公开(公告)号：US20170287868A1

公开(公告)日：2017-10-05

申请号：US15421461

申请日：2017-02-01

Applicant: Renesas Electronics Corporation

Inventor： Seiya ISOZAKI ,  Takashi MORIYAMA ,  Takehiko MAEDA

IPC: H01L23/00 ,  H01L21/48 ,  H01L23/495

CPC classification number: H01L24/43 ,  H01L21/4853 ,  H01L23/3171 ,  H01L23/4952 ,  H01L23/49582 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/85 ,  H01L24/92 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/32225 ,  H01L2224/3303 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/83192 ,  H01L2224/8385 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/04941 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00015 ,  H01L2224/29099 ,  H01L2224/32245 ,  H01L2924/00

Abstract: A pad formed in a semiconductor chip is formed such that a thickness of an aluminum film in a wire bonding portion is smaller than that of an aluminum film in a peripheral portion covered with a protective film. On the other hand, a thickness of a wiring formed in the same step as the pad is larger than that of the pad in the wire bonding portion. The main conductive film of the pad in the wire bonding portion is comprised of only one layer of a first aluminum film, while the main conductive film of the wiring is comprised of at least two layers of aluminum films (the first aluminum film and a second aluminum film) in any region of the wiring.

公开(公告)号：US20160013142A1

公开(公告)日：2016-01-14

申请号：US14792461

申请日：2015-07-06

Applicant: Renesas Electronics Corporation

Inventor： Takehiko MAEDA ,  Akira YAJIMA ,  Satoshi ITOU ,  Fumiyoshi KAWASHIRO

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/06 ,  H01L24/08 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05553 ,  H01L2224/05582 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/05684 ,  H01L2224/2919 ,  H01L2224/32014 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48505 ,  H01L2224/48799 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/01008 ,  H01L2924/01074

Abstract: An improvement is achieved in the reliability of a semiconductor device. Over a semiconductor substrate, an interlayer insulating film is formed and, over the interlayer insulating film, a pad is formed. Over the interlayer insulating film, an insulating film is formed so as to cover the pad. In the insulating film, an opening is formed to expose a part of the pad. The pad is a pad to which a copper wire is to be electrically coupled and which includes an Al-containing conductive film containing aluminum as a main component. Over the Al-containing conductive film in a region overlapping the opening in plan view, a laminated film including a barrier conductor film, and a metal film over the barrier conductor film is formed. The metal film is in an uppermost layer. The barrier conductor film is a single-layer film or a laminated film including one or more layers of films selected from the group consisting of a Ti film, a TiN film, a Ta film, a TaN film, a W film, a WN film, a TiW film, and a TaW film. The metal film is made of one or more metals selected from the group consisting of Pd, Au, Ru, Rh, Pt, and Ir.

Abstract translation: 半导体器件的可靠性得到改善。 在半导体衬底上形成层间绝缘膜，并且在层间绝缘膜上形成衬垫。 在层间绝缘膜之上，形成绝缘膜以覆盖该焊盘。 在绝缘膜中形成开口以露出垫的一部分。 焊盘是铜导线电耦合的焊盘，其包括含有铝作为主要成分的含Al导电膜。 在平面图中与开口重叠的区域中的含Al导电膜上形成包含阻挡导体膜的层叠膜和阻挡导体膜上的金属膜。 金属膜位于最上层。 阻挡导电膜是单层膜或包含选自Ti膜，TiN膜，Ta膜，TaN膜，W膜，WN膜中的一层或多层膜的层压膜 ，TiW膜和TaW膜。 金属膜由选自Pd，Au，Ru，Rh，Pt和Ir中的一种或多种金属制成。

公开(公告)号：US20230369179A1

公开(公告)日：2023-11-16

申请号：US18172665

申请日：2023-02-22

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Katsuhiko KITAGAWA ,  Takehiko MAEDA ,  Kuniharu MUTO ,  Takeshi MIYAKOSHI

IPC: H01L23/495 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00

CPC classification number: H01L23/49513 ,  H01L23/49582 ,  H01L23/3121 ,  H01L21/565 ,  H01L24/48 ,  H01L24/05 ,  H01L2224/04042 ,  H01L2224/48247 ,  H01L2924/35121 ,  H01L2924/181

Abstract: A semiconductor device includes: a die pad having an upper surface facing a semiconductor chip, a metal film formed on the upper surface, and a bonding material formed so as to cover the metal film. Here, the upper surface has: a first region overlapping the semiconductor chip, a second region not overlapping the semiconductor chip, a third region included in the first region and covered with the metal film, and a fourth region included in the first region and adjacent to the third region and also not covered with the metal film. Also, the semiconductor chip is mounted on the die pad such that a center of the semiconductor chip overlaps the third region. Further, an area of the third region is greater than or equal to 11% of an area of the first region, and less than or equal to 55% of the area of the first region.

公开(公告)号：US20230378032A1

公开(公告)日：2023-11-23

申请号：US18175805

申请日：2023-02-28

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kosuke KITAICHI ,  Masatoshi SUGIURA ,  Hideaki TAMIMOTO ,  Takehiko MAEDA ,  Keita TAKADA ,  Yoshitaka KYOUGOKU

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56 ,  H02M7/00

CPC classification number: H01L23/49562 ,  H01L24/32 ,  H01L24/73 ,  H01L23/49513 ,  H01L24/48 ,  H01L23/3142 ,  H01L21/565 ,  H01L23/4952 ,  H01L23/49582 ,  H02M7/003 ,  H01L24/83 ,  H01L2224/48247 ,  H01L2224/32245 ,  H01L2224/73265 ,  H01L2924/30101 ,  H01L2924/13091 ,  H01L2224/83862

Abstract: To manufacture a semiconductor device, a first heat treatment for curing a first adhesive material of a conductive paste type is performed, after a semiconductor chip is mounted on a die pad of a lead frame via the first adhesive material. After that, a metal plate is disposed on a pad of the semiconductor chip such that the metal plate faces the pad of the semiconductor chip via a second adhesive material of a conductive paste type, and a second heat treatment is performed for curing each of the first adhesive material and the second adhesive material. A time of the first heat treatment is less than a time of the second heat treatment. After the first adhesive material is cured by the first heat treatment, the first adhesive material is further cured by the second heat treatment.

公开(公告)号：US20180068964A1

公开(公告)日：2018-03-08

申请号：US15798741

申请日：2017-10-31

Applicant: Renesas Electronics Corporation

Inventor： Takehiko MAEDA ,  Akira Yajima ,  Satoshi Itou ,  Fumiyoshi Kawashiro

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/06 ,  H01L24/08 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05553 ,  H01L2224/05582 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/05684 ,  H01L2224/2919 ,  H01L2224/32014 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48505 ,  H01L2224/48799 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/01008 ,  H01L2924/01074 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device includes providing a semiconductor substrate, forming, over a main surface the semiconductor substrate, a first insulating film, forming, over the first insulating film, an Al-containing conductive film containing aluminum as a main component, patterning the Al-containing conductive film to form a pad, forming, over the first insulating film, a second insulating film to cover the pad therewith, forming an opening in the second insulating film, and electrically coupling a copper wire to the pad exposed from the opening.