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    Total tool control for semiconductor manufacturing
    1.
    发明授权
    Total tool control for semiconductor manufacturing 有权
    半导体制造的刀具总控制

    公开(公告)号：US07292959B1

    公开(公告)日：2007-11-06

    申请号：US11342759

    申请日：2006-01-30

    申请人： Richard J. Markle ,  Thomas J. Sonderman

    发明人： Richard J. Markle ,  Thomas J. Sonderman

    IPC分类号： G06F19/00

    CPC分类号： G05B19/41875 ,  G05B2219/42001 ,  G05B2219/45031 ,  Y02P90/22

    摘要： The present invention provides a method and apparatus for controlling processing tools and related control units. The method includes accessing information indicative of at least one excursion of at least one processing tool detected by a first control unit associated with the at least one processing tool. The method also includes determining at least one action to be taken by at least one second control unit associated with the at least one processing tool based on the information indicative of said at least one excursion.

    摘要翻译： 本发明提供一种用于控制加工工具和相关控制单元的方法和装置。 该方法包括访问指示由与至少一个处理工具相关联的第一控制单元检测到的至少一个处理工具的至少一个偏移的信息。 该方法还包括基于指示所述至少一个偏移的信息来确定由与至少一个处理工具相关联的至少一个第二控制单元采取的至少一个动作。

    Secondary process controller for supplementing a primary process controller
    2.
    发明授权
    Secondary process controller for supplementing a primary process controller 有权
    辅助过程控制器，用于补充主过程控制器

    公开(公告)号：US07254453B2

    公开(公告)日：2007-08-07

    申请号：US10301051

    申请日：2002-11-21

    申请人： Richard J. Markle ,  Thomas J. Sonderman

    发明人： Richard J. Markle ,  Thomas J. Sonderman

    IPC分类号： G05B13/02 ,  G06F19/00

    CPC分类号： G05B19/41865 ,  G05B2219/33104 ,  G05B2219/45031 ,  Y02P90/14 ,  Y02P90/20

    摘要： A method and an apparatus for implementing a multi-variate process control system. A workpiece is processed using a primary process control function during a first time period. A secondary process control function is performed during at least a portion of the first time period for processing of the workpiece. The secondary process control function is capable of modifying at least one secondary control parameter.

    摘要翻译： 一种用于实现多变量过程控制系统的方法和装置。 在第一时间段期间使用主过程控制功能处理工件。 在用于处理工件的第一时间段的至少一部分期间执行二次过程控制功能。 辅助过程控制功能能够修改至少一个辅助控制参数。

    Plasma state monitoring to control etching processes and across-wafer uniformity, and system for performing same
    3.
    发明授权
    Plasma state monitoring to control etching processes and across-wafer uniformity, and system for performing same 有权
    用于控制蚀刻工艺和跨晶片均匀性的等离子体状态监测以及执行相同的系统

    公开(公告)号：US07402257B1

    公开(公告)日：2008-07-22

    申请号：US10209585

    申请日：2002-07-30

    申请人： Thomas J. Sonderman ,  Richard J. Markle

    发明人： Thomas J. Sonderman ,  Richard J. Markle

    IPC分类号： G01R31/00

    CPC分类号： H01L22/20

    摘要： The present invention is generally directed to plasma state monitoring to control etching processes and across-wafer uniformity, and a system for performing same. In one illustrative embodiment, the method comprises generating a plasma within an etching tool, monitoring at least one characteristic of the generated plasma, and controlling at least one parameter of a plasma etching process performed in the tool based upon the monitored at least one characteristic of the plasma. In another illustrative embodiment, the method comprises generating a plasma within an etch tool, performing a plasma etching process within the etch tool, determining at least one characteristic of the plasma, and controlling at least one parameter of the etching process based upon a comparison of the determined at least one characteristic of the plasma and a target value for the determined at least one characteristic of the plasma.

