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1.发明授权Method and apparatus for fault detection classification of multiple tools based upon external data 有权基于外部数据的多种工具的故障检测分类方法和装置公开(公告)号：US07321993B1
公开(公告)日：2008-01-22
申请号：US10883364
申请日：2004-07-01
IPC分类号： G06F11/00
CPC分类号： G05B23/0235 , G05B2223/02
摘要： The present invention is generally directed to various methods and systems for fault detection control of multiple tools based upon external data. In one illustrative embodiment, the method includes monitoring each of a plurality of tools to determine if a fault condition occurs in any of the tools, each of the tools being comprised of at least one integrated metrology device, monitoring external data regarding at least one parameter that may impact an operation performed in each of the tools, and determining if an indicated fault condition in at least one of the tools is a valid fault condition or a systemic fault condition associated with a change in a value of the at least one parameter.
摘要翻译： 本发明一般涉及用于基于外部数据的多个工具的故障检测控制的各种方法和系统。 在一个说明性实施例中，该方法包括监视多个工具中的每个工具以确定是否在任何工具中发生故障状况，每个工具由至少一个集成测量装置组成，监视关于至少一个参数的外部数据 这可能影响在每个工具中执行的操作，并且确定至少一个工具中的指示的故障状况是否是与所述至少一个参数的值的变化相关联的有效故障状况或系统故障状况。
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公开(公告)号：US07031793B1
公开(公告)日：2006-04-18
申请号：US10286305
申请日：2002-11-01
CPC分类号： G05B19/042
摘要： A method and an apparatus are provided for conflict resolution among a plurality of controllers. The method includes receiving a first control instruction from a first process controller to process a workpiece, receiving a second control instruction from a second process controller to process the workpiece and adjusting at least one of the first control instruction and the second control instruction to process the workpiece to achieve a desired process goal.
摘要翻译： 为多个控制器之间的冲突解决提供了一种方法和装置。 该方法包括从第一过程控制器接收第一控制指令以处理工件，从第二过程控制器接收第二控制指令以处理工件并调整第一控制指令和第二控制指令中的至少一个以处理 工件达到所期望的工艺目标。
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公开(公告)号：US06960774B2
公开(公告)日：2005-11-01
申请号：US10700175
申请日：2003-11-03
申请人： Elfido Coss, Jr. , Patrick M. Cowan , Richard J. Markle , Tom Tse
发明人： Elfido Coss, Jr. , Patrick M. Cowan , Richard J. Markle , Tom Tse
IPC分类号： H01J37/302 , H01J37/304 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/3023 , H01J37/304
摘要： The present invention is generally directed to fault detection and control methodologies for ion implant processes, and a system for performing same. In one illustrative embodiment, the method comprises performing a tuning process for an ion implant tool, the tuning process resulting in at least one tool parameter for the ion implant tool, selecting or creating a fault detection model for an ion implant process to be performed in the ion implant tool based upon the tool parameter resulting from the tuning process, and monitoring an ion implant process performed in the ion implant tool using the selected or created fault detection model. In another illustrative embodiment, the method comprises performing a tuning process for an ion implant tool, the tuning process resulting in at least one tool parameter for the ion implant tool, and determining if the tool parameter resulting from the tuning process is acceptable based on historical metrology data for implant regions formed in at least one substrate subjected to an ion implant process performed in the ion implant tool.
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公开(公告)号：US06594589B1
公开(公告)日：2003-07-15
申请号：US09863822
申请日：2001-05-23
IPC分类号： G01B344
CPC分类号： G05B19/4184 , G05B2219/31357 , G05B2219/45031 , Y02P80/15 , Y02P90/14
摘要： A method for monitoring health of a tool includes receiving at least one tool parameter related to the processing of a workpiece in a tool; receiving a model selection trigger; selecting a tool health model based on the model selection trigger; generating at least one predicted tool parameter based on the selected tool health model; and generating a tool health rating for the tool based on a comparison between the measured tool parameter and the predicted tool parameter. A tool health monitor includes a library of tool health models, a model selector, and a fault detection and classification unit. The model selector is adapted to receive a model selection trigger and select a tool health model based on the model selection trigger. The fault detection and classification unit is adapted to receive at least one tool parameter related to the processing of a workpiece in a tool, generate at least one predicted tool parameter based on the selected tool health model, and generate a tool health rating for the tool based on a comparison between the received tool parameter and the predicted tool parameter.
