选自Pd，Au，Ru，Rh，Pt和Ir中的一种或多种金属制成。