    摘要翻译： 本发明一般涉及用于控制蚀刻工艺和跨晶片均匀性的等离子体状态监测，以及用于执行其的系统。 在一个说明性实施例中，该方法包括在蚀刻工具内产生等离子体，监测产生的等离子体的至少一个特征，以及基于所监测的至少一个特征来控制在工具中执行的等离子体蚀刻工艺的至少一个参数 等离子体。 在另一示例性实施例中，该方法包括在蚀刻工具内产生等离子体，在蚀刻工具内执行等离子体蚀刻工艺，确定等离子体的至少一种特性，以及基于比较来控制蚀刻工艺的至少一个参数 所确定的等离子体的至少一个特性和所确定的等离子体的至少一个特性的目标值。

    Automated integrated circuit device manufacturing facility using central control
    6.
    发明授权
    Automated integrated circuit device manufacturing facility using central control 有权
    使用中央控制的自动化集成电路器件制造设备

    公开(公告)号：US07257458B1

    公开(公告)日：2007-08-14

    申请号：US11313196

    申请日：2005-12-20

    申请人： Richard J. Markle

    发明人： Richard J. Markle

    IPC分类号： G06F19/00

    CPC分类号： G05B19/41865 ,  G05B2219/32051 ,  G05B2219/32266 ,  G05B2219/45031 ,  Y02P90/20

    摘要： The present invention provides a method, an apparatus, and an automated semiconductor fabrication facility for determining control information based on global goals of a semiconductor manufacturing facility. The method includes accessing information indicative of at least one global goal of a semiconductor manufacturing facility, determining control information based on the at least one global goal, and providing a portion of the control information to each of a plurality of control units. Each of the plurality of control units is configured to control a corresponding manufacturing activity based on the provided portion of the control information.

    摘要翻译： 本发明提供一种用于基于半导体制造设备的全局目标来确定控制信息的方法，装置和自动化半导体制造设备。 该方法包括访问指示半导体制造设施的至少一个全局目标的信息，基于至少一个全局目标确定控制信息，以及将控制信息的一部分提供给多个控制单元中的每一个。 多个控制单元中的每一个被配置为基于所提供的控制信息的部分来控制对应的制造活动。

    Methods of controlling wet chemical processes in forming metal silicide regions, and system for performing same
    7.
    发明授权
    Methods of controlling wet chemical processes in forming metal silicide regions, and system for performing same 失效
    在形成金属硅化物区域中控制湿化学工艺的方法以及用于执行其的系统

    公开(公告)号：US06790683B1

    公开(公告)日：2004-09-14

    申请号：US10303224

    申请日：2002-11-25

    申请人： Richard J. Markle ,  Terri A. Couteau

    发明人： Richard J. Markle ,  Terri A. Couteau

    IPC分类号： H01L2100

    CPC分类号： H01L21/67253 ,  G01N21/47 ,  H01L21/67086 ,  H01L22/20

    摘要： The present invention is generally directed to various methods of controlling wet chemical processes in forming metal silicide regions, and a system for performing same. In one illustrative embodiment, the method comprises providing a substrate having a layer of unreacted refractory metal and at least one metal silicide region formed thereabove, performing a wet chemical process to remove at least a portion of the layer of unreacted refractory metal, measuring at least one characteristic of the portion of the layer of unreacted refractory metal while the wet chemical process is being performed, and controlling at least one parameter of the wet chemical process based upon the measured at least one characteristic of the portion of the layer of unreacted refractory metal. In another illustrative embodiment, the method comprises providing a substrate having a layer of unreacted refractory metal and at least one metal silicide region formed thereabove, performing a wet chemical process to remove at least a portion of the layer of unreacted refractory metal, measuring at least one characteristic of the portion of the layer of unreacted refractory metal after at least some of the wet chemical process has been performed, and controlling at least one parameter of the wet chemical process based upon the measured at least one characteristic of the portion of the layer of unreacted refractory metal.