摘要翻译： 用于监测工具健康的方法包括：接收与工具中的工件的处理有关的至少一个工具参数; 接收模型选择触发; 基于模型选择触发选择工具健康模型; 基于所选择的工具健康模型生成至少一个预测的工具参数; 并且基于所测量的工具参数和所预测的工具参数之间的比较，为所述工具生成工具健康评级。 工具健康监测器包括工具健康模型库，模型选择器和故障检测和分类单元。 模型选择器适于接收模型选择触发，并根据模型选择触发选择工具健康模型。 所述故障检测和分类单元适于接收与工具中的工件的处理有关的至少一个刀具参数，基于所选择的刀具健康模型生成至少一个预测刀具参数，并为所述刀具生成刀具健康等级 基于所接收的刀具参数与预测刀具参数之间的比较。
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公开(公告)号：US07774670B2
公开(公告)日：2010-08-10
申请号：US11853304
申请日：2007-09-11
CPC分类号： G01R31/31707 , G01R31/31721
摘要： A method includes retrieving a group test parameter determined based on test results associated with a plurality of integrated circuit devices. A particular integrated circuit device is tested using a test program and the group test parameter.
摘要翻译： 一种方法包括检索基于与多个集成电路装置相关联的测试结果确定的组测试参数。 使用测试程序和组测试参数测试特定的集成电路设备。
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6.发明授权Automated integrated circuit device manufacturing facility using central control 有权使用中央控制的自动化集成电路器件制造设备公开(公告)号：US07257458B1
公开(公告)日：2007-08-14
申请号：US11313196
申请日：2005-12-20
申请人： Richard J. Markle
发明人： Richard J. Markle
IPC分类号： G06F19/00
CPC分类号： G05B19/41865 , G05B2219/32051 , G05B2219/32266 , G05B2219/45031 , Y02P90/20
摘要： The present invention provides a method, an apparatus, and an automated semiconductor fabrication facility for determining control information based on global goals of a semiconductor manufacturing facility. The method includes accessing information indicative of at least one global goal of a semiconductor manufacturing facility, determining control information based on the at least one global goal, and providing a portion of the control information to each of a plurality of control units. Each of the plurality of control units is configured to control a corresponding manufacturing activity based on the provided portion of the control information.
摘要翻译： 本发明提供一种用于基于半导体制造设备的全局目标来确定控制信息的方法，装置和自动化半导体制造设备。 该方法包括访问指示半导体制造设施的至少一个全局目标的信息，基于至少一个全局目标确定控制信息，以及将控制信息的一部分提供给多个控制单元中的每一个。 多个控制单元中的每一个被配置为基于所提供的控制信息的部分来控制对应的制造活动。
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7.发明授权Methods of controlling wet chemical processes in forming metal silicide regions, and system for performing same 失效在形成金属硅化物区域中控制湿化学工艺的方法以及用于执行其的系统公开(公告)号：US06790683B1
公开(公告)日：2004-09-14
申请号：US10303224
申请日：2002-11-25
IPC分类号： H01L2100
CPC分类号： H01L21/67253 , G01N21/47 , H01L21/67086 , H01L22/20
摘要： The present invention is generally directed to various methods of controlling wet chemical processes in forming metal silicide regions, and a system for performing same. In one illustrative embodiment, the method comprises providing a substrate having a layer of unreacted refractory metal and at least one metal silicide region formed thereabove, performing a wet chemical process to remove at least a portion of the layer of unreacted refractory metal, measuring at least one characteristic of the portion of the layer of unreacted refractory metal while the wet chemical process is being performed, and controlling at least one parameter of the wet chemical process based upon the measured at least one characteristic of the portion of the layer of unreacted refractory metal. In another illustrative embodiment, the method comprises providing a substrate having a layer of unreacted refractory metal and at least one metal silicide region formed thereabove, performing a wet chemical process to remove at least a portion of the layer of unreacted refractory metal, measuring at least one characteristic of the portion of the layer of unreacted refractory metal after at least some of the wet chemical process has been performed, and controlling at least one parameter of the wet chemical process based upon the measured at least one characteristic of the portion of the layer of unreacted refractory metal.