    摘要翻译： 本发明一般涉及在形成金属硅化物区域中控制湿化学工艺的各种方法，以及用于执行其的系统。 在一个说明性实施例中，该方法包括提供具有未反应的难熔金属层和形成于其上的至少一个金属硅化物区域的基底，执行湿化学工艺以去除至少一部分未反应的难熔金属层，至少测量 在进行湿化学处理时，未反应的难熔金属层的一部分的一个特征，并且基于所测量的未反应的难熔金属层的该部分的至少一个特征来控制湿化学工艺的至少一个参数 。 在另一说明性实施例中，该方法包括提供具有未反应的难熔金属层和形成在其上方的至少一个金属硅化物区域的基底，执行湿化学工艺以去除至少一部分未反应的难熔金属层，至少测量 在进行了至少一些湿化学处理之后，未反应的难熔金属层的该部分的一个特征是基于所测定的层的该部分的至少一个特性来控制湿化学工艺的至少一个参数 的未反应的难熔金属。

    Measurement system for detecting chemical species within a semiconductor processing device chamber
    8.
    发明授权
    Measurement system for detecting chemical species within a semiconductor processing device chamber 失效
    用于检测半导体处理装置室内的化学物质的测量系统

    公开(公告)号：US5999886A

    公开(公告)日：1999-12-07

    申请号：US923492

    申请日：1997-09-05

    申请人： Michel A. Martin ,  Richard J. Markle ,  James K. Fidler

    发明人： Michel A. Martin ,  Richard J. Markle ,  James K. Fidler

    IPC分类号： G01N33/00 ,  G01N27/00

    CPC分类号： G01N33/0062

    摘要： A measurement system is presented for detecting the presence of one or more harmful chemical species within one or more chambers of a semiconductor wafer processing device. Chemical species of interest include oxygen (O.sub.2), nitrogen (N.sub.2), moisture (H.sub.2 O), and organic compounds associated with photoresist processing. Such organic compounds include isopropyl alcohol (CH.sub.3 CH(OH)CH.sub.3), acetone (CH.sub.3 COCH.sub.3), and ethyl-3-ethoxy propionate (C.sub.7 H.sub.14 O.sub.3). Candidate semiconductor wafer processing devices include evaporation, sputtering, and low pressure chemical vapor deposition (LPCVD) devices. The measurement system measures the concentrations of chemical species within each monitored chamber of the semiconductor wafer processing device: (i) during the processing of semiconductor wafers within the semiconductor wafer processing device, and (ii) during recovery periods following preventive maintenance or repair activities performed upon the semiconductor wafer processing device. Performing measurements during recovery periods aids in returning the semiconductor wafer processing device to service following preventive maintenance or repair activities. Data collection is not performed at other times (e.g., when the semiconductor wafer processing device is idle) in order to reduce data storage requirements. The measurement system includes one or more ambient sampling sensors coupled to a data collection computer through a control interface. Each ambient sampling sensor is in gaseous communication with ambients within the one or more monitored chambers. The control interface triggers data collection during the processing of one or more semiconductor wafers within the semiconductor wafer processing device, and following a maintenance activity performed upon the semiconductor wafer processing device.

    摘要翻译： 提供了一种用于检测在半导体晶片处理装置的一个或多个室内存在一种或多种有害化学物质的测量系统。 感兴趣的化学物质包括氧（O 2），氮（N 2），水分（H 2 O）和与光致抗蚀剂加工相关的有机化合物。 这些有机化合物包括异丙醇（CH 3 CH（OH）CH 3），丙酮（CH 3 COCH 3）和乙基-3-乙氧基丙酸酯（C 7 H 14 O 3）。 候选半导体晶片处理装置包括蒸发，溅射和低压化学气相沉积（LPCVD）装置。 测量系统测量半导体晶片处理装置的每个监测室内的化学物质的浓度：（i）在半导体晶片处理装置内的半导体晶片的处理期间，以及（ii）在执行预防性维护或修复活动之后的恢复期间 在半导体晶片处理装置上。 在恢复期间执行测量有助于将半导体晶片处理装置返回到维修之后进行预防性维护或维修活动。 在其他时间（例如当半导体晶片处理装置空闲时）不进行数据收集，以便减少数据存储要求。 测量系统包括通过控制接口耦合到数据采集计算机的一个或多个环境采样传感器。 每个环境采样传感器与一个或多个监测室内的环境气态连通。 控制接口在半导体晶片处理装置内的一个或多个半导体晶片的处理期间触发数据收集，并且跟随在半导体晶片处理装置上执行的维护活动。

    Device and method for aligning a laser
    9.
    发明授权
    Device and method for aligning a laser 失效
    激光对准的装置和方法

    公开(公告)号：US5686996A

    公开(公告)日：1997-11-11

    申请号：US450693

    申请日：1995-05-25

    申请人： James K. Fidler ,  Richard J. Markle

    发明人： James K. Fidler ,  Richard J. Markle

    IPC分类号： G01B11/27 ,  G01J1/42 ,  G01B11/00 ,  G01J1/40 ,  G01N21/01

    CPC分类号： G01J1/4257 ,  G01B11/272

    摘要： A device is provided for aligning a laser. For example, such a device could be used to align a laser as part of a particle measurement device in a semiconductor process tool. The device consists of a rigid member with alignment marks which define the intended point of impingement of a beam emitted from the laser. The laser is moved to allow the emitted laser beam to extend upon the alignment device and impinge upon the alignment marks. When the laser beam impinges upon alignment marks, preferably formed near the center of the alignment device, the laser is determined to be in proper alignment. The device is configured having a outer circumference equal to the terminating element which the device replaces during the alignment procedure. The device is then removed from the semiconductor process tool and the terminating element, either a beam stop or a photodiode detector, is re-inserted. A procedure utilizing relatively few steps for properly aligning the laser is thereby provided.

    摘要翻译： 提供了用于对准激光器的装置。 例如，这种装置可以用于将激光器作为半导体工艺工具中的粒子测量装置的一部分进行对准。 该装置由具有对准标记的刚性构件组成，其限定从激光器发射的光束的冲击的预期点。 激光被移动以允许发射的激光束在对准装置上延伸并撞击对准标记。 当激光束撞击对准标记时，优选地在对准装置的中心附近形成，激光被确定为正确对准。 该装置被配置为具有等于在对准过程期间设备替代的终止元件的外圆周。 然后将器件从半导体工艺工具中取出，并重新插入端接元件，光束停止或光电二极管检测器。 从而提供了使用相对较少的步骤以适当对准激光的步骤。

    Method and apparatus for dynamic adjustment of a sampling plan based on wafer electrical test data
    10.
    发明授权
    Method and apparatus for dynamic adjustment of a sampling plan based on wafer electrical test data 有权
    基于晶片电气测试数据的采样方案的动态调整方法和装置

    公开(公告)号：US07445945B1

    公开(公告)日：2008-11-04

    申请号：US11194843

    申请日：2005-08-01

    申请人： Richard J. Markle ,  Christopher A. Bode

    发明人： Richard J. Markle ,  Christopher A. Bode

    IPC分类号： H01L21/66 ,  H01L21/00

    CPC分类号： H01L22/14 ,  H01L21/67253 ,  H01L21/67276 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention provides a method and apparatus for dynamic adjustment of a sampling plan. The method includes accessing wafer electrical test data associated with at least one workpiece that has been processed by at least one processing tool. The method also includes determining, based on the wafer electrical test data, at least one sampling plan for at least one measurement device configured to measure at least one parameter associated with workpieces processed by the at least one processing tool.

    摘要翻译： 本发明提供一种用于采样计划的动态调整的方法和装置。 该方法包括访问与由至少一个处理工具处理的至少一个工件相关联的晶片电测试数据。 该方法还包括基于晶片电测试数据确定至少一个测量装置的至少一个采样计划，该至少一个测量装置被配置成测量与由至少一个处理工具处理的工件相关联的至少一个参数。