摘要翻译： 本发明一般涉及在形成金属硅化物区域中控制湿化学工艺的各种方法，以及用于执行其的系统。 在一个说明性实施例中，该方法包括提供具有未反应的难熔金属层和形成于其上的至少一个金属硅化物区域的基底，执行湿化学工艺以去除至少一部分未反应的难熔金属层，至少测量 在进行湿化学处理时，未反应的难熔金属层的一部分的一个特征，并且基于所测量的未反应的难熔金属层的该部分的至少一个特征来控制湿化学工艺的至少一个参数 。 在另一说明性实施例中，该方法包括提供具有未反应的难熔金属层和形成在其上方的至少一个金属硅化物区域的基底，执行湿化学工艺以去除至少一部分未反应的难熔金属层，至少测量 在进行了至少一些湿化学处理之后，未反应的难熔金属层的该部分的一个特征是基于所测定的层的该部分的至少一个特性来控制湿化学工艺的至少一个参数 的未反应的难熔金属。
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8.发明授权Measurement system for detecting chemical species within a semiconductor processing device chamber 失效用于检测半导体处理装置室内的化学物质的测量系统
公开(公告)号：US5999886A
公开(公告)日：1999-12-07
申请号：US923492
申请日：1997-09-05
CPC分类号： G01N33/0062
摘要： A measurement system is presented for detecting the presence of one or more harmful chemical species within one or more chambers of a semiconductor wafer processing device. Chemical species of interest include oxygen (O.sub.2), nitrogen (N.sub.2), moisture (H.sub.2 O), and organic compounds associated with photoresist processing. Such organic compounds include isopropyl alcohol (CH.sub.3 CH(OH)CH.sub.3), acetone (CH.sub.3 COCH.sub.3), and ethyl-3-ethoxy propionate (C.sub.7 H.sub.14 O.sub.3). Candidate semiconductor wafer processing devices include evaporation, sputtering, and low pressure chemical vapor deposition (LPCVD) devices. The measurement system measures the concentrations of chemical species within each monitored chamber of the semiconductor wafer processing device: (i) during the processing of semiconductor wafers within the semiconductor wafer processing device, and (ii) during recovery periods following preventive maintenance or repair activities performed upon the semiconductor wafer processing device. Performing measurements during recovery periods aids in returning the semiconductor wafer processing device to service following preventive maintenance or repair activities. Data collection is not performed at other times (e.g., when the semiconductor wafer processing device is idle) in order to reduce data storage requirements. The measurement system includes one or more ambient sampling sensors coupled to a data collection computer through a control interface. Each ambient sampling sensor is in gaseous communication with ambients within the one or more monitored chambers. The control interface triggers data collection during the processing of one or more semiconductor wafers within the semiconductor wafer processing device, and following a maintenance activity performed upon the semiconductor wafer processing device.
摘要翻译： 提供了一种用于检测在半导体晶片处理装置的一个或多个室内存在一种或多种有害化学物质的测量系统。 感兴趣的化学物质包括氧（O 2），氮（N 2），水分（H 2 O）和与光致抗蚀剂加工相关的有机化合物。 这些有机化合物包括异丙醇（CH 3 CH（OH）CH 3），丙酮（CH 3 COCH 3）和乙基-3-乙氧基丙酸酯（C 7 H 14 O 3）。 候选半导体晶片处理装置包括蒸发，溅射和低压化学气相沉积（LPCVD）装置。 测量系统测量半导体晶片处理装置的每个监测室内的化学物质的浓度：（i）在半导体晶片处理装置内的半导体晶片的处理期间，以及（ii）在执行预防性维护或修复活动之后的恢复期间 在半导体晶片处理装置上。 在恢复期间执行测量有助于将半导体晶片处理装置返回到维修之后进行预防性维护或维修活动。 在其他时间（例如当半导体晶片处理装置空闲时）不进行数据收集，以便减少数据存储要求。 测量系统包括通过控制接口耦合到数据采集计算机的一个或多个环境采样传感器。 每个环境采样传感器与一个或多个监测室内的环境气态连通。 控制接口在半导体晶片处理装置内的一个或多个半导体晶片的处理期间触发数据收集，并且跟随在半导体晶片处理装置上执行的维护活动。
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公开(公告)号：US5686996A
公开(公告)日：1997-11-11
申请号：US450693
申请日：1995-05-25
申请人： James K. Fidler , Richard J. Markle
发明人： James K. Fidler , Richard J. Markle
CPC分类号： G01J1/4257 , G01B11/272
摘要： A device is provided for aligning a laser. For example, such a device could be used to align a laser as part of a particle measurement device in a semiconductor process tool. The device consists of a rigid member with alignment marks which define the intended point of impingement of a beam emitted from the laser. The laser is moved to allow the emitted laser beam to extend upon the alignment device and impinge upon the alignment marks. When the laser beam impinges upon alignment marks, preferably formed near the center of the alignment device, the laser is determined to be in proper alignment. The device is configured having a outer circumference equal to the terminating element which the device replaces during the alignment procedure. The device is then removed from the semiconductor process tool and the terminating element, either a beam stop or a photodiode detector, is re-inserted. A procedure utilizing relatively few steps for properly aligning the laser is thereby provided.
摘要翻译： 提供了用于对准激光器的装置。 例如，这种装置可以用于将激光器作为半导体工艺工具中的粒子测量装置的一部分进行对准。 该装置由具有对准标记的刚性构件组成，其限定从激光器发射的光束的冲击的预期点。 激光被移动以允许发射的激光束在对准装置上延伸并撞击对准标记。 当激光束撞击对准标记时，优选地在对准装置的中心附近形成，激光被确定为正确对准。 该装置被配置为具有等于在对准过程期间设备替代的终止元件的外圆周。 然后将器件从半导体工艺工具中取出，并重新插入端接元件，光束停止或光电二极管检测器。 从而提供了使用相对较少的步骤以适当对准激光的步骤。
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10.发明授权Method and apparatus for dynamic adjustment of a sampling plan based on wafer electrical test data 有权基于晶片电气测试数据的采样方案的动态调整方法和装置公开(公告)号：US07445945B1
公开(公告)日：2008-11-04
申请号：US11194843
申请日：2005-08-01
CPC分类号： H01L22/14 , H01L21/67253 , H01L21/67276 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a method and apparatus for dynamic adjustment of a sampling plan. The method includes accessing wafer electrical test data associated with at least one workpiece that has been processed by at least one processing tool. The method also includes determining, based on the wafer electrical test data, at least one sampling plan for at least one measurement device configured to measure at least one parameter associated with workpieces processed by the at least one processing tool.
摘要翻译： 本发明提供一种用于采样计划的动态调整的方法和装置。 该方法包括访问与由至少一个处理工具处理的至少一个工件相关联的晶片电测试数据。 该方法还包括基于晶片电测试数据确定至少一个测量装置的至少一个采样计划，该至少一个测量装置被配置成测量与由至少一个处理工具处理的工件相关联的至少一个参数。